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Praseodymium silicate formed by postdeposition high-temperature annealing
http://hdl.handle.net/2237/7010
http://hdl.handle.net/2237/7010d1be8d28-4590-4050-99e5-1c48ac80707c
名前 / ファイル | ライセンス | アクション |
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ApplPhysLett_85_5322.pdf (151.1 kB)
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2006-10-23 | |||||
タイトル | ||||||
タイトル | Praseodymium silicate formed by postdeposition high-temperature annealing | |||||
言語 | en | |||||
著者 |
Sakai, Akira
× Sakai, Akira× Sakashita, Shinsuke× Sakashita, Mitsuo× Yasuda, Yukio× Zaima, Shigeaki× Miyazaki, Seiichi |
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アクセス権 | ||||||
アクセス権 | open access | |||||
アクセス権URI | http://purl.org/coar/access_right/c_abf2 | |||||
権利 | ||||||
言語 | en | |||||
権利情報 | Copyright (2004) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. | |||||
抄録 | ||||||
内容記述 | Praseodymium silicate (Pr silicate) has been synthesized by molecular-beam deposition of Pr_2O_3 layers on Si(111) substrates and subsequent high-temperature postdeposition annealing at 1000 ℃. This thermal treatment drastically changes the film texture from the crystalline Pr_2O_3 epitaxially grown on Si, into Pr silicate with completely amorphized structures, resulting from intermixing of Si from the substrate. It was found that the electrical characteristics of Pr silicate were critically dependent on the quality of the as-deposited Pr_2O_3 films. A typical dielectric constant and a leakage current density of Pr silicate grown under an optimal condition were, respectively, 19.7 and 3 *10^−9 A cm^−2 at + 1 V relative to the flatband voltage for an equivalent oxide thickness of 1.9 nm. Using x-ray photoelectron spectroscopy, a valence-band offset at the Pr-silicate/Si(111) interface of 2.75 eV and a band gap of 6.50 eV were obtained. The large band gap and the highly symmetric band alignment account for the observed low leakage current density. | |||||
言語 | en | |||||
内容記述タイプ | Abstract | |||||
出版者 | ||||||
言語 | en | |||||
出版者 | American Institute of Physics | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプresource | http://purl.org/coar/resource_type/c_6501 | |||||
タイプ | journal article | |||||
出版タイプ | ||||||
出版タイプ | VoR | |||||
出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
DOI | ||||||
関連タイプ | isVersionOf | |||||
識別子タイプ | DOI | |||||
関連識別子 | https://doi.org/10.1063/1.1828584 | |||||
ISSN | ||||||
収録物識別子タイプ | PISSN | |||||
収録物識別子 | 0003-6951 | |||||
書誌情報 |
en : Applied Physics Letters 巻 85, 号 22, p. 5322-5324, 発行日 2004-11-29 |
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フォーマット | ||||||
application/pdf | ||||||
著者版フラグ | ||||||
値 | publisher | |||||
URI | ||||||
識別子 | http://hdl.handle.net/2237/7010 | |||||
識別子タイプ | HDL |