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  1. F200 未来材料・システム研究所
  2. F200a 雑誌掲載論文
  3. 学術雑誌

Recovery of quantum efficiency on Cs/O-activated GaN and GaAs photocathodes by thermal annealing in vacuum

http://hdl.handle.net/2237/00033518
http://hdl.handle.net/2237/00033518
943eb9ee-e258-4e47-a38f-73c30b7875c1
名前 / ファイル ライセンス アクション
Sato_article.pdf Sato_article (947.9 kB)
Item type 学術雑誌論文 / Journal Article(1)
公開日 2021-02-10
タイトル
タイトル Recovery of quantum efficiency on Cs/O-activated GaN and GaAs photocathodes by thermal annealing in vacuum
言語 en
著者 Sato, Daiki

× Sato, Daiki

WEKO 103471

en Sato, Daiki

Search repository
Nishitani, Tomohiro

× Nishitani, Tomohiro

WEKO 103472

en Nishitani, Tomohiro

Search repository
Honda, Yoshio

× Honda, Yoshio

WEKO 103473

en Honda, Yoshio

Search repository
Amano, Hiroshi

× Amano, Hiroshi

WEKO 103474

en Amano, Hiroshi

Search repository
アクセス権
アクセス権 open access
アクセス権URI http://purl.org/coar/access_right/c_abf2
権利
言語 en
権利情報 Copyright 2020 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing.The following article appeared in (Journal of Vacuum Science & Technology B. v.38, n.1, 2020, p.012603) and may be found at (http://dx.doi.org/10.1116/1.5120417).
抄録
内容記述 In this paper, the authors describe the effectiveness of thermal annealing in vacuum for quantum efficiency (QE) recovery from Cs/O-activated GaN and GaAs photocathodes. The QE of Cs/O-activated GaN photocathodes at 3.4 eV dropped from 1.0% to <0.001% upon exposure to nitrogen and then increased to 0.6% upon annealing. On the other hand, the QE of Cs/O-activated GaAs at 1.42 eV did not increase after annealing. In addition, after Cs/O activation, the sample was exposed to normal laboratory air and installed in an X-ray photoemission spectroscopy system. Upon annealing at 330 °C, three key results were confirmed as follows: (1) the work function decreased by 0.32 eV, (2) the chemical states of Cs 4d and Ga 3d were unchanged, and (3) the intensities of O 1s and C 1s on the high-binding-energy side decreased. In conclusion, the experimental results indicate that the annealing recovers the QE of Cs/O-activated GaN photocathode.
言語 en
内容記述タイプ Abstract
出版者
言語 en
出版者 AIP Publishing
言語
言語 eng
資源タイプ
資源タイプresource http://purl.org/coar/resource_type/c_6501
タイプ journal article
出版タイプ
出版タイプ AM
出版タイプResource http://purl.org/coar/version/c_ab4af688f83e57aa
DOI
関連タイプ isVersionOf
識別子タイプ DOI
関連識別子 https://doi.org/10.1116/1.5120417
ISSN(print)
収録物識別子タイプ PISSN
収録物識別子 2166-2746
書誌情報 en : Journal of Vacuum Science & Technology B

巻 38, 号 1, p. 012603, 発行日 2020-01
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