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Ionic liquid thin layer-induced memory effects in organic field-effect transistors
http://hdl.handle.net/2237/00030980
http://hdl.handle.net/2237/00030980dd9dfac2-120d-49c2-bb8f-09aa43d09015
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
Awaga_PCCP.docx (1.6 MB)
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| Item type | 学術雑誌論文 / Journal Article(1) | |||||
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| 公開日 | 2019-12-17 | |||||
| タイトル | ||||||
| タイトル | Ionic liquid thin layer-induced memory effects in organic field-effect transistors | |||||
| 言語 | en | |||||
| 著者 |
Eguchi, Keitaro
× Eguchi, Keitaro× Matsushita, Michio M.× Awaga, Kunio |
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| アクセス権 | ||||||
| アクセス権 | open access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_abf2 | |||||
| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | We examined the morphologies and structures of pentacene and C60 thin films grown on thin layers of an ionic liquid, N,N-diethyl-N-methyl-N-(2-methoxyethyl)ammonium bis(trifluoromethanesulfonyl)imide (DEME-TFSI), and found that the characteristics of the films depended significantly on the thickness of DEME-TFSI. In addition, we fabricated organic field-effect transistors (OFETs) of pentacene and C60 in which a thin layer of DEME-TFSI was inserted between the organic semiconductor (pentacene or C60) and the gate insulating layer, and measured their performance in situ. We found that 1.5–2 ML (ML: monolayer) DEME-TFSI produced a large hysteresis loop in the transfer characteristics in these OFETs, but 5 ML DEME-TFSI resulted in the formation of normally-on states with far smaller memory effects. The curvatures of the hysteresis loops were caused by the formation of trap states induced by the DEME-TFSI layers. This novel technique provides a simple tool for creating hysteresis behavior and could potentially be applied to transistor memory devices. | |||||
| 言語 | en | |||||
| 内容記述 | ||||||
| 内容記述タイプ | Other | |||||
| 内容記述 | ファイル公開：2020/09/21 | |||||
| 言語 | ja | |||||
| 出版者 | ||||||
| 出版者 | Royal Society of Chemistry | |||||
| 言語 | en | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプresource | http://purl.org/coar/resource_type/c_6501 | |||||
| タイプ | journal article | |||||
| 出版タイプ | ||||||
| 出版タイプ | AM | |||||
| 出版タイプResource | http://purl.org/coar/version/c_ab4af688f83e57aa | |||||
| DOI | ||||||
| 関連タイプ | isVersionOf | |||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | https://doi.org/10.1039/C9CP01647C | |||||
| ISSN（print） | ||||||
| 収録物識別子タイプ | PISSN | |||||
| 収録物識別子 | 1463-9076 | |||||
| 書誌情報 |
en : Physical Chemistry Chemical Physics 巻 21, 号 35, p. 18823-18829, 発行日 2019-09-21 |
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| 著者版フラグ | ||||||
| 値 | author | |||||
