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  1. B200 工学部/工学研究科
  2. B200a 雑誌掲載論文
  3. 学術雑誌

Plasma diagnostics and low-temperature deposition of microcrystalline silicon films in ultrahigh-frequency silane

http://hdl.handle.net/2237/7034
fdbb8d92-21fd-4083-b635-85e77312cc76
名前 / ファイル ライセンス アクション
JApplPhys_88_576.pdf JApplPhys_88_576.pdf (189.5 kB)
Item type 学術雑誌論文 / Journal Article(1)
公開日 2006-10-24
タイトル
タイトル Plasma diagnostics and low-temperature deposition of microcrystalline silicon films in ultrahigh-frequency silane
著者 Sumiya, Shigeaki

× Sumiya, Shigeaki

WEKO 13929

Sumiya, Shigeaki

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Mizutani, Yuko

× Mizutani, Yuko

WEKO 13930

Mizutani, Yuko

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Yoshida, Ryohei

× Yoshida, Ryohei

WEKO 13931

Yoshida, Ryohei

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Hori, Masaru

× Hori, Masaru

WEKO 13932

Hori, Masaru

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Goto, Toshio

× Goto, Toshio

WEKO 13933

Goto, Toshio

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Ito, Masafumi

× Ito, Masafumi

WEKO 13934

Ito, Masafumi

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Tsukada, Tsutomu

× Tsukada, Tsutomu

WEKO 13935

Tsukada, Tsutomu

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Samukawa, Seiji

× Samukawa, Seiji

WEKO 13936

Samukawa, Seiji

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権利
権利情報 Copyright (2000) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
抄録
内容記述 Microcrystalline silicon thin films were formed on quartz substrates by ultrahigh-frequency (UHF) plasma enhanced chemical vapor deposition from a mixture of silane (SiH_4) and hydrogen (H_2) gases at low substrate temperatures (T_s). The UHF plasma was excited at a frequency of 500 MHz. The deposition rate and the crystallinity of the films were investigated as a function of H_2 dilution, total pressure, mixture ratio of SiH_4 to H_2 and T_s . A crystalline fraction of 63% with a high deposition rate of 7.7 Å/s was obtained even at a T_s of 100 ℃. At a temperature of 300 ℃, a crystalline fraction of approximately 86% was achieved at a deposition rate of 1.4 Å/s. Diagnostics of the UHF plasma have been carried out using a Langmuir probe, ultraviolet absorption spectroscopy, and optical emission spectroscopy. Good crystallinity was explained by the balance of the sheath voltage and atomic hydrogen densities in the UHF plasma. Namely, the UHF plasma source achieving a high density plasma with a low electron temperature enabled us to reduce the ion bombardment energy incident on the substrates while maintaiing a high density of hydrogen atoms, and which improved the crystallinity at low T_s.
内容記述タイプ Abstract
出版者
出版者 American Institute of Physics
言語
言語 eng
資源タイプ
資源タイプresource http://purl.org/coar/resource_type/c_6501
タイプ journal article
DOI
関連識別子
識別子タイプ DOI
関連識別子 http://dx.doi.org/10.1063/1.373698
ISSN
収録物識別子タイプ ISSN
収録物識別子 0021-8979
書誌情報 Journal of Applied Physics

巻 88, 号 1, p. 576-581, 発行日 2000-07-01
フォーマット
application/pdf
著者版フラグ
値 publisher
URI
識別子 http://hdl.handle.net/2237/7034
識別子タイプ HDL
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