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Ionic liquid thin layer-induced memory effects in organic field-effect transistors
http://hdl.handle.net/2237/00030980
http://hdl.handle.net/2237/00030980dd9dfac2-120d-49c2-bb8f-09aa43d09015
名前 / ファイル | ライセンス | アクション |
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2019-12-17 | |||||
タイトル | ||||||
タイトル | Ionic liquid thin layer-induced memory effects in organic field-effect transistors | |||||
言語 | en | |||||
著者 |
Eguchi, Keitaro
× Eguchi, Keitaro× Matsushita, Michio M.× Awaga, Kunio |
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アクセス権 | ||||||
アクセス権 | open access | |||||
アクセス権URI | http://purl.org/coar/access_right/c_abf2 | |||||
抄録 | ||||||
内容記述 | We examined the morphologies and structures of pentacene and C60 thin films grown on thin layers of an ionic liquid, N,N-diethyl-N-methyl-N-(2-methoxyethyl)ammonium bis(trifluoromethanesulfonyl)imide (DEME-TFSI), and found that the characteristics of the films depended significantly on the thickness of DEME-TFSI. In addition, we fabricated organic field-effect transistors (OFETs) of pentacene and C60 in which a thin layer of DEME-TFSI was inserted between the organic semiconductor (pentacene or C60) and the gate insulating layer, and measured their performance in situ. We found that 1.5–2 ML (ML: monolayer) DEME-TFSI produced a large hysteresis loop in the transfer characteristics in these OFETs, but 5 ML DEME-TFSI resulted in the formation of normally-on states with far smaller memory effects. The curvatures of the hysteresis loops were caused by the formation of trap states induced by the DEME-TFSI layers. This novel technique provides a simple tool for creating hysteresis behavior and could potentially be applied to transistor memory devices. | |||||
言語 | en | |||||
内容記述タイプ | Abstract | |||||
内容記述 | ||||||
内容記述 | ファイル公開:2020/09/21 | |||||
言語 | ja | |||||
内容記述タイプ | Other | |||||
出版者 | ||||||
言語 | en | |||||
出版者 | Royal Society of Chemistry | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプresource | http://purl.org/coar/resource_type/c_6501 | |||||
タイプ | journal article | |||||
出版タイプ | ||||||
出版タイプ | AM | |||||
出版タイプResource | http://purl.org/coar/version/c_ab4af688f83e57aa | |||||
DOI | ||||||
関連タイプ | isVersionOf | |||||
識別子タイプ | DOI | |||||
関連識別子 | https://doi.org/10.1039/C9CP01647C | |||||
ISSN(print) | ||||||
収録物識別子タイプ | PISSN | |||||
収録物識別子 | 1463-9076 | |||||
書誌情報 |
en : Physical Chemistry Chemical Physics 巻 21, 号 35, p. 18823-18829, 発行日 2019-09-21 |
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著者版フラグ | ||||||
値 | author |