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Heavy hole doping of epitaxial thin films of a wide gap p-type semiconductor, LaCuOSe, and analysis of the effective mass
http://hdl.handle.net/2237/11981
http://hdl.handle.net/2237/1198125313f3a-cd3c-46f1-9c9f-b7b89ab152de
名前 / ファイル | ライセンス | アクション |
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ApplPhysLett_91_012104.pdf (299.3 kB)
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2009-07-28 | |||||
タイトル | ||||||
タイトル | Heavy hole doping of epitaxial thin films of a wide gap p-type semiconductor, LaCuOSe, and analysis of the effective mass | |||||
言語 | en | |||||
著者 |
Hiramatsu, Hidenori
× Hiramatsu, Hidenori× Ueda, Kazushige× Ohta, Hiromichi× Hirano, Masahiro× Kikuchi, Maiko× Yanagi, Hiroshi× Kamiya, Toshio× Hosono, Hideo |
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アクセス権 | ||||||
アクセス権 | open access | |||||
アクセス権URI | http://purl.org/coar/access_right/c_abf2 | |||||
権利 | ||||||
言語 | en | |||||
権利情報 | Copyright (2007) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. | |||||
抄録 | ||||||
内容記述 | The high density hole doping (1.7×10^21cm^{−3}) for a wide gap (Eg=〰2.8 eV) p-type semiconductor was achieved on 40nm thick Mg-doped LaCuOSe epitaxial films. These films exhibited distinct free carrier absorption, and the effective mass and momentum relaxation time were analyzed. Its small hole mobility [〰3.5cm^2/(V s)] compared to the electron mobilities of wide gap n-type semiconductors is attributed to a heavy effective mass of 1.6±0.2m_e. Regardless of the heavy hole doping, a band filling effect was not observed. These results are discussed with a rigid band model and an acceptor band model. | |||||
言語 | en | |||||
内容記述タイプ | Abstract | |||||
出版者 | ||||||
言語 | en | |||||
出版者 | American Institite of Physics | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプresource | http://purl.org/coar/resource_type/c_6501 | |||||
タイプ | journal article | |||||
出版タイプ | ||||||
出版タイプ | VoR | |||||
出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
DOI | ||||||
関連タイプ | isVersionOf | |||||
識別子タイプ | DOI | |||||
関連識別子 | https://doi.org/10.1063/1.2753546 | |||||
ISSN | ||||||
収録物識別子タイプ | PISSN | |||||
収録物識別子 | 0003-6951 | |||||
書誌情報 |
en : APPLIED PHYSICS LETTERS 巻 91, p. 012104-012104, 発行日 2007-07-02 |
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フォーマット | ||||||
application/pdf | ||||||
著者版フラグ | ||||||
値 | publisher | |||||
URI | ||||||
識別子 | http://dx.doi.org/10.1063/1.2753546 | |||||
識別子タイプ | DOI | |||||
URI | ||||||
識別子 | http://hdl.handle.net/2237/11981 | |||||
識別子タイプ | HDL |