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Noncontact inspection technique for electrical failures in semiconductor devices using a laser terahertz emission microscope
http://hdl.handle.net/2237/11979
http://hdl.handle.net/2237/119794bcc6808-d909-4c2a-baf1-2b8102c20318
名前 / ファイル | ライセンス | アクション |
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2009-07-28 | |||||
タイトル | ||||||
タイトル | Noncontact inspection technique for electrical failures in semiconductor devices using a laser terahertz emission microscope | |||||
言語 | en | |||||
著者 |
Yamashita, Masatsugu
× Yamashita, Masatsugu× Otani, Chiko× Kawase, Kodo× Nikawa, Kiyoshi× Tonouchi, Masayoshi |
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アクセス権 | ||||||
アクセス権 | open access | |||||
アクセス権URI | http://purl.org/coar/access_right/c_abf2 | |||||
権利 | ||||||
言語 | en | |||||
権利情報 | Copyright (2008) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. | |||||
抄録 | ||||||
内容記述 | We have proposed and demonstrated a novel technique for the noncontact inspection of electrical failures in semiconductor devices using a laser terahertz emission microscope. It was found that the waveforms of the terahertz pulses, emitted by exciting p-n junctions in semiconductor circuits with focused ultrafast laser pulses, depend on the interconnection structures of the circuits. We successfully distinguished damaged silicon metal-oxide-semiconductor field effect transistor circuits with disconnected wires from normal ones by comparing the images of terahertz emission amplitudes between a normal chip and a defective one. | |||||
言語 | en | |||||
内容記述タイプ | Abstract | |||||
出版者 | ||||||
言語 | en | |||||
出版者 | American Institite of Physics | |||||
言語 | ||||||
言語 | eng | |||||
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資源タイプresource | http://purl.org/coar/resource_type/c_6501 | |||||
タイプ | journal article | |||||
出版タイプ | ||||||
出版タイプ | VoR | |||||
出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
DOI | ||||||
関連タイプ | isVersionOf | |||||
識別子タイプ | DOI | |||||
関連識別子 | https://doi.org/10.1063/1.2965810 | |||||
ISSN | ||||||
収録物識別子タイプ | PISSN | |||||
収録物識別子 | 0003-6951 | |||||
書誌情報 |
en : APPLIED PHYSICS LETTERS 巻 93, p. 041117-041117, 発行日 2008-07-31 |
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application/pdf | ||||||
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値 | publisher | |||||
URI | ||||||
識別子 | http://dx.doi.org/10.1063/1.2965810 | |||||
識別子タイプ | DOI | |||||
URI | ||||||
識別子 | http://hdl.handle.net/2237/11979 | |||||
識別子タイプ | HDL |