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Defect structure in selective area growth GaN pyramid on (111)Si substrate
http://hdl.handle.net/2237/6983
http://hdl.handle.net/2237/698374cd0058-17a6-45d6-9465-b10856e208cd
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
ApplPhysLett_76_2701.pdf (370.2 kB)
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| Item type | 学術雑誌論文 / Journal Article(1) | |||||
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| 公開日 | 2006-10-19 | |||||
| タイトル | ||||||
| タイトル | Defect structure in selective area growth GaN pyramid on (111)Si substrate | |||||
| 言語 | en | |||||
| 著者 |
Tanaka, Shigeyasu
× Tanaka, Shigeyasu× Kawaguchi, Yasutoshi× Sawaki, Nobuhiko× Hibino, Michio× Hiramatsu, Kazumasa |
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| アクセス権 | ||||||
| アクセス権 | open access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_abf2 | |||||
| 権利 | ||||||
| 言語 | en | |||||
| 権利情報 | Copyright (2000) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. | |||||
| 抄録 | ||||||
| 内容記述 | A GaN pyramid grown selectively on a (111)Si substrate with a patterned dot structure of a SiO_2 mask, by metalorganic vapor phase epitaxy using AlGaN as an intermediate layer, was characterized by transmission electron microscopy. The dot pattern has an array of 5.0-μm-diameter window openings with a 10 μm period. The density of threading dislocations observed in the window region decreased gradually with increasing distance from the interface. This was mainly due to the dislocation reaction and bending of threading dislocations for the first 2 μm region from the interface and for the upper region, respectively. Dominantly observed defects in the lateral-growth part were dislocations parallel to the interface. An amorphous layer was formed at the interface in the window region. Nitride particles were observed at the interface in the mask region. | |||||
| 言語 | en | |||||
| 内容記述タイプ | Abstract | |||||
| 出版者 | ||||||
| 言語 | en | |||||
| 出版者 | American Institute of Physics | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプresource | http://purl.org/coar/resource_type/c_6501 | |||||
| タイプ | journal article | |||||
| 出版タイプ | ||||||
| 出版タイプ | VoR | |||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
| DOI | ||||||
| 関連タイプ | isVersionOf | |||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | https://doi.org/10.1063/1.126448 | |||||
| ISSN | ||||||
| 収録物識別子タイプ | PISSN | |||||
| 収録物識別子 | 0003-6951 | |||||
| 書誌情報 |
en : Applied Physics Letters 巻 76, 号 19, p. 2701-2703, 発行日 2000-05-08 |
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| フォーマット | ||||||
| application/pdf | ||||||
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| 値 | publisher | |||||
| URI | ||||||
| 識別子 | http://hdl.handle.net/2237/6983 | |||||
| 識別子タイプ | HDL | |||||
