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  1. F200 未来材料・システム研究所
  2. F200a 雑誌掲載論文
  3. 学術雑誌

Reaction Pathway of Surface-Catalyzed Ammonia Decomposition and Nitrogen Incorporation in Epitaxial Growth of Gallium Nitride

http://hdl.handle.net/2237/00029255
http://hdl.handle.net/2237/00029255
27f06312-e52c-42f2-b90b-06c3f6e75622
名前 / ファイル ライセンス アクション
v1004.pdf v1004 (4.3 MB)
Item type 学術雑誌論文 / Journal Article(1)
公開日 2019-02-07
タイトル
タイトル Reaction Pathway of Surface-Catalyzed Ammonia Decomposition and Nitrogen Incorporation in Epitaxial Growth of Gallium Nitride
言語 en
著者 Bui, Kieu My

× Bui, Kieu My

WEKO 88627

en Bui, Kieu My

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Iwata, Jun-Ichi

× Iwata, Jun-Ichi

WEKO 88628

en Iwata, Jun-Ichi

Search repository
Kangawa, Yoshihiro

× Kangawa, Yoshihiro

WEKO 88629

en Kangawa, Yoshihiro

Search repository
Shiraishi, Kenji

× Shiraishi, Kenji

WEKO 88630

en Shiraishi, Kenji

Search repository
Shigeta, Yasuteru

× Shigeta, Yasuteru

WEKO 88631

en Shigeta, Yasuteru

Search repository
Oshiyama, Atsushi

× Oshiyama, Atsushi

WEKO 88632

en Oshiyama, Atsushi

Search repository
アクセス権
アクセス権 open access
アクセス権URI http://purl.org/coar/access_right/c_abf2
権利
言語 en
権利情報 “This document is the Accepted Manuscript version of a Published Work that appeared in final form in [The Journal of Physical Chemistry C], copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see [https://pubs.acs.org/articlesonrequest/AOR-maiBc6cYXferN5fuuvSI].”
抄録
内容記述 We report density functional calculations that clarify atom-scale mechanisms of vapor-phase epitaxial growth of GaN with gas sources of trimethylgallium and ammonia. We identify various stable adsorption structures of a Ga atom and NHx molecules (x = 0–3) on GaN(0001) surfaces and find that NH2 and NH units spontaneously intervene in Ga–Ga surface bonds on Ga-rich GaN(0001) surface. We then explore the reaction in which NH3 on the surface is decomposed and becomes an N-incorporated structure, −Ga–(NH)–Ga–, on the Ga-rich GaN(0001) and find that the reaction occurs with the energy barrier of 0.63 eV. Further exploration reveals that a reaction of H2 desorption occurs with the energy barrier of 2 eV, leaving the N atom incorporated in the Ga–N network. This barrier can be overcome when we consider the chemical potential of an H2 molecule in the gas phase at the growth temperature. This N incorporation on GaN is a new growth mechanism catalyzed by the growing surface.
言語 en
内容記述タイプ Abstract
内容記述
内容記述 ファイル公開:2019-11-01
言語 ja
内容記述タイプ Other
出版者
言語 en
出版者 ACS Publications
言語
言語 eng
資源タイプ
資源タイプresource http://purl.org/coar/resource_type/c_6501
タイプ journal article
出版タイプ
出版タイプ AM
出版タイプResource http://purl.org/coar/version/c_ab4af688f83e57aa
DOI
関連タイプ isVersionOf
識別子タイプ DOI
関連識別子 https://doi.org/10.1021/acs.jpcc.8b05682
ISSN(print)
収録物識別子タイプ PISSN
収録物識別子 1932-7447
ISSN(Online)
収録物識別子タイプ EISSN
収録物識別子 1932-7455
書誌情報 en : The Journal of Physical Chemistry C

巻 122, 号 43, p. 24665-24671, 発行日 2018-11-01
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