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  1. B200 工学部/工学研究科
  2. B200a 雑誌掲載論文
  3. 学術雑誌

Behavior of atomic radicals and their effects on organic low dielectric constant film etching in high density N_2/H_2 and N_2/NH_3 plasmas

http://hdl.handle.net/2237/7041
http://hdl.handle.net/2237/7041
b85f14b4-ef6d-4f63-bfde-e0fc791e3423
名前 / ファイル ライセンス アクション
JApplPhys_91_2615.pdf JApplPhys_91_2615.pdf (426.8 kB)
Item type 学術雑誌論文 / Journal Article(1)
公開日 2006-10-24
タイトル
タイトル Behavior of atomic radicals and their effects on organic low dielectric constant film etching in high density N_2/H_2 and N_2/NH_3 plasmas
言語 en
著者 Nagai, Hisao

× Nagai, Hisao

WEKO 13962

en Nagai, Hisao

Search repository
Takashima, Seigou

× Takashima, Seigou

WEKO 13963

en Takashima, Seigou

Search repository
Hiramatsu, Mineo

× Hiramatsu, Mineo

WEKO 13964

en Hiramatsu, Mineo

Search repository
Hori, Masaru

× Hori, Masaru

WEKO 13965

en Hori, Masaru

Search repository
Goto, Toshio

× Goto, Toshio

WEKO 13966

en Goto, Toshio

Search repository
アクセス権
アクセス権 open access
アクセス権URI http://purl.org/coar/access_right/c_abf2
権利
言語 en
権利情報 Copyright (2002) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
抄録
内容記述 An organic film, FLARE™, is one of the most prospective candidates for interlayer insulating films with low dielectric constants (low k). This organic low k film was etched in inductively coupled high-density plasmas employing N_2/H_2and N_2/NH_3 gases. By changing the mixing ratio of these gases, the anisotropic etching profile was obtained. The etching plasmas were evaluated by quadruple mass spectroscopy and the vacuum ultraviolet absorption spectroscopy employing microplasma as a light source. N and H radical densities were estimated on the order of 10^11–10^12 cm^-3and 10^12–10^13 cm^-3, respectively. The behavior of etch rate corresponded well to that of H radical density. H radicals were found to be important species for organic low k film etching, while N radicals could not etch without ion bombardments. On the other hand, N radicals were found to be effective for the formation of protection layer on the sidewall against the etching by the H radicals. The ratio of H and N radical densities would be important for the etching of organic low k film employing N–H plasmas.
言語 en
内容記述タイプ Abstract
出版者
言語 en
出版者 American Institute of Physics
言語
言語 eng
資源タイプ
資源タイプresource http://purl.org/coar/resource_type/c_6501
タイプ journal article
出版タイプ
出版タイプ VoR
出版タイプResource http://purl.org/coar/version/c_970fb48d4fbd8a85
DOI
関連タイプ isVersionOf
識別子タイプ DOI
関連識別子 https://doi.org/10.1063/1.1435825
ISSN
収録物識別子タイプ PISSN
収録物識別子 0021-8979
書誌情報 en : Journal of Applied Physics

巻 91, 号 5, p. 2615-2621, 発行日 2002-03-01
フォーマット
application/pdf
著者版フラグ
値 publisher
URI
識別子 http://hdl.handle.net/2237/7041
識別子タイプ HDL
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