{"_buckets": {"deposit": "9e529bfd-2ec4-4670-a295-f8a5c6a07d94"}, "_deposit": {"id": "10163", "owners": [], "pid": {"revision_id": 0, "type": "depid", "value": "10163"}, "status": "published"}, "_oai": {"id": "oai:nagoya.repo.nii.ac.jp:00010163"}, "item_10_biblio_info_6": {"attribute_name": "\u66f8\u8a8c\u60c5\u5831", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2007-07-02", "bibliographicIssueDateType": "Issued"}, "bibliographicPageEnd": "012104", "bibliographicPageStart": "012104", "bibliographicVolumeNumber": "91", "bibliographic_titles": [{"bibliographic_title": "APPLIED PHYSICS LETTERS"}]}]}, "item_10_description_4": {"attribute_name": "\u6284\u9332", "attribute_value_mlt": [{"subitem_description": "The high density hole doping (1.7\u00d710^21cm^{\u22123}) for a wide gap (Eg=\u30302.8 eV) p-type semiconductor was achieved on 40nm thick Mg-doped LaCuOSe epitaxial films. These films exhibited distinct free carrier absorption, and the effective mass and momentum relaxation time were analyzed. Its small hole mobility [\u30303.5cm^2/(V s)] compared to the electron mobilities of wide gap n-type semiconductors is attributed to a heavy effective mass of 1.6\u00b10.2m_e. Regardless of the heavy hole doping, a band filling effect was not observed. These results are discussed with a rigid band model and an acceptor band model.", "subitem_description_type": "Abstract"}]}, "item_10_identifier_60": {"attribute_name": "URI", "attribute_value_mlt": [{"subitem_identifier_type": "DOI", "subitem_identifier_uri": "http://dx.doi.org/10.1063/1.2753546"}, {"subitem_identifier_type": "HDL", "subitem_identifier_uri": "http://hdl.handle.net/2237/11981"}]}, "item_10_publisher_32": {"attribute_name": "\u51fa\u7248\u8005", "attribute_value_mlt": [{"subitem_publisher": "American Institite of Physics"}]}, "item_10_rights_12": {"attribute_name": "\u6a29\u5229", "attribute_value_mlt": [{"subitem_rights": "Copyright (2007) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics."}]}, "item_10_select_15": {"attribute_name": "\u8457\u8005\u7248\u30d5\u30e9\u30b0", "attribute_value_mlt": [{"subitem_select_item": "publisher"}]}, "item_10_source_id_7": {"attribute_name": "ISSN", "attribute_value_mlt": [{"subitem_source_identifier": "0003-6951", "subitem_source_identifier_type": "ISSN"}]}, "item_10_text_14": {"attribute_name": "\u30d5\u30a9\u30fc\u30de\u30c3\u30c8", "attribute_value_mlt": [{"subitem_text_value": "application/pdf"}]}, "item_creator": {"attribute_name": "\u8457\u8005", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "Hiramatsu, Hidenori"}], "nameIdentifiers": [{"nameIdentifier": "30650", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Ueda, Kazushige"}], "nameIdentifiers": [{"nameIdentifier": "30651", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Ohta, Hiromichi"}], "nameIdentifiers": [{"nameIdentifier": "30652", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Hirano, Masahiro"}], "nameIdentifiers": [{"nameIdentifier": "30653", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Kikuchi, Maiko"}], "nameIdentifiers": [{"nameIdentifier": "30654", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Yanagi, Hiroshi"}], "nameIdentifiers": [{"nameIdentifier": "30655", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Kamiya, Toshio"}], "nameIdentifiers": [{"nameIdentifier": "30656", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Hosono, Hideo"}], "nameIdentifiers": [{"nameIdentifier": "30657", "nameIdentifierScheme": "WEKO"}]}]}, "item_files": {"attribute_name": "\u30d5\u30a1\u30a4\u30eb\u60c5\u5831", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2018-02-20"}], "displaytype": "detail", "download_preview_message": "", "file_order": 0, "filename": "ApplPhysLett_91_012104.pdf", "filesize": [{"value": "299.3 kB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "licensetype": "license_free", "mimetype": "application/pdf", "size": 299300.0, "url": {"label": "ApplPhysLett_91_012104.pdf", "url": "https://nagoya.repo.nii.ac.jp/record/10163/files/ApplPhysLett_91_012104.pdf"}, "version_id": "6a6b5f31-0f22-4df8-a120-8de1361320d9"}]}, "item_language": {"attribute_name": "\u8a00\u8a9e", "attribute_value_mlt": [{"subitem_language": "eng"}]}, "item_resource_type": {"attribute_name": "\u8cc7\u6e90\u30bf\u30a4\u30d7", "attribute_value_mlt": [{"resourcetype": "journal article", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "Heavy hole doping of epitaxial thin films of a wide gap p-type semiconductor, LaCuOSe, and analysis of the effective mass", "item_titles": {"attribute_name": "\u30bf\u30a4\u30c8\u30eb", "attribute_value_mlt": [{"subitem_title": "Heavy hole doping of epitaxial thin films of a wide gap p-type semiconductor, LaCuOSe, and analysis of the effective mass"}]}, "item_type_id": "10", "owner": "1", "path": ["320/321/322"], "permalink_uri": "http://hdl.handle.net/2237/11981", "pubdate": {"attribute_name": "\u516c\u958b\u65e5", "attribute_value": "2009-07-28"}, "publish_date": "2009-07-28", "publish_status": "0", "recid": "10163", "relation": {}, "relation_version_is_last": true, "title": ["Heavy hole doping of epitaxial thin films of a wide gap p-type semiconductor, LaCuOSe, and analysis of the effective mass"], "weko_shared_id": null}