{"_buckets": {"deposit": "7221b63e-ab0a-4a47-8b7e-c907d77ef9e3"}, "_deposit": {"id": "5437", "owners": [], "pid": {"revision_id": 0, "type": "depid", "value": "5437"}, "status": "published"}, "_oai": {"id": "oai:nagoya.repo.nii.ac.jp:00005437", "sets": ["322"]}, "author_link": ["13962", "13963", "13964", "13965", "13966"], "item_10_biblio_info_6": {"attribute_name": "書誌情報", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2002-03-01", "bibliographicIssueDateType": "Issued"}, "bibliographicIssueNumber": "5", "bibliographicPageEnd": "2621", "bibliographicPageStart": "2615", "bibliographicVolumeNumber": "91", "bibliographic_titles": [{"bibliographic_title": "Journal of Applied Physics", "bibliographic_titleLang": "en"}]}]}, "item_10_description_4": {"attribute_name": "抄録", "attribute_value_mlt": [{"subitem_description": "An organic film, FLARE™, is one of the most prospective candidates for interlayer insulating films with low dielectric constants (low k). This organic low k film was etched in inductively coupled high-density plasmas employing N_2/H_2and N_2/NH_3 gases. By changing the mixing ratio of these gases, the anisotropic etching profile was obtained. The etching plasmas were evaluated by quadruple mass spectroscopy and the vacuum ultraviolet absorption spectroscopy employing microplasma as a light source. N and H radical densities were estimated on the order of 10^11–10^12 cm^-3and 10^12–10^13 cm^-3, respectively. The behavior of etch rate corresponded well to that of H radical density. H radicals were found to be important species for organic low k film etching, while N radicals could not etch without ion bombardments. On the other hand, N radicals were found to be effective for the formation of protection layer on the sidewall against the etching by the H radicals. The ratio of H and N radical densities would be important for the etching of organic low k film employing N–H plasmas.", "subitem_description_language": "en", "subitem_description_type": "Abstract"}]}, "item_10_identifier_60": {"attribute_name": "URI", "attribute_value_mlt": [{"subitem_identifier_type": "HDL", "subitem_identifier_uri": "http://hdl.handle.net/2237/7041"}]}, "item_10_publisher_32": {"attribute_name": "出版者", "attribute_value_mlt": [{"subitem_publisher": "American Institute of Physics", "subitem_publisher_language": "en"}]}, "item_10_relation_11": {"attribute_name": "DOI", "attribute_value_mlt": [{"subitem_relation_type": "isVersionOf", "subitem_relation_type_id": {"subitem_relation_type_id_text": "https://doi.org/10.1063/1.1435825", "subitem_relation_type_select": "DOI"}}]}, "item_10_rights_12": {"attribute_name": "権利", "attribute_value_mlt": [{"subitem_rights": "Copyright (2002) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.", "subitem_rights_language": "en"}]}, "item_10_select_15": {"attribute_name": "著者版フラグ", "attribute_value_mlt": [{"subitem_select_item": "publisher"}]}, "item_10_source_id_7": {"attribute_name": "ISSN", "attribute_value_mlt": [{"subitem_source_identifier": "0021-8979", "subitem_source_identifier_type": "PISSN"}]}, "item_10_text_14": {"attribute_name": "フォーマット", "attribute_value_mlt": [{"subitem_text_value": "application/pdf"}]}, "item_1615787544753": {"attribute_name": "出版タイプ", "attribute_value_mlt": [{"subitem_version_resource": "http://purl.org/coar/version/c_970fb48d4fbd8a85", "subitem_version_type": "VoR"}]}, "item_access_right": {"attribute_name": "アクセス権", "attribute_value_mlt": [{"subitem_access_right": "open access", "subitem_access_right_uri": "http://purl.org/coar/access_right/c_abf2"}]}, "item_creator": {"attribute_name": "著者", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "Nagai, Hisao", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "13962", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Takashima, Seigou", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "13963", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Hiramatsu, Mineo", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "13964", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Hori, Masaru", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "13965", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Goto, Toshio", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "13966", "nameIdentifierScheme": "WEKO"}]}]}, "item_files": {"attribute_name": "ファイル情報", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2018-02-19"}], "displaytype": "detail", "download_preview_message": "", "file_order": 0, "filename": "JApplPhys_91_2615.pdf", "filesize": [{"value": "426.8 kB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "licensetype": "license_note", "mimetype": "application/pdf", "size": 426800.0, "url": {"label": "JApplPhys_91_2615.pdf", "objectType": "fulltext", "url": "https://nagoya.repo.nii.ac.jp/record/5437/files/JApplPhys_91_2615.pdf"}, "version_id": "586ef0f6-5971-4f24-a275-43416a0cf032"}]}, "item_language": {"attribute_name": "言語", "attribute_value_mlt": [{"subitem_language": "eng"}]}, "item_resource_type": {"attribute_name": "資源タイプ", "attribute_value_mlt": [{"resourcetype": "journal article", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "Behavior of atomic radicals and their effects on organic low dielectric constant film etching in high density N_2/H_2 and N_2/NH_3 plasmas", "item_titles": {"attribute_name": "タイトル", "attribute_value_mlt": [{"subitem_title": "Behavior of atomic radicals and their effects on organic low dielectric constant film etching in high density N_2/H_2 and N_2/NH_3 plasmas", "subitem_title_language": "en"}]}, "item_type_id": "10", "owner": "1", "path": ["322"], "permalink_uri": "http://hdl.handle.net/2237/7041", "pubdate": {"attribute_name": "PubDate", "attribute_value": "2006-10-24"}, "publish_date": "2006-10-24", "publish_status": "0", "recid": "5437", "relation": {}, "relation_version_is_last": true, "title": ["Behavior of atomic radicals and their effects on organic low dielectric constant film etching in high density N_2/H_2 and N_2/NH_3 plasmas"], "weko_shared_id": -1}