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  1. B200 工学部/工学研究科
  2. B200a 雑誌掲載論文
  3. 学術雑誌

First-principles calculations of Cu adsorption on an H-terminated Si surface

http://hdl.handle.net/2237/11269
http://hdl.handle.net/2237/11269
e9be2f70-98b0-4f13-afb4-2d58e4ff4f42
名前 / ファイル ライセンス アクション
Sato_PhysRevB_76_075315.pdf Sato_PhysRevB_76_075315.pdf (1.5 MB)
Item type 学術雑誌論文 / Journal Article(1)
公開日 2009-03-09
タイトル
タイトル First-principles calculations of Cu adsorption on an H-terminated Si surface
言語 en
著者 Foster, A. S.

× Foster, A. S.

WEKO 27013

en Foster, A. S.

Search repository
Gosálvez, M. A.

× Gosálvez, M. A.

WEKO 27014

en Gosálvez, M. A.

Search repository
Hynninen, T.

× Hynninen, T.

WEKO 27015

en Hynninen, T.

Search repository
Nieminen, R. M.

× Nieminen, R. M.

WEKO 27016

en Nieminen, R. M.

Search repository
Sato, K.

× Sato, K.

WEKO 27017

en Sato, K.

Search repository
アクセス権
アクセス権 open access
アクセス権URI http://purl.org/coar/access_right/c_abf2
権利
言語 en
権利情報 Copyright: American Physical Society, All rights reserved.
キーワード
主題Scheme Other
主題 ab initio calculations
キーワード
主題Scheme Other
主題 adsorption, copper
キーワード
主題Scheme Other
主題 elemental semiconductors
キーワード
主題Scheme Other
主題 hydrogen, silicon
抄録
内容記述 In this study, we use first-principles simulations to study the adsorption of copper onto H-terminated and partially OH-terminated silicon surfaces. We show that, in contrast to previous studies, copper adsorbs strongly to the H-terminated silicon surface and that the adsorption energy is significantly dependent on the localbonding environment. The addition of a hydroxide group increases the average adsorption energy while reducing the range of adsorption energies due to the strong interaction between copper and oxygen. Our results predict that copper will generally prefer to adsorb at dihydride sites on the surface, agreeing with experimentalstudies of copper nucleation. The adsorption energy hierarchy predicted by the calculations strongly supports the suggestion that copper acts as a micromask in wet chemical etching, blocking reactive sites.
言語 en
内容記述タイプ Abstract
出版者
言語 en
出版者 American Physical Society
言語
言語 eng
資源タイプ
資源タイプresource http://purl.org/coar/resource_type/c_6501
タイプ journal article
出版タイプ
出版タイプ VoR
出版タイプResource http://purl.org/coar/version/c_970fb48d4fbd8a85
DOI
関連タイプ isVersionOf
識別子タイプ DOI
関連識別子 https://doi.org/10.1103/PhysRevB.76.075315
ISSN
収録物識別子タイプ PISSN
収録物識別子 1098-0121
書誌情報 en : PHYSICAL REVIEW B

巻 76, 号 7, p. 075315-075315, 発行日 2007-08
フォーマット
application/pdf
著者版フラグ
値 publisher
URI
識別子 http://hdl.handle.net/2237/11269
識別子タイプ HDL
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