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{"_buckets": {"deposit": "9f3a468c-688d-4cbe-ac22-20d2e65f5f78"}, "_deposit": {"id": "5429", "owners": [], "pid": {"revision_id": 0, "type": "depid", "value": "5429"}, "status": "published"}, "_oai": {"id": "oai:nagoya.repo.nii.ac.jp:00005429", "sets": ["322"]}, "author_link": ["13929", "13930", "13931", "13932", "13933", "13934", "13935", "13936"], "item_10_biblio_info_6": {"attribute_name": "書誌情報", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2000-07-01", "bibliographicIssueDateType": "Issued"}, "bibliographicIssueNumber": "1", "bibliographicPageEnd": "581", "bibliographicPageStart": "576", "bibliographicVolumeNumber": "88", "bibliographic_titles": [{"bibliographic_title": "Journal of Applied Physics", "bibliographic_titleLang": "en"}]}]}, "item_10_description_4": {"attribute_name": "抄録", "attribute_value_mlt": [{"subitem_description": "Microcrystalline silicon thin films were formed on quartz substrates by ultrahigh-frequency (UHF) plasma enhanced chemical vapor deposition from a mixture of silane (SiH_4) and hydrogen (H_2) gases at low substrate temperatures (T_s). The UHF plasma was excited at a frequency of 500 MHz. The deposition rate and the crystallinity of the films were investigated as a function of H_2 dilution, total pressure, mixture ratio of SiH_4 to H_2 and T_s . A crystalline fraction of 63% with a high deposition rate of 7.7 Å/s was obtained even at a T_s of 100 ℃. At a temperature of 300 ℃, a crystalline fraction of approximately 86% was achieved at a deposition rate of 1.4 Å/s. Diagnostics of the UHF plasma have been carried out using a Langmuir probe, ultraviolet absorption spectroscopy, and optical emission spectroscopy. Good crystallinity was explained by the balance of the sheath voltage and atomic hydrogen densities in the UHF plasma. Namely, the UHF plasma source achieving a high density plasma with a low electron temperature enabled us to reduce the ion bombardment energy incident on the substrates while maintaiing a high density of hydrogen atoms, and which improved the crystallinity at low T_s.", "subitem_description_language": "en", "subitem_description_type": "Abstract"}]}, "item_10_identifier_60": {"attribute_name": "URI", "attribute_value_mlt": [{"subitem_identifier_type": "HDL", "subitem_identifier_uri": "http://hdl.handle.net/2237/7034"}]}, "item_10_publisher_32": {"attribute_name": "出版者", "attribute_value_mlt": [{"subitem_publisher": "American Institute of Physics", "subitem_publisher_language": "en"}]}, "item_10_relation_11": {"attribute_name": "DOI", "attribute_value_mlt": [{"subitem_relation_type": "isVersionOf", "subitem_relation_type_id": {"subitem_relation_type_id_text": "https://doi.org/10.1063/1.373698", "subitem_relation_type_select": "DOI"}}]}, "item_10_rights_12": {"attribute_name": "権利", "attribute_value_mlt": [{"subitem_rights": "Copyright (2000) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.", "subitem_rights_language": "en"}]}, "item_10_select_15": {"attribute_name": "著者版フラグ", "attribute_value_mlt": [{"subitem_select_item": "publisher"}]}, "item_10_source_id_7": {"attribute_name": "ISSN", "attribute_value_mlt": [{"subitem_source_identifier": "0021-8979", "subitem_source_identifier_type": "PISSN"}]}, "item_10_text_14": {"attribute_name": "フォーマット", "attribute_value_mlt": [{"subitem_text_value": "application/pdf"}]}, "item_1615787544753": {"attribute_name": "出版タイプ", "attribute_value_mlt": [{"subitem_version_resource": "http://purl.org/coar/version/c_970fb48d4fbd8a85", "subitem_version_type": "VoR"}]}, "item_access_right": {"attribute_name": "アクセス権", "attribute_value_mlt": [{"subitem_access_right": "open access", "subitem_access_right_uri": "http://purl.org/coar/access_right/c_abf2"}]}, "item_creator": {"attribute_name": "著者", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "Sumiya, Shigeaki", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "13929", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Mizutani, Yuko", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "13930", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Yoshida, Ryohei", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "13931", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Hori, Masaru", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "13932", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Goto, Toshio", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "13933", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Ito, Masafumi", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "13934", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Tsukada, Tsutomu", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "13935", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Samukawa, Seiji", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "13936", "nameIdentifierScheme": "WEKO"}]}]}, "item_files": {"attribute_name": "ファイル情報", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2018-02-19"}], "displaytype": "detail", "download_preview_message": "", "file_order": 0, "filename": "JApplPhys_88_576.pdf", "filesize": [{"value": "189.5 kB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "licensetype": "license_note", "mimetype": "application/pdf", "size": 189500.0, "url": {"label": "JApplPhys_88_576.pdf", "objectType": "fulltext", "url": "https://nagoya.repo.nii.ac.jp/record/5429/files/JApplPhys_88_576.pdf"}, "version_id": "6f1397e5-c01e-4068-a6cf-a9596fc181d7"}]}, "item_language": {"attribute_name": "言語", "attribute_value_mlt": [{"subitem_language": "eng"}]}, "item_resource_type": {"attribute_name": "資源タイプ", "attribute_value_mlt": [{"resourcetype": "journal article", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "Plasma diagnostics and low-temperature deposition of microcrystalline silicon films in ultrahigh-frequency silane", "item_titles": {"attribute_name": "タイトル", "attribute_value_mlt": [{"subitem_title": "Plasma diagnostics and low-temperature deposition of microcrystalline silicon films in ultrahigh-frequency silane", "subitem_title_language": "en"}]}, "item_type_id": "10", "owner": "1", "path": ["322"], "permalink_uri": "http://hdl.handle.net/2237/7034", "pubdate": {"attribute_name": "PubDate", "attribute_value": "2006-10-24"}, "publish_date": "2006-10-24", "publish_status": "0", "recid": "5429", "relation": {}, "relation_version_is_last": true, "title": ["Plasma diagnostics and low-temperature deposition of microcrystalline silicon films in ultrahigh-frequency silane"], "weko_shared_id": -1}
Plasma diagnostics and low-temperature deposition of microcrystalline silicon films in ultrahigh-frequency silane
http://hdl.handle.net/2237/7034
http://hdl.handle.net/2237/7034fdbb8d92-21fd-4083-b635-85e77312cc76
名前 / ファイル | ライセンス | アクション |
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JApplPhys_88_576.pdf (189.5 kB)
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2006-10-24 | |||||
タイトル | ||||||
タイトル | Plasma diagnostics and low-temperature deposition of microcrystalline silicon films in ultrahigh-frequency silane | |||||
言語 | en | |||||
著者 |
Sumiya, Shigeaki
× Sumiya, Shigeaki× Mizutani, Yuko× Yoshida, Ryohei× Hori, Masaru× Goto, Toshio× Ito, Masafumi× Tsukada, Tsutomu× Samukawa, Seiji |
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アクセス権 | ||||||
アクセス権 | open access | |||||
アクセス権URI | http://purl.org/coar/access_right/c_abf2 | |||||
権利 | ||||||
言語 | en | |||||
権利情報 | Copyright (2000) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. | |||||
抄録 | ||||||
内容記述 | Microcrystalline silicon thin films were formed on quartz substrates by ultrahigh-frequency (UHF) plasma enhanced chemical vapor deposition from a mixture of silane (SiH_4) and hydrogen (H_2) gases at low substrate temperatures (T_s). The UHF plasma was excited at a frequency of 500 MHz. The deposition rate and the crystallinity of the films were investigated as a function of H_2 dilution, total pressure, mixture ratio of SiH_4 to H_2 and T_s . A crystalline fraction of 63% with a high deposition rate of 7.7 Å/s was obtained even at a T_s of 100 ℃. At a temperature of 300 ℃, a crystalline fraction of approximately 86% was achieved at a deposition rate of 1.4 Å/s. Diagnostics of the UHF plasma have been carried out using a Langmuir probe, ultraviolet absorption spectroscopy, and optical emission spectroscopy. Good crystallinity was explained by the balance of the sheath voltage and atomic hydrogen densities in the UHF plasma. Namely, the UHF plasma source achieving a high density plasma with a low electron temperature enabled us to reduce the ion bombardment energy incident on the substrates while maintaiing a high density of hydrogen atoms, and which improved the crystallinity at low T_s. | |||||
言語 | en | |||||
内容記述タイプ | Abstract | |||||
出版者 | ||||||
言語 | en | |||||
出版者 | American Institute of Physics | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプresource | http://purl.org/coar/resource_type/c_6501 | |||||
タイプ | journal article | |||||
出版タイプ | ||||||
出版タイプ | VoR | |||||
出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
DOI | ||||||
関連タイプ | isVersionOf | |||||
識別子タイプ | DOI | |||||
関連識別子 | https://doi.org/10.1063/1.373698 | |||||
ISSN | ||||||
収録物識別子タイプ | PISSN | |||||
収録物識別子 | 0021-8979 | |||||
書誌情報 |
en : Journal of Applied Physics 巻 88, 号 1, p. 576-581, 発行日 2000-07-01 |
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フォーマット | ||||||
application/pdf | ||||||
著者版フラグ | ||||||
値 | publisher | |||||
URI | ||||||
識別子 | http://hdl.handle.net/2237/7034 | |||||
識別子タイプ | HDL |