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  1. F200 未来材料・システム研究所
  2. F200a 雑誌掲載論文
  3. 学術雑誌

Effect of unevenly-distributed V pits on the optical and electrical characteristics of green micro-light emitting diode

http://hdl.handle.net/2237/00031650
http://hdl.handle.net/2237/00031650
4007d7f8-9506-4ddf-abb2-ea479d6e9cb6
名前 / ファイル ライセンス アクション
JPD_V JPD_V pit_article_rev_2_clean.docx (1.2 MB)
Item type 学術雑誌論文 / Journal Article(1)
公開日 2020-03-16
タイトル
タイトル Effect of unevenly-distributed V pits on the optical and electrical characteristics of green micro-light emitting diode
言語 en
著者 Lee, Da-Hoon

× Lee, Da-Hoon

WEKO 96810

en Lee, Da-Hoon

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Kang, Daesung

× Kang, Daesung

WEKO 96811

en Kang, Daesung

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Seong, Tae-Yeon

× Seong, Tae-Yeon

WEKO 96812

en Seong, Tae-Yeon

Search repository
Kneissl, Michael

× Kneissl, Michael

WEKO 96813

en Kneissl, Michael

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Amano, Hiroshi

× Amano, Hiroshi

WEKO 96814

en Amano, Hiroshi

Search repository
アクセス権
アクセス権 open access
アクセス権URI http://purl.org/coar/access_right/c_abf2
権利
言語 en
権利情報 This is an author-created, un-copyedited version of an article published in {Journal of Physics D: Applied Physics}. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at {https://doi.org/10.1088/1361-6463/ab52d0}. “This Accepted Manuscript is available for reuse under a CC BY-NC-ND 4.0 licence after the 12 month embargo period provided that all the terms of the licence are adhered to”
抄録
内容記述 In this study, we investigated the effect of different-size V pits on the opto-electrical performance of different-size InGaN-based green (520 nm) light-emitting diodes (LEDs). The size of V pits varied from 57 to 250 nm. Two different-size LEDs (10 and 300 µm) were fabricated with flip-chip structures. It was shown that at 4 A cm^−2, the forward voltages of 300 µm-size and 10 µm-size LEDs were in the range of 2.32–2.82 V and 2.23–2.53 V, respectively. Compared with the LEDs with small V pits, the LEDs with large V pits produced higher output power at the high current region (>50 A cm^−2), but lower output power at the low current region (<20 A cm^−2). The 300 µm-size LEDs displayed maximum external quantum efficiency (EQE) at 2 A cm^−2, whereas the 10 µm-size LEDs exhibited peak EQE at current densities  ≥13 A cm^−2. For all samples, the electroluminescence (EL) wavelengths were blue shifted with increasing current density. Unlike the 300 µm-size LEDs, the 10 µm-size LEDs exhibited a large deviation in the light output, EQE, and EL wavelength. The 10 µm-size LEDs revealed larger S than the 300 µm-size LEDs. The backscattered electron (BSE) and monochromatic cathodoluminescence (CL) results showed that for all samples, V pits were unevenly distributed across the whole wafer. Based on the CL and BSE results, the effect of different V pit sizes on the performance of green micro-LEDs at the low current region is described and discussed.
言語 en
内容記述タイプ Abstract
内容記述
内容記述 ファイル公開:2021-01-23
言語 ja
内容記述タイプ Other
出版者
言語 en
出版者 IOP publishing
言語
言語 eng
資源タイプ
資源タイプresource http://purl.org/coar/resource_type/c_6501
タイプ journal article
出版タイプ
出版タイプ AM
出版タイプResource http://purl.org/coar/version/c_ab4af688f83e57aa
DOI
関連タイプ isVersionOf
識別子タイプ DOI
関連識別子 https://doi.org/10.1088/1361-6463/ab52d0
ISSN(print)
収録物識別子タイプ PISSN
収録物識別子 0022-3727
書誌情報 en : Journal of Physics D: Applied Physics

巻 53, 号 4, p. 045106, 発行日 2020-01-23
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