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  1. B200 工学部/工学研究科
  2. B200a 雑誌掲載論文
  3. 学術雑誌

Praseodymium silicate formed by postdeposition high-temperature annealing

http://hdl.handle.net/2237/7010
http://hdl.handle.net/2237/7010
d1be8d28-4590-4050-99e5-1c48ac80707c
名前 / ファイル ライセンス アクション
ApplPhysLett_85_5322.pdf ApplPhysLett_85_5322.pdf (151.1 kB)
Item type 学術雑誌論文 / Journal Article(1)
公開日 2006-10-23
タイトル
タイトル Praseodymium silicate formed by postdeposition high-temperature annealing
言語 en
著者 Sakai, Akira

× Sakai, Akira

WEKO 13829

en Sakai, Akira

Search repository
Sakashita, Shinsuke

× Sakashita, Shinsuke

WEKO 13830

en Sakashita, Shinsuke

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Sakashita, Mitsuo

× Sakashita, Mitsuo

WEKO 13831

en Sakashita, Mitsuo

Search repository
Yasuda, Yukio

× Yasuda, Yukio

WEKO 13832

en Yasuda, Yukio

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Zaima, Shigeaki

× Zaima, Shigeaki

WEKO 13833

en Zaima, Shigeaki

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Miyazaki, Seiichi

× Miyazaki, Seiichi

WEKO 13834

en Miyazaki, Seiichi

Search repository
アクセス権
アクセス権 open access
アクセス権URI http://purl.org/coar/access_right/c_abf2
権利
言語 en
権利情報 Copyright (2004) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
抄録
内容記述 Praseodymium silicate (Pr silicate) has been synthesized by molecular-beam deposition of Pr_2O_3 layers on Si(111) substrates and subsequent high-temperature postdeposition annealing at 1000 ℃. This thermal treatment drastically changes the film texture from the crystalline Pr_2O_3 epitaxially grown on Si, into Pr silicate with completely amorphized structures, resulting from intermixing of Si from the substrate. It was found that the electrical characteristics of Pr silicate were critically dependent on the quality of the as-deposited Pr_2O_3 films. A typical dielectric constant and a leakage current density of Pr silicate grown under an optimal condition were, respectively, 19.7 and 3 *10^−9 A cm^−2 at + 1 V relative to the flatband voltage for an equivalent oxide thickness of 1.9 nm. Using x-ray photoelectron spectroscopy, a valence-band offset at the Pr-silicate/Si(111) interface of 2.75 eV and a band gap of 6.50 eV were obtained. The large band gap and the highly symmetric band alignment account for the observed low leakage current density.
言語 en
内容記述タイプ Abstract
出版者
言語 en
出版者 American Institute of Physics
言語
言語 eng
資源タイプ
資源タイプresource http://purl.org/coar/resource_type/c_6501
タイプ journal article
出版タイプ
出版タイプ VoR
出版タイプResource http://purl.org/coar/version/c_970fb48d4fbd8a85
DOI
関連タイプ isVersionOf
識別子タイプ DOI
関連識別子 https://doi.org/10.1063/1.1828584
ISSN
収録物識別子タイプ PISSN
収録物識別子 0003-6951
書誌情報 en : Applied Physics Letters

巻 85, 号 22, p. 5322-5324, 発行日 2004-11-29
フォーマット
application/pdf
著者版フラグ
値 publisher
URI
識別子 http://hdl.handle.net/2237/7010
識別子タイプ HDL
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