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Sub-5 nm gold dot formation using retarding-field single ion deposition
http://hdl.handle.net/2237/6992
http://hdl.handle.net/2237/69923bcea8df-f792-4657-ba06-e59563e59d75
名前 / ファイル | ライセンス | アクション |
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ApplPhysLett_73_3223.pdf (181.5 kB)
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2006-10-20 | |||||
タイトル | ||||||
タイトル | Sub-5 nm gold dot formation using retarding-field single ion deposition | |||||
言語 | en | |||||
著者 |
Hori, M.
× Hori, M.× Woodham, RG.× Ahmed, H. |
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アクセス権 | ||||||
アクセス権 | open access | |||||
アクセス権URI | http://purl.org/coar/access_right/c_abf2 | |||||
権利 | ||||||
言語 | en | |||||
権利情報 | Copyright (1998) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. | |||||
抄録 | ||||||
内容記述 | Gold dots of 2.5 nm mean diameter and 0.8 nm standard deviation have been fabricated successfully on chromium oxide (CrO_x) thin films. The CrO_x thin films were deposited on Si substrates by sputtering and gold dots were subsequently deposited by a retarding-field single ion deposition (RSID) technique. The formation of gold dots has been investigated systematically with landing energies from 100 to 900 eV and doses from 10 to 40 C/m^2. The dot diameter and density could be controlled by varying the landing energy and dose of gold ions arriving on the surface. The formation of single electron devices, quantum dots, nanopillars, and other nanoscale device structures is proposed using the RSID technique. | |||||
言語 | en | |||||
内容記述タイプ | Abstract | |||||
出版者 | ||||||
言語 | en | |||||
出版者 | American Institute of Physics | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプresource | http://purl.org/coar/resource_type/c_6501 | |||||
タイプ | journal article | |||||
出版タイプ | ||||||
出版タイプ | VoR | |||||
出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
DOI | ||||||
関連タイプ | isVersionOf | |||||
識別子タイプ | DOI | |||||
関連識別子 | https://doi.org/10.1063/1.122725 | |||||
ISSN | ||||||
収録物識別子タイプ | PISSN | |||||
収録物識別子 | 0003-6951 | |||||
書誌情報 |
en : Applied Physics Letters 巻 73, 号 22, p. 3223-3225, 発行日 1998-11-30 |
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フォーマット | ||||||
application/pdf | ||||||
著者版フラグ | ||||||
値 | publisher | |||||
URI | ||||||
識別子 | http://hdl.handle.net/2237/6992 | |||||
識別子タイプ | HDL |