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Negative differential resistance in the Peierls insulating phases of TTF-TCNQ
http://hdl.handle.net/2237/00031517
http://hdl.handle.net/2237/0003151735b4f140-a34f-4846-993f-fd819bc2f913
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
PhysRevB96_045116 (1.7 MB)
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| Item type | 学術雑誌論文 / Journal Article(1) | |||||
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| 公開日 | 2020-02-17 | |||||
| タイトル | ||||||
| タイトル | Negative differential resistance in the Peierls insulating phases of TTF-TCNQ | |||||
| 言語 | en | |||||
| 著者 |
Tonouchi, Daiki
× Tonouchi, Daiki× Matsushita, Michio M.× Awaga, Kunio |
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| アクセス権 | ||||||
| アクセス権 | open access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_abf2 | |||||
| 権利 | ||||||
| 言語 | en | |||||
| 権利情報 | ©2017 American Physical Society | |||||
| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | Negative differential resistance (NDR) was observed in the most well known organic conductor, TTF-TCNQ, in its low-temperature Peierls insulator phase below 53 K. The voltage-current (V−I) characteristics below this temperature, measured by a four-probe method, exhibited unique NDR behavior, in which the dV/dI versus conductivity (σ) plots had the inflection points at the three σ values without depending on temperature. These σ values were found to coincide with the conductivities at the three transition temperatures (53, 49, and 38 K) for the formation of the charge-density waves in TTF-TCNQ. This suggests that the electronic structure of the Peierls insulating phase of TTF-TCNQ is governed by the total carrier density, which is determined by not only thermal excitation but also carrier injection. | |||||
| 言語 | en | |||||
| 出版者 | ||||||
| 出版者 | American Physical Society | |||||
| 言語 | en | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプresource | http://purl.org/coar/resource_type/c_6501 | |||||
| タイプ | journal article | |||||
| 出版タイプ | ||||||
| 出版タイプ | VoR | |||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
| DOI | ||||||
| 関連タイプ | isVersionOf | |||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | https://doi.org/10.1103/PhysRevB.96.045116 | |||||
| ISSN（print） | ||||||
| 収録物識別子タイプ | PISSN | |||||
| 収録物識別子 | 2469-9950 | |||||
| 書誌情報 |
en : Physical Review B 巻 96, 号 4, p. 045116, 発行日 2017-07 |
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| 著者版フラグ | ||||||
| 値 | publisher | |||||
