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  1. B200 工学部/工学研究科
  2. B200a 雑誌掲載論文
  3. 学術雑誌

Defect structure in selective area growth GaN pyramid on (111)Si substrate

http://hdl.handle.net/2237/6983
http://hdl.handle.net/2237/6983
74cd0058-17a6-45d6-9465-b10856e208cd
名前 / ファイル ライセンス アクション
ApplPhysLett_76_2701.pdf ApplPhysLett_76_2701.pdf (370.2 kB)
Item type 学術雑誌論文 / Journal Article(1)
公開日 2006-10-19
タイトル
タイトル Defect structure in selective area growth GaN pyramid on (111)Si substrate
言語 en
著者 Tanaka, Shigeyasu

× Tanaka, Shigeyasu

WEKO 13709

en Tanaka, Shigeyasu

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Kawaguchi, Yasutoshi

× Kawaguchi, Yasutoshi

WEKO 13710

en Kawaguchi, Yasutoshi

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Sawaki, Nobuhiko

× Sawaki, Nobuhiko

WEKO 13711

en Sawaki, Nobuhiko

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Hibino, Michio

× Hibino, Michio

WEKO 13712

en Hibino, Michio

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Hiramatsu, Kazumasa

× Hiramatsu, Kazumasa

WEKO 13713

en Hiramatsu, Kazumasa

Search repository
アクセス権
アクセス権 open access
アクセス権URI http://purl.org/coar/access_right/c_abf2
権利
言語 en
権利情報 Copyright (2000) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
抄録
内容記述 A GaN pyramid grown selectively on a (111)Si substrate with a patterned dot structure of a SiO_2 mask, by metalorganic vapor phase epitaxy using AlGaN as an intermediate layer, was characterized by transmission electron microscopy. The dot pattern has an array of 5.0-μm-diameter window openings with a 10 μm period. The density of threading dislocations observed in the window region decreased gradually with increasing distance from the interface. This was mainly due to the dislocation reaction and bending of threading dislocations for the first 2 μm region from the interface and for the upper region, respectively. Dominantly observed defects in the lateral-growth part were dislocations parallel to the interface. An amorphous layer was formed at the interface in the window region. Nitride particles were observed at the interface in the mask region.
言語 en
内容記述タイプ Abstract
出版者
言語 en
出版者 American Institute of Physics
言語
言語 eng
資源タイプ
資源タイプresource http://purl.org/coar/resource_type/c_6501
タイプ journal article
出版タイプ
出版タイプ VoR
出版タイプResource http://purl.org/coar/version/c_970fb48d4fbd8a85
DOI
関連タイプ isVersionOf
識別子タイプ DOI
関連識別子 https://doi.org/10.1063/1.126448
ISSN
収録物識別子タイプ PISSN
収録物識別子 0003-6951
書誌情報 en : Applied Physics Letters

巻 76, 号 19, p. 2701-2703, 発行日 2000-05-08
フォーマット
application/pdf
著者版フラグ
値 publisher
URI
識別子 http://hdl.handle.net/2237/6983
識別子タイプ HDL
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