{"_buckets": {"deposit": "01b6518f-9dc3-4970-8c50-c66c688d909b"}, "_deposit": {"id": "27773", "owners": [], "pid": {"revision_id": 0, "type": "depid", "value": "27773"}, "status": "published"}, "_oai": {"id": "oai:nagoya.repo.nii.ac.jp:00027773", "sets": ["607"]}, "author_link": ["90263"], "item_12_alternative_title_19": {"attribute_name": "その他のタイトル", "attribute_value_mlt": [{"subitem_alternative_title": "Theoretical study on the gate insulators for GaN MOSFET", "subitem_alternative_title_language": "en"}]}, "item_12_biblio_info_6": {"attribute_name": "書誌情報", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2019-03-25", "bibliographicIssueDateType": "Issued"}}]}, "item_12_date_granted_64": {"attribute_name": "学位授与年月日", "attribute_value_mlt": [{"subitem_dategranted": "2019-03-25"}]}, "item_12_degree_grantor_62": {"attribute_name": "学位授与機関", "attribute_value_mlt": [{"subitem_degreegrantor": [{"subitem_degreegrantor_language": "ja", "subitem_degreegrantor_name": "名古屋大学"}, {"subitem_degreegrantor_language": "en", "subitem_degreegrantor_name": "Nagoya University"}], "subitem_degreegrantor_identifier": [{"subitem_degreegrantor_identifier_name": "13901", "subitem_degreegrantor_identifier_scheme": "kakenhi"}]}]}, "item_12_degree_name_61": {"attribute_name": "学位名", "attribute_value_mlt": [{"subitem_degreename": "博士(工学)", "subitem_degreename_language": "ja"}]}, "item_12_dissertation_number_65": {"attribute_name": "学位授与番号", "attribute_value_mlt": [{"subitem_dissertationnumber": "甲第12797号"}]}, "item_12_select_15": {"attribute_name": "著者版フラグ", "attribute_value_mlt": [{"subitem_select_item": "none"}]}, "item_12_text_63": {"attribute_name": "学位授与年度", "attribute_value_mlt": [{"subitem_text_value": "2018"}]}, "item_access_right": {"attribute_name": "アクセス権", "attribute_value_mlt": [{"subitem_access_right": "metadata only access", "subitem_access_right_uri": "http://purl.org/coar/access_right/c_14cb"}]}, "item_creator": {"attribute_name": "著者", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "長川, 健太", "creatorNameLang": "ja"}], "nameIdentifiers": [{"nameIdentifier": "90263", "nameIdentifierScheme": "WEKO"}]}]}, "item_files": {"attribute_name": "ファイル情報", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2019-06-10"}], "displaytype": "detail", "download_preview_message": "", "file_order": 0, "filename": "k12797_abstract.pdf", "filesize": [{"value": "281.4 kB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "licensetype": "license_note", "mimetype": "application/pdf", "size": 281400.0, "url": {"label": "k12797_abstract", "objectType": "abstract", "url": "https://nagoya.repo.nii.ac.jp/record/27773/files/k12797_abstract.pdf"}, "version_id": "f0168ecc-e3ea-4d1d-a854-77b2b4c3298e"}, {"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2019-06-10"}], "displaytype": "detail", "download_preview_message": "", "file_order": 1, "filename": "k12797_review.pdf", "filesize": [{"value": "173.1 kB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "licensetype": "license_note", "mimetype": "application/pdf", "size": 173100.0, "url": {"label": "k12797_review", "objectType": "other", "url": "https://nagoya.repo.nii.ac.jp/record/27773/files/k12797_review.pdf"}, "version_id": "f4942961-15de-449d-81d8-f9a576c601ad"}, {"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2019-06-10"}], "displaytype": "detail", "download_preview_message": "", "file_order": 2, "filename": "k12797_summary.pdf", "filesize": [{"value": "247.5 kB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "licensetype": "license_note", "mimetype": "application/pdf", "size": 247500.0, "url": {"label": "k12797_summary", "objectType": "summary", "url": "https://nagoya.repo.nii.ac.jp/record/27773/files/k12797_summary.pdf"}, "version_id": "9fd227ef-e1df-40b3-b932-32ad39bac753"}]}, "item_language": {"attribute_name": "言語", "attribute_value_mlt": [{"subitem_language": "jpn"}]}, "item_resource_type": {"attribute_name": "資源タイプ", "attribute_value_mlt": [{"resourcetype": "doctoral thesis", "resourceuri": "http://purl.org/coar/resource_type/c_db06"}]}, "item_title": "GaN MOSFET用ゲート絶縁膜の理論的研究", "item_titles": {"attribute_name": "タイトル", "attribute_value_mlt": [{"subitem_title": "GaN MOSFET用ゲート絶縁膜の理論的研究", "subitem_title_language": "ja"}]}, "item_type_id": "12", "owner": "1", "path": ["607"], "permalink_uri": "http://hdl.handle.net/2237/00029972", "pubdate": {"attribute_name": "PubDate", "attribute_value": "2019-04-04"}, "publish_date": "2019-04-04", "publish_status": "0", "recid": "27773", "relation": {}, "relation_version_is_last": true, "title": ["GaN MOSFET用ゲート絶縁膜の理論的研究"], "weko_shared_id": -1}