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  1. F200 未来材料・システム研究所
  2. F200a 雑誌掲載論文
  3. 学術雑誌

MnGa (001)-Textured Film Fabricated on Thermally Oxidized Si Substrate for Application to Ion Beam Bit Patterned Media

http://hdl.handle.net/2237/00030820
http://hdl.handle.net/2237/00030820
9bc549d0-218f-448c-9060-a5e8dd6f3ee9
名前 / ファイル ライセンス アクション
Manuscript_MMM-Intermag_2019_final_submit_compressed.pdf Manuscript_MMM-Intermag_2019_final_submit_compressed (448.3 kB)
Item type 学術雑誌論文 / Journal Article(1)
公開日 2019-10-18
タイトル
タイトル MnGa (001)-Textured Film Fabricated on Thermally Oxidized Si Substrate for Application to Ion Beam Bit Patterned Media
言語 en
著者 Ishikawa, Toru

× Ishikawa, Toru

WEKO 93786

en Ishikawa, Toru

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Miwa, Yoshitsugu

× Miwa, Yoshitsugu

WEKO 93787

en Miwa, Yoshitsugu

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Oshima, Daiki

× Oshima, Daiki

WEKO 93788

en Oshima, Daiki

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Kato, Takeshi

× Kato, Takeshi

WEKO 93789

en Kato, Takeshi

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Iwata, Satoshi

× Iwata, Satoshi

WEKO 93790

en Iwata, Satoshi

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石川, 徹

× 石川, 徹

WEKO 93791

ja 石川, 徹

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三輪, 佳嗣

× 三輪, 佳嗣

WEKO 93792

ja 三輪, 佳嗣

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大島, 大輝

× 大島, 大輝

WEKO 93793

ja 大島, 大輝

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加藤, 剛志

× 加藤, 剛志

WEKO 93794

ja 加藤, 剛志

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岩田, 聡

× 岩田, 聡

WEKO 93795

ja 岩田, 聡

Search repository
アクセス権
アクセス権 open access
アクセス権URI http://purl.org/coar/access_right/c_abf2
権利
言語 en
権利情報 “© 2019 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.”
抄録
内容記述 (001)-oriented MnGa films were grown on thermally oxidized Si substrates, and ion-beam patterned films using the MnGa grown on Si substrates were fabricated. The buffer layer of Cr (20 nm)/MgO (5 nm)/CrB (5 nm)/NiTa (25 nm) was used, and highly (001)oriented and flat Cr buffer layer was obtained by high-temperature annealing of 800 °C. The large saturation magnetization Ms of 0.58 T, which is 74% of that of the epitaxial MnGa grown on MgO (001) substrate, was confirmed by growing the MnGa on the Cr buffer layer. As well as the large Ms, the MnGa on Si substrate exhibited a large perpendicular anisotropy. By using the (001)-oriented MnGa on Si substrate, ion-beam patterned structures whose pitch sizes down to 100 nm, corresponding to the areal density of 65 Gb/in 2 were obtained. These results indicate that low-cost and high-density bit patterned media (BPM) were fabricated by the ion irradiation on MnGa grown on Si substrate. Furthermore, improvement of the crystal orientation of the buffer layer will be necessary to realize the MnGa BPM with the areal density of 1 Tb/in 2 and more.
言語 en
内容記述タイプ Abstract
出版者
言語 en
出版者 IEEE
言語
言語 eng
資源タイプ
資源タイプresource http://purl.org/coar/resource_type/c_6501
タイプ journal article
出版タイプ
出版タイプ AM
出版タイプResource http://purl.org/coar/version/c_ab4af688f83e57aa
DOI
関連タイプ isVersionOf
識別子タイプ DOI
関連識別子 https://doi.org/10.1109/TMAG.2018.2889499
ISSN(print)
収録物識別子タイプ PISSN
収録物識別子 0018-9464
ISSN(Online)
収録物識別子タイプ EISSN
収録物識別子 1941-0069
書誌情報 en : IEEE Transactions on Magnetics

巻 55, 号 7, p. 3200104, 発行日 2019-07
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