{"_buckets": {"deposit": "70f0b852-194b-4620-a3b1-408f138e9cc5"}, "_deposit": {"id": "5378", "owners": [], "pid": {"revision_id": 0, "type": "depid", "value": "5378"}, "status": "published"}, "_oai": {"id": "oai:nagoya.repo.nii.ac.jp:00005378"}, "item_10_biblio_info_6": {"attribute_name": "\u66f8\u8a8c\u60c5\u5831", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2000-05-08", "bibliographicIssueDateType": "Issued"}, "bibliographicIssueNumber": "19", "bibliographicPageEnd": "2703", "bibliographicPageStart": "2701", "bibliographicVolumeNumber": "76", "bibliographic_titles": [{"bibliographic_title": "Applied Physics Letters"}]}]}, "item_10_description_4": {"attribute_name": "\u6284\u9332", "attribute_value_mlt": [{"subitem_description": "A GaN pyramid grown selectively on a (111)Si substrate with a patterned dot structure of a SiO_2\nmask, by metalorganic vapor phase epitaxy using AlGaN as an intermediate layer, was characterized\nby transmission electron microscopy. The dot pattern has an array of 5.0-\u03bcm-diameter window\nopenings with a 10 \u03bcm period. The density of threading dislocations observed in the window region\ndecreased gradually with increasing distance from the interface. This was mainly due to the\ndislocation reaction and bending of threading dislocations for the first 2 \u03bcm region from the\ninterface and for the upper region, respectively. Dominantly observed defects in the lateral-growth\npart were dislocations parallel to the interface. An amorphous layer was formed at the interface in\nthe window region. Nitride particles were observed at the interface in the mask region.", "subitem_description_type": "Abstract"}]}, "item_10_identifier_60": {"attribute_name": "URI", "attribute_value_mlt": [{"subitem_identifier_type": "HDL", "subitem_identifier_uri": "http://hdl.handle.net/2237/6983"}]}, "item_10_publisher_32": {"attribute_name": "\u51fa\u7248\u8005", "attribute_value_mlt": [{"subitem_publisher": "American Institute of Physics"}]}, "item_10_relation_11": {"attribute_name": "DOI", "attribute_value_mlt": [{"subitem_relation_type_id": {"subitem_relation_type_id_text": "http://dx.doi.org/10.1063/1.126448", "subitem_relation_type_select": "DOI"}}]}, "item_10_rights_12": {"attribute_name": "\u6a29\u5229", "attribute_value_mlt": [{"subitem_rights": "Copyright (2000) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics."}]}, "item_10_select_15": {"attribute_name": "\u8457\u8005\u7248\u30d5\u30e9\u30b0", "attribute_value_mlt": [{"subitem_select_item": "publisher"}]}, "item_10_source_id_7": {"attribute_name": "ISSN", "attribute_value_mlt": [{"subitem_source_identifier": "0003-6951", "subitem_source_identifier_type": "ISSN"}]}, "item_10_text_14": {"attribute_name": "\u30d5\u30a9\u30fc\u30de\u30c3\u30c8", "attribute_value_mlt": [{"subitem_text_value": "application/pdf"}]}, "item_creator": {"attribute_name": "\u8457\u8005", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "Tanaka, Shigeyasu"}], "nameIdentifiers": [{"nameIdentifier": "13709", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Kawaguchi, Yasutoshi"}], "nameIdentifiers": [{"nameIdentifier": "13710", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Sawaki, Nobuhiko"}], "nameIdentifiers": [{"nameIdentifier": "13711", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Hibino, Michio"}], "nameIdentifiers": [{"nameIdentifier": "13712", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Hiramatsu, Kazumasa"}], "nameIdentifiers": [{"nameIdentifier": "13713", "nameIdentifierScheme": "WEKO"}]}]}, "item_files": {"attribute_name": "\u30d5\u30a1\u30a4\u30eb\u60c5\u5831", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2018-02-19"}], "displaytype": "detail", "download_preview_message": "", "file_order": 0, "filename": "ApplPhysLett_76_2701.pdf", "filesize": [{"value": "370.2 kB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "licensetype": "license_free", "mimetype": "application/pdf", "size": 370200.0, "url": {"label": "ApplPhysLett_76_2701.pdf", "url": "https://nagoya.repo.nii.ac.jp/record/5378/files/ApplPhysLett_76_2701.pdf"}, "version_id": "f4ba5c70-7d52-4c14-ace3-648c0a45da72"}]}, "item_language": {"attribute_name": "\u8a00\u8a9e", "attribute_value_mlt": [{"subitem_language": "eng"}]}, "item_resource_type": {"attribute_name": "\u8cc7\u6e90\u30bf\u30a4\u30d7", "attribute_value_mlt": [{"resourcetype": "journal article", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "Defect structure in selective area growth GaN pyramid on (111)Si substrate", "item_titles": {"attribute_name": "\u30bf\u30a4\u30c8\u30eb", "attribute_value_mlt": [{"subitem_title": "Defect structure in selective area growth GaN pyramid on (111)Si substrate"}]}, "item_type_id": "10", "owner": "1", "path": ["320/321/322"], "permalink_uri": "http://hdl.handle.net/2237/6983", "pubdate": {"attribute_name": "\u516c\u958b\u65e5", "attribute_value": "2006-10-19"}, "publish_date": "2006-10-19", "publish_status": "0", "recid": "5378", "relation": {}, "relation_version_is_last": true, "title": ["Defect structure in selective area growth GaN pyramid on (111)Si substrate"], "weko_shared_id": 3}