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  1. B200 工学部/工学研究科
  2. B200a 雑誌掲載論文
  3. 学術雑誌

Heavy hole doping of epitaxial thin films of a wide gap p-type semiconductor, LaCuOSe, and analysis of the effective mass

http://hdl.handle.net/2237/11981
http://hdl.handle.net/2237/11981
25313f3a-cd3c-46f1-9c9f-b7b89ab152de
名前 / ファイル ライセンス アクション
ApplPhysLett_91_012104.pdf ApplPhysLett_91_012104.pdf (299.3 kB)
Item type 学術雑誌論文 / Journal Article(1)
公開日 2009-07-28
タイトル
タイトル Heavy hole doping of epitaxial thin films of a wide gap p-type semiconductor, LaCuOSe, and analysis of the effective mass
言語 en
著者 Hiramatsu, Hidenori

× Hiramatsu, Hidenori

WEKO 30650

en Hiramatsu, Hidenori

Search repository
Ueda, Kazushige

× Ueda, Kazushige

WEKO 30651

en Ueda, Kazushige

Search repository
Ohta, Hiromichi

× Ohta, Hiromichi

WEKO 30652

en Ohta, Hiromichi

Search repository
Hirano, Masahiro

× Hirano, Masahiro

WEKO 30653

en Hirano, Masahiro

Search repository
Kikuchi, Maiko

× Kikuchi, Maiko

WEKO 30654

en Kikuchi, Maiko

Search repository
Yanagi, Hiroshi

× Yanagi, Hiroshi

WEKO 30655

en Yanagi, Hiroshi

Search repository
Kamiya, Toshio

× Kamiya, Toshio

WEKO 30656

en Kamiya, Toshio

Search repository
Hosono, Hideo

× Hosono, Hideo

WEKO 30657

en Hosono, Hideo

Search repository
アクセス権
アクセス権 open access
アクセス権URI http://purl.org/coar/access_right/c_abf2
権利
言語 en
権利情報 Copyright (2007) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
抄録
内容記述 The high density hole doping (1.7×10^21cm^{−3}) for a wide gap (Eg=〰2.8 eV) p-type semiconductor was achieved on 40nm thick Mg-doped LaCuOSe epitaxial films. These films exhibited distinct free carrier absorption, and the effective mass and momentum relaxation time were analyzed. Its small hole mobility [〰3.5cm^2/(V s)] compared to the electron mobilities of wide gap n-type semiconductors is attributed to a heavy effective mass of 1.6±0.2m_e. Regardless of the heavy hole doping, a band filling effect was not observed. These results are discussed with a rigid band model and an acceptor band model.
言語 en
内容記述タイプ Abstract
出版者
言語 en
出版者 American Institite of Physics
言語
言語 eng
資源タイプ
資源タイプresource http://purl.org/coar/resource_type/c_6501
タイプ journal article
出版タイプ
出版タイプ VoR
出版タイプResource http://purl.org/coar/version/c_970fb48d4fbd8a85
DOI
関連タイプ isVersionOf
識別子タイプ DOI
関連識別子 https://doi.org/10.1063/1.2753546
ISSN
収録物識別子タイプ PISSN
収録物識別子 0003-6951
書誌情報 en : APPLIED PHYSICS LETTERS

巻 91, p. 012104-012104, 発行日 2007-07-02
フォーマット
application/pdf
著者版フラグ
値 publisher
URI
識別子 http://dx.doi.org/10.1063/1.2753546
識別子タイプ DOI
URI
識別子 http://hdl.handle.net/2237/11981
識別子タイプ HDL
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