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MnGa (001)-Textured Film Fabricated on Thermally Oxidized Si Substrate for Application to Ion Beam Bit Patterned Media
http://hdl.handle.net/2237/00030820
http://hdl.handle.net/2237/000308209bc549d0-218f-448c-9060-a5e8dd6f3ee9
名前 / ファイル | ライセンス | アクション |
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Manuscript_MMM-Intermag_2019_final_submit_compressed (448.3 kB)
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2019-10-18 | |||||
タイトル | ||||||
タイトル | MnGa (001)-Textured Film Fabricated on Thermally Oxidized Si Substrate for Application to Ion Beam Bit Patterned Media | |||||
言語 | en | |||||
著者 |
Ishikawa, Toru
× Ishikawa, Toru× Miwa, Yoshitsugu× Oshima, Daiki× Kato, Takeshi× Iwata, Satoshi× 石川, 徹× 三輪, 佳嗣× 大島, 大輝× 加藤, 剛志× 岩田, 聡 |
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アクセス権 | ||||||
アクセス権 | open access | |||||
アクセス権URI | http://purl.org/coar/access_right/c_abf2 | |||||
権利 | ||||||
言語 | en | |||||
権利情報 | “© 2019 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.” | |||||
抄録 | ||||||
内容記述 | (001)-oriented MnGa films were grown on thermally oxidized Si substrates, and ion-beam patterned films using the MnGa grown on Si substrates were fabricated. The buffer layer of Cr (20 nm)/MgO (5 nm)/CrB (5 nm)/NiTa (25 nm) was used, and highly (001)oriented and flat Cr buffer layer was obtained by high-temperature annealing of 800 °C. The large saturation magnetization Ms of 0.58 T, which is 74% of that of the epitaxial MnGa grown on MgO (001) substrate, was confirmed by growing the MnGa on the Cr buffer layer. As well as the large Ms, the MnGa on Si substrate exhibited a large perpendicular anisotropy. By using the (001)-oriented MnGa on Si substrate, ion-beam patterned structures whose pitch sizes down to 100 nm, corresponding to the areal density of 65 Gb/in 2 were obtained. These results indicate that low-cost and high-density bit patterned media (BPM) were fabricated by the ion irradiation on MnGa grown on Si substrate. Furthermore, improvement of the crystal orientation of the buffer layer will be necessary to realize the MnGa BPM with the areal density of 1 Tb/in 2 and more. | |||||
言語 | en | |||||
内容記述タイプ | Abstract | |||||
出版者 | ||||||
言語 | en | |||||
出版者 | IEEE | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプresource | http://purl.org/coar/resource_type/c_6501 | |||||
タイプ | journal article | |||||
出版タイプ | ||||||
出版タイプ | AM | |||||
出版タイプResource | http://purl.org/coar/version/c_ab4af688f83e57aa | |||||
DOI | ||||||
関連タイプ | isVersionOf | |||||
識別子タイプ | DOI | |||||
関連識別子 | https://doi.org/10.1109/TMAG.2018.2889499 | |||||
ISSN(print) | ||||||
収録物識別子タイプ | PISSN | |||||
収録物識別子 | 0018-9464 | |||||
ISSN(Online) | ||||||
収録物識別子タイプ | EISSN | |||||
収録物識別子 | 1941-0069 | |||||
書誌情報 |
en : IEEE Transactions on Magnetics 巻 55, 号 7, p. 3200104, 発行日 2019-07 |
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著者版フラグ | ||||||
値 | author |