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Recovery of quantum efficiency on Cs/O-activated GaN and GaAs photocathodes by thermal annealing in vacuum
http://hdl.handle.net/2237/00033518
http://hdl.handle.net/2237/00033518943eb9ee-e258-4e47-a38f-73c30b7875c1
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
Sato_article (947.9 kB)
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| Item type | 学術雑誌論文 / Journal Article(1) | |||||
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| 公開日 | 2021-02-10 | |||||
| タイトル | ||||||
| タイトル | Recovery of quantum efficiency on Cs/O-activated GaN and GaAs photocathodes by thermal annealing in vacuum | |||||
| 言語 | en | |||||
| 著者 |
Sato, Daiki
× Sato, Daiki× Nishitani, Tomohiro× Honda, Yoshio× Amano, Hiroshi |
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| アクセス権 | ||||||
| アクセス権 | open access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_abf2 | |||||
| 権利 | ||||||
| 言語 | en | |||||
| 権利情報 | Copyright 2020 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing.The following article appeared in (Journal of Vacuum Science & Technology B. v.38, n.1, 2020, p.012603) and may be found at (http://dx.doi.org/10.1116/1.5120417). | |||||
| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | In this paper, the authors describe the effectiveness of thermal annealing in vacuum for quantum efficiency (QE) recovery from Cs/O-activated GaN and GaAs photocathodes. The QE of Cs/O-activated GaN photocathodes at 3.4 eV dropped from 1.0% to <0.001% upon exposure to nitrogen and then increased to 0.6% upon annealing. On the other hand, the QE of Cs/O-activated GaAs at 1.42 eV did not increase after annealing. In addition, after Cs/O activation, the sample was exposed to normal laboratory air and installed in an X-ray photoemission spectroscopy system. Upon annealing at 330 °C, three key results were confirmed as follows: (1) the work function decreased by 0.32 eV, (2) the chemical states of Cs 4d and Ga 3d were unchanged, and (3) the intensities of O 1s and C 1s on the high-binding-energy side decreased. In conclusion, the experimental results indicate that the annealing recovers the QE of Cs/O-activated GaN photocathode. | |||||
| 言語 | en | |||||
| 出版者 | ||||||
| 出版者 | AIP Publishing | |||||
| 言語 | en | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプresource | http://purl.org/coar/resource_type/c_6501 | |||||
| タイプ | journal article | |||||
| 出版タイプ | ||||||
| 出版タイプ | AM | |||||
| 出版タイプResource | http://purl.org/coar/version/c_ab4af688f83e57aa | |||||
| DOI | ||||||
| 関連タイプ | isVersionOf | |||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | https://doi.org/10.1116/1.5120417 | |||||
| ISSN（print） | ||||||
| 収録物識別子タイプ | PISSN | |||||
| 収録物識別子 | 2166-2746 | |||||
| 書誌情報 |
en : Journal of Vacuum Science & Technology B 巻 38, 号 1, p. 012603, 発行日 2020-01 |
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| 著者版フラグ | ||||||
| 値 | author | |||||
