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{"_buckets": {"deposit": "db9a3ce1-ec3b-4d3f-bdf7-8bc11a1829b5"}, "_deposit": {"id": "5399", "owners": [], "pid": {"revision_id": 0, "type": "depid", "value": "5399"}, "status": "published"}, "_oai": {"id": "oai:nagoya.repo.nii.ac.jp:00005399", "sets": ["322"]}, "author_link": ["13795", "13796", "13797", "13798"], "item_10_biblio_info_6": {"attribute_name": "書誌情報", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2002-01-14", "bibliographicIssueDateType": "Issued"}, "bibliographicIssueNumber": "2", "bibliographicPageEnd": "224", "bibliographicPageStart": "222", "bibliographicVolumeNumber": "80", "bibliographic_titles": [{"bibliographic_title": "Applied Physics Letters", "bibliographic_titleLang": "en"}]}]}, "item_10_description_4": {"attribute_name": "抄録", "attribute_value_mlt": [{"subitem_description": "The selective metalorganic vapor-phase epitaxy of wurtzite GaN was performed on a (111) silicon substrate using SiO_2 grid mask pattern. Within window regions of (0.2–0.5) mm*(0.2–0.5) mm, GaN films free from cracks were achieved. The full width at half maximum of the (0004) X-ray rocking curve was as narrow as 388 arcs and that of the band edge emission was 18.6 meV at 77 K. The band edge emission peak energy was redshifted. The redshift is reduced slightly in a sample grown on small windows. This suggests that the biaxial strain due to the thermal expansion coefficient mismatch is partly relaxed on small windows.", "subitem_description_language": "en", "subitem_description_type": "Abstract"}]}, "item_10_identifier_60": {"attribute_name": "URI", "attribute_value_mlt": [{"subitem_identifier_type": "HDL", "subitem_identifier_uri": "http://hdl.handle.net/2237/7003"}]}, "item_10_publisher_32": {"attribute_name": "出版者", "attribute_value_mlt": [{"subitem_publisher": "American Institute of Physics", "subitem_publisher_language": "en"}]}, "item_10_relation_11": {"attribute_name": "DOI", "attribute_value_mlt": [{"subitem_relation_type": "isVersionOf", "subitem_relation_type_id": {"subitem_relation_type_id_text": "https://doi.org/10.1063/1.1432764", "subitem_relation_type_select": "DOI"}}]}, "item_10_rights_12": {"attribute_name": "権利", "attribute_value_mlt": [{"subitem_rights": "Copyright (2002) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.", "subitem_rights_language": "en"}]}, "item_10_select_15": {"attribute_name": "著者版フラグ", "attribute_value_mlt": [{"subitem_select_item": "publisher"}]}, "item_10_source_id_7": {"attribute_name": "ISSN", "attribute_value_mlt": [{"subitem_source_identifier": "0003-6951", "subitem_source_identifier_type": "PISSN"}]}, "item_10_text_14": {"attribute_name": "フォーマット", "attribute_value_mlt": [{"subitem_text_value": "application/pdf"}]}, "item_1615787544753": {"attribute_name": "出版タイプ", "attribute_value_mlt": [{"subitem_version_resource": "http://purl.org/coar/version/c_970fb48d4fbd8a85", "subitem_version_type": "VoR"}]}, "item_access_right": {"attribute_name": "アクセス権", "attribute_value_mlt": [{"subitem_access_right": "open access", "subitem_access_right_uri": "http://purl.org/coar/access_right/c_abf2"}]}, "item_creator": {"attribute_name": "著者", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "Honda, Y.", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "13795", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Kuroiwa, Y.", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "13796", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Yamaguchi, M.", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "13797", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Sawaki, N.", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "13798", "nameIdentifierScheme": "WEKO"}]}]}, "item_files": {"attribute_name": "ファイル情報", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2018-02-19"}], "displaytype": "detail", "download_preview_message": "", "file_order": 0, "filename": "ApplPhysLett_80_222.pdf", "filesize": [{"value": "93.0 kB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "licensetype": "license_note", "mimetype": "application/pdf", "size": 93000.0, "url": {"label": "ApplPhysLett_80_222.pdf", "objectType": "fulltext", "url": "https://nagoya.repo.nii.ac.jp/record/5399/files/ApplPhysLett_80_222.pdf"}, "version_id": "bd9499a2-4fc6-4f60-9c2b-b2f701677ce7"}]}, "item_language": {"attribute_name": "言語", "attribute_value_mlt": [{"subitem_language": "eng"}]}, "item_resource_type": {"attribute_name": "資源タイプ", "attribute_value_mlt": [{"resourcetype": "journal article", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "Growth of GaN free from cracks on a (111)Si substrate by selective metalorganic vapor-phase epitaxy", "item_titles": {"attribute_name": "タイトル", "attribute_value_mlt": [{"subitem_title": "Growth of GaN free from cracks on a (111)Si substrate by selective metalorganic vapor-phase epitaxy", "subitem_title_language": "en"}]}, "item_type_id": "10", "owner": "1", "path": ["322"], "permalink_uri": "http://hdl.handle.net/2237/7003", "pubdate": {"attribute_name": "PubDate", "attribute_value": "2006-10-23"}, "publish_date": "2006-10-23", "publish_status": "0", "recid": "5399", "relation": {}, "relation_version_is_last": true, "title": ["Growth of GaN free from cracks on a (111)Si substrate by selective metalorganic vapor-phase epitaxy"], "weko_shared_id": -1}
Growth of GaN free from cracks on a (111)Si substrate by selective metalorganic vapor-phase epitaxy
http://hdl.handle.net/2237/7003
http://hdl.handle.net/2237/7003b177835b-6978-4287-a33d-51e6d347f710
名前 / ファイル | ライセンス | アクション |
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2006-10-23 | |||||
タイトル | ||||||
タイトル | Growth of GaN free from cracks on a (111)Si substrate by selective metalorganic vapor-phase epitaxy | |||||
言語 | en | |||||
著者 |
Honda, Y.
× Honda, Y.× Kuroiwa, Y.× Yamaguchi, M.× Sawaki, N. |
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アクセス権 | ||||||
アクセス権 | open access | |||||
アクセス権URI | http://purl.org/coar/access_right/c_abf2 | |||||
権利 | ||||||
言語 | en | |||||
権利情報 | Copyright (2002) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. | |||||
抄録 | ||||||
内容記述 | The selective metalorganic vapor-phase epitaxy of wurtzite GaN was performed on a (111) silicon substrate using SiO_2 grid mask pattern. Within window regions of (0.2–0.5) mm*(0.2–0.5) mm, GaN films free from cracks were achieved. The full width at half maximum of the (0004) X-ray rocking curve was as narrow as 388 arcs and that of the band edge emission was 18.6 meV at 77 K. The band edge emission peak energy was redshifted. The redshift is reduced slightly in a sample grown on small windows. This suggests that the biaxial strain due to the thermal expansion coefficient mismatch is partly relaxed on small windows. | |||||
言語 | en | |||||
内容記述タイプ | Abstract | |||||
出版者 | ||||||
言語 | en | |||||
出版者 | American Institute of Physics | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプresource | http://purl.org/coar/resource_type/c_6501 | |||||
タイプ | journal article | |||||
出版タイプ | ||||||
出版タイプ | VoR | |||||
出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
DOI | ||||||
関連タイプ | isVersionOf | |||||
識別子タイプ | DOI | |||||
関連識別子 | https://doi.org/10.1063/1.1432764 | |||||
ISSN | ||||||
収録物識別子タイプ | PISSN | |||||
収録物識別子 | 0003-6951 | |||||
書誌情報 |
en : Applied Physics Letters 巻 80, 号 2, p. 222-224, 発行日 2002-01-14 |
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フォーマット | ||||||
application/pdf | ||||||
著者版フラグ | ||||||
値 | publisher | |||||
URI | ||||||
識別子 | http://hdl.handle.net/2237/7003 | |||||
識別子タイプ | HDL |