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{"_buckets": {"deposit": "9d63cf58-ba5b-42df-8955-fe4c4791cdf7"}, "_deposit": {"id": "5443", "owners": [], "pid": {"revision_id": 0, "type": "depid", "value": "5443"}, "status": "published"}, "_oai": {"id": "oai:nagoya.repo.nii.ac.jp:00005443", "sets": ["322"]}, "author_link": ["13990", "13991", "13992", "13993"], "item_10_biblio_info_6": {"attribute_name": "書誌情報", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2003-08-01", "bibliographicIssueDateType": "Issued"}, "bibliographicIssueNumber": "3", "bibliographicPageEnd": "1367", "bibliographicPageStart": "1362", "bibliographicVolumeNumber": "94", "bibliographic_titles": [{"bibliographic_title": "Journal of Applied Physics", "bibliographic_titleLang": "en"}]}]}, "item_10_description_4": {"attribute_name": "抄録", "attribute_value_mlt": [{"subitem_description": "The behavior of species in the gas phase and their effects on the etching characteristics of organic film with the lower dielectric constant (low-k) were investigated in 500 MHz ultrahigh frequency (UHF) plasma using N_2 /H_2 and N_2 /NH_3 gases. The absolute H and N radical densities and NH_3 molecule density in etching plasmas were evaluated by the vacuum ultraviolet absorption spectroscopy and the infrared diode laser absorption spectroscopy technique, respectively. The effects of frequency that excited the plasma in the production of H and N radicals were clarified by comparing the behavior of radicals in the UHF plasma with that in the inductively coupled plasma (ICP) exciting at the frequency of 13.56 MHz reported in the previous study. H radicals were produced more efficiently from NH_3 gas and N radicals more efficiently from N_2 gas in the UHF plasma than in the ICP. H radicals were generated not only through the dissociation of the H_2 molecule but also from NH_3 molecules produced in the N_2 /H_2 plasma. On the other hand, the N radical density was lower by one order of magnitude than the H radical density, and was seldom produced from the NH_3 molecule. It was found that the etch rate and etched profile could be controlled with an internal plasma parameter of the ratio of the H and N radical densities under the constant electron density in the plasma gas chemistry of both N_2 /H_2 and N_2 /NH_3 . The optimal conditions for the anisotropic profile and high etch rate were well determined by the ratio of the H and N radical densities and the substrate temperature. The results of this study are very useful not only for understanding the fundamental process of organic low-k film etching but also for precisely controlling the etching process.", "subitem_description_language": "en", "subitem_description_type": "Abstract"}]}, "item_10_identifier_60": {"attribute_name": "URI", "attribute_value_mlt": [{"subitem_identifier_type": "HDL", "subitem_identifier_uri": "http://hdl.handle.net/2237/7047"}]}, "item_10_publisher_32": {"attribute_name": "出版者", "attribute_value_mlt": [{"subitem_publisher": "American Institute of Physics", "subitem_publisher_language": "en"}]}, "item_10_relation_11": {"attribute_name": "DOI", "attribute_value_mlt": [{"subitem_relation_type": "isVersionOf", "subitem_relation_type_id": {"subitem_relation_type_id_text": "https://doi.org/10.1063/1.1588351", "subitem_relation_type_select": "DOI"}}]}, "item_10_rights_12": {"attribute_name": "権利", "attribute_value_mlt": [{"subitem_rights": "Copyright (2003) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.", "subitem_rights_language": "en"}]}, "item_10_select_15": {"attribute_name": "著者版フラグ", "attribute_value_mlt": [{"subitem_select_item": "publisher"}]}, "item_10_source_id_7": {"attribute_name": "ISSN", "attribute_value_mlt": [{"subitem_source_identifier": "0021-8979", "subitem_source_identifier_type": "PISSN"}]}, "item_10_text_14": {"attribute_name": "フォーマット", "attribute_value_mlt": [{"subitem_text_value": "application/pdf"}]}, "item_1615787544753": {"attribute_name": "出版タイプ", "attribute_value_mlt": [{"subitem_version_resource": "http://purl.org/coar/version/c_970fb48d4fbd8a85", "subitem_version_type": "VoR"}]}, "item_access_right": {"attribute_name": "アクセス権", "attribute_value_mlt": [{"subitem_access_right": "open access", "subitem_access_right_uri": "http://purl.org/coar/access_right/c_abf2"}]}, "item_creator": {"attribute_name": "著者", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "Nagai, Hisao", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "13990", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Hiramatsu, Mineo", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "13991", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Hori, Masaru", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "13992", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Goto, Toshio", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "13993", "nameIdentifierScheme": "WEKO"}]}]}, "item_files": {"attribute_name": "ファイル情報", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2018-02-19"}], "displaytype": "detail", "download_preview_message": "", "file_order": 0, "filename": "JApplPhys_94_1362.pdf", "filesize": [{"value": "283.7 kB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "licensetype": "license_note", "mimetype": "application/pdf", "size": 283700.0, "url": {"label": "JApplPhys_94_1362.pdf", "objectType": "fulltext", "url": "https://nagoya.repo.nii.ac.jp/record/5443/files/JApplPhys_94_1362.pdf"}, "version_id": "c70f7608-68fb-433e-9386-150bdde38a8c"}]}, "item_language": {"attribute_name": "言語", "attribute_value_mlt": [{"subitem_language": "eng"}]}, "item_resource_type": {"attribute_name": "資源タイプ", "attribute_value_mlt": [{"resourcetype": "journal article", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "Etching organic low dielectric film in ultrahigh frequency plasma using N_2/H_2 and N_2/NH_3 gases", "item_titles": {"attribute_name": "タイトル", "attribute_value_mlt": [{"subitem_title": "Etching organic low dielectric film in ultrahigh frequency plasma using N_2/H_2 and N_2/NH_3 gases", "subitem_title_language": "en"}]}, "item_type_id": "10", "owner": "1", "path": ["322"], "permalink_uri": "http://hdl.handle.net/2237/7047", "pubdate": {"attribute_name": "PubDate", "attribute_value": "2006-10-24"}, "publish_date": "2006-10-24", "publish_status": "0", "recid": "5443", "relation": {}, "relation_version_is_last": true, "title": ["Etching organic low dielectric film in ultrahigh frequency plasma using N_2/H_2 and N_2/NH_3 gases"], "weko_shared_id": -1}
  1. B200 工学部/工学研究科
  2. B200a 雑誌掲載論文
  3. 学術雑誌

Etching organic low dielectric film in ultrahigh frequency plasma using N_2/H_2 and N_2/NH_3 gases

http://hdl.handle.net/2237/7047
http://hdl.handle.net/2237/7047
4fed174b-d5b0-4a07-bd39-a62f6c2831fc
名前 / ファイル ライセンス アクション
JApplPhys_94_1362.pdf JApplPhys_94_1362.pdf (283.7 kB)
Item type 学術雑誌論文 / Journal Article(1)
公開日 2006-10-24
タイトル
タイトル Etching organic low dielectric film in ultrahigh frequency plasma using N_2/H_2 and N_2/NH_3 gases
言語 en
著者 Nagai, Hisao

× Nagai, Hisao

WEKO 13990

en Nagai, Hisao

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Hiramatsu, Mineo

× Hiramatsu, Mineo

WEKO 13991

en Hiramatsu, Mineo

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Hori, Masaru

× Hori, Masaru

WEKO 13992

en Hori, Masaru

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Goto, Toshio

× Goto, Toshio

WEKO 13993

en Goto, Toshio

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アクセス権
アクセス権 open access
アクセス権URI http://purl.org/coar/access_right/c_abf2
権利
言語 en
権利情報 Copyright (2003) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
抄録
内容記述 The behavior of species in the gas phase and their effects on the etching characteristics of organic film with the lower dielectric constant (low-k) were investigated in 500 MHz ultrahigh frequency (UHF) plasma using N_2 /H_2 and N_2 /NH_3 gases. The absolute H and N radical densities and NH_3 molecule density in etching plasmas were evaluated by the vacuum ultraviolet absorption spectroscopy and the infrared diode laser absorption spectroscopy technique, respectively. The effects of frequency that excited the plasma in the production of H and N radicals were clarified by comparing the behavior of radicals in the UHF plasma with that in the inductively coupled plasma (ICP) exciting at the frequency of 13.56 MHz reported in the previous study. H radicals were produced more efficiently from NH_3 gas and N radicals more efficiently from N_2 gas in the UHF plasma than in the ICP. H radicals were generated not only through the dissociation of the H_2 molecule but also from NH_3 molecules produced in the N_2 /H_2 plasma. On the other hand, the N radical density was lower by one order of magnitude than the H radical density, and was seldom produced from the NH_3 molecule. It was found that the etch rate and etched profile could be controlled with an internal plasma parameter of the ratio of the H and N radical densities under the constant electron density in the plasma gas chemistry of both N_2 /H_2 and N_2 /NH_3 . The optimal conditions for the anisotropic profile and high etch rate were well determined by the ratio of the H and N radical densities and the substrate temperature. The results of this study are very useful not only for understanding the fundamental process of organic low-k film etching but also for precisely controlling the etching process.
言語 en
内容記述タイプ Abstract
出版者
言語 en
出版者 American Institute of Physics
言語
言語 eng
資源タイプ
資源タイプresource http://purl.org/coar/resource_type/c_6501
タイプ journal article
出版タイプ
出版タイプ VoR
出版タイプResource http://purl.org/coar/version/c_970fb48d4fbd8a85
DOI
関連タイプ isVersionOf
識別子タイプ DOI
関連識別子 https://doi.org/10.1063/1.1588351
ISSN
収録物識別子タイプ PISSN
収録物識別子 0021-8979
書誌情報 en : Journal of Applied Physics

巻 94, 号 3, p. 1362-1367, 発行日 2003-08-01
フォーマット
application/pdf
著者版フラグ
値 publisher
URI
識別子 http://hdl.handle.net/2237/7047
識別子タイプ HDL
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