{"_buckets": {"deposit": "555f94bc-0c95-418c-8c13-df32b2b6b17c"}, "_deposit": {"id": "27055", "owners": [], "pid": {"revision_id": 0, "type": "depid", "value": "27055"}, "status": "published"}, "_oai": {"id": "oai:nagoya.repo.nii.ac.jp:00027055", "sets": ["675"]}, "author_link": ["88627", "88628", "88629", "88630", "88631", "88632"], "item_10_biblio_info_6": {"attribute_name": "書誌情報", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2018-11-01", "bibliographicIssueDateType": "Issued"}, "bibliographicIssueNumber": "43", "bibliographicPageEnd": "24671", "bibliographicPageStart": "24665", "bibliographicVolumeNumber": "122", "bibliographic_titles": [{"bibliographic_title": "The Journal of Physical Chemistry C", "bibliographic_titleLang": "en"}]}]}, "item_10_description_4": {"attribute_name": "抄録", "attribute_value_mlt": [{"subitem_description": "We report density functional calculations that clarify atom-scale mechanisms of vapor-phase epitaxial growth of GaN with gas sources of trimethylgallium and ammonia. We identify various stable adsorption structures of a Ga atom and NHx molecules (x = 0–3) on GaN(0001) surfaces and find that NH2 and NH units spontaneously intervene in Ga–Ga surface bonds on Ga-rich GaN(0001) surface. We then explore the reaction in which NH3 on the surface is decomposed and becomes an N-incorporated structure, −Ga–(NH)–Ga–, on the Ga-rich GaN(0001) and find that the reaction occurs with the energy barrier of 0.63 eV. Further exploration reveals that a reaction of H2 desorption occurs with the energy barrier of 2 eV, leaving the N atom incorporated in the Ga–N network. This barrier can be overcome when we consider the chemical potential of an H2 molecule in the gas phase at the growth temperature. This N incorporation on GaN is a new growth mechanism catalyzed by the growing surface.", "subitem_description_language": "en", "subitem_description_type": "Abstract"}]}, "item_10_description_5": {"attribute_name": "内容記述", "attribute_value_mlt": [{"subitem_description": "ファイル公開：2019-11-01", "subitem_description_language": "ja", "subitem_description_type": "Other"}]}, "item_10_publisher_32": {"attribute_name": "出版者", "attribute_value_mlt": [{"subitem_publisher": "ACS Publications", "subitem_publisher_language": "en"}]}, "item_10_relation_11": {"attribute_name": "DOI", "attribute_value_mlt": [{"subitem_relation_type": "isVersionOf", "subitem_relation_type_id": {"subitem_relation_type_id_text": "https://doi.org/10.1021/acs.jpcc.8b05682", "subitem_relation_type_select": "DOI"}}]}, "item_10_rights_12": {"attribute_name": "権利", "attribute_value_mlt": [{"subitem_rights": "“This document is the Accepted Manuscript version of a Published Work that appeared in final form in [The Journal of Physical Chemistry C], copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see [https://pubs.acs.org/articlesonrequest/AOR-maiBc6cYXferN5fuuvSI].”", "subitem_rights_language": "en"}]}, "item_10_select_15": {"attribute_name": "著者版フラグ", "attribute_value_mlt": [{"subitem_select_item": "author"}]}, "item_10_source_id_61": {"attribute_name": "ISSN（print）", "attribute_value_mlt": [{"subitem_source_identifier": "1932-7447", "subitem_source_identifier_type": "PISSN"}]}, "item_10_source_id_62": {"attribute_name": "ISSN（Online）", "attribute_value_mlt": [{"subitem_source_identifier": "1932-7455", "subitem_source_identifier_type": "EISSN"}]}, "item_1615787544753": {"attribute_name": "出版タイプ", "attribute_value_mlt": [{"subitem_version_resource": "http://purl.org/coar/version/c_ab4af688f83e57aa", "subitem_version_type": "AM"}]}, "item_access_right": {"attribute_name": "アクセス権", "attribute_value_mlt": [{"subitem_access_right": "open access", "subitem_access_right_uri": "http://purl.org/coar/access_right/c_abf2"}]}, "item_creator": {"attribute_name": "著者", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "Bui, Kieu My", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "88627", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Iwata, Jun-Ichi", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "88628", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Kangawa, Yoshihiro", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "88629", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Shiraishi, Kenji", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "88630", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Shigeta, Yasuteru", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "88631", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Oshiyama, Atsushi", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "88632", "nameIdentifierScheme": "WEKO"}]}]}, "item_files": {"attribute_name": "ファイル情報", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2019-11-01"}], "displaytype": "detail", "download_preview_message": "", "file_order": 0, "filename": "v1004.pdf", "filesize": [{"value": "4.3 MB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "licensetype": "license_note", "mimetype": "application/pdf", "size": 4300000.0, "url": {"label": "v1004", "objectType": "fulltext", "url": "https://nagoya.repo.nii.ac.jp/record/27055/files/v1004.pdf"}, "version_id": "9829d58a-43c0-45b1-b73f-3e4653cd4f6a"}]}, "item_language": {"attribute_name": "言語", "attribute_value_mlt": [{"subitem_language": "eng"}]}, "item_resource_type": {"attribute_name": "資源タイプ", "attribute_value_mlt": [{"resourcetype": "journal article", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "Reaction Pathway of Surface-Catalyzed Ammonia Decomposition and Nitrogen Incorporation in Epitaxial Growth of Gallium Nitride", "item_titles": {"attribute_name": "タイトル", "attribute_value_mlt": [{"subitem_title": "Reaction Pathway of Surface-Catalyzed Ammonia Decomposition and Nitrogen Incorporation in Epitaxial Growth of Gallium Nitride", "subitem_title_language": "en"}]}, "item_type_id": "10", "owner": "1", "path": ["675"], "permalink_uri": "http://hdl.handle.net/2237/00029255", "pubdate": {"attribute_name": "PubDate", "attribute_value": "2019-02-07"}, "publish_date": "2019-02-07", "publish_status": "0", "recid": "27055", "relation": {}, "relation_version_is_last": true, "title": ["Reaction Pathway of Surface-Catalyzed Ammonia Decomposition and Nitrogen Incorporation in Epitaxial Growth of Gallium Nitride"], "weko_shared_id": -1}