{"_buckets": {"deposit": "296bcc7f-35ae-446c-8b69-fb1108f26fde"}, "_deposit": {"id": "10857", "owners": [], "pid": {"revision_id": 0, "type": "depid", "value": "10857"}, "status": "published"}, "_oai": {"id": "oai:nagoya.repo.nii.ac.jp:00010857", "sets": ["322"]}, "author_link": ["32661", "32662", "32663", "32664", "32665", "32666"], "item_10_alternative_title_19": {"attribute_name": "その他のタイトル", "attribute_value_mlt": [{"subitem_alternative_title": "Analysis of Stressed-Gate SiO_2 Films with Electron Injection by Conductive Atomic Force Microscopy", "subitem_alternative_title_language": "en"}]}, "item_10_biblio_info_6": {"attribute_name": "書誌情報", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2004-08-01", "bibliographicIssueDateType": "Issued"}, "bibliographicIssueNumber": "8", "bibliographicPageEnd": "624", "bibliographicPageStart": "616", "bibliographicVolumeNumber": "J87-C", "bibliographic_titles": [{"bibliographic_title": "電子情報通信学会論文誌", "bibliographic_titleLang": "ja"}]}]}, "item_10_description_4": {"attribute_name": "抄録", "attribute_value_mlt": [{"subitem_description": "電流検出型原子間力顕微鏡法 (Conductive Atomic Force Microscopy :C-AFM)を用いて，Metal-Oxide-Semiconductor(MOS)キャパシタで観測される絶縁膜劣化を，ナノスケールで直接観察する手法を開発した．定電流ストレスを印加したシリコン酸化膜を本手法によって観察した結果，Stress-Induced Leakage Current (SILC)に関連した局所リーク電流スポットが観測された．これにより，ストレス誘起される膜中欠陥の局所性と分布，それらに起因した局所的なリーク伝導機構を実験的に明らかにした．", "subitem_description_language": "ja", "subitem_description_type": "Abstract"}]}, "item_10_identifier_60": {"attribute_name": "URI", "attribute_value_mlt": [{"subitem_identifier_type": "HDL", "subitem_identifier_uri": "http://hdl.handle.net/2237/12703"}, {"subitem_identifier_type": "URI", "subitem_identifier_uri": "http://www.ieice.org/jpn/trans_online/index.html"}]}, "item_10_publisher_32": {"attribute_name": "出版者", "attribute_value_mlt": [{"subitem_publisher": "電子情報通信学会", "subitem_publisher_language": "ja"}]}, "item_10_relation_43": {"attribute_name": "関連情報", "attribute_value_mlt": [{"subitem_relation_type": "isVersionOf", "subitem_relation_type_id": {"subitem_relation_type_id_text": "http://www.ieice.org/jpn/trans_online/index.html", "subitem_relation_type_select": "URI"}}]}, "item_10_rights_12": {"attribute_name": "権利", "attribute_value_mlt": [{"subitem_rights": "Copyright 2004 IEICE", "subitem_rights_language": "en"}]}, "item_10_select_15": {"attribute_name": "著者版フラグ", "attribute_value_mlt": [{"subitem_select_item": "publisher"}]}, "item_10_source_id_7": {"attribute_name": "ISSN", "attribute_value_mlt": [{"subitem_source_identifier": "1345-2827", "subitem_source_identifier_type": "PISSN"}]}, "item_10_text_14": {"attribute_name": "フォーマット", "attribute_value_mlt": [{"subitem_text_value": "application/pdf"}]}, "item_1615787544753": {"attribute_name": "出版タイプ", "attribute_value_mlt": [{"subitem_version_resource": "http://purl.org/coar/version/c_970fb48d4fbd8a85", "subitem_version_type": "VoR"}]}, "item_access_right": {"attribute_name": "アクセス権", "attribute_value_mlt": [{"subitem_access_right": "open access", "subitem_access_right_uri": "http://purl.org/coar/access_right/c_abf2"}]}, "item_creator": {"attribute_name": "著者", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "世古, 明義", "creatorNameLang": "ja"}], "nameIdentifiers": [{"nameIdentifier": "32661", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "渡辺, 行彦", "creatorNameLang": "ja"}], "nameIdentifiers": [{"nameIdentifier": "32662", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "近藤, 博基", "creatorNameLang": "ja"}], "nameIdentifiers": [{"nameIdentifier": "32663", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "酒井, 朗", "creatorNameLang": "ja"}], "nameIdentifiers": [{"nameIdentifier": "32664", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "財満, 鎭明", "creatorNameLang": "ja"}], "nameIdentifiers": [{"nameIdentifier": "32665", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "安田, 幸夫", "creatorNameLang": "ja"}], "nameIdentifiers": [{"nameIdentifier": "32666", "nameIdentifierScheme": "WEKO"}]}]}, "item_files": {"attribute_name": "ファイル情報", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2018-02-20"}], "displaytype": "detail", "download_preview_message": "", "file_order": 0, "filename": "j87-c_8_616.pdf", "filesize": [{"value": "1.4 MB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "licensetype": "license_note", "mimetype": "application/pdf", "size": 1400000.0, "url": {"label": "j87-c_8_616.pdf", "objectType": "fulltext", "url": "https://nagoya.repo.nii.ac.jp/record/10857/files/j87-c_8_616.pdf"}, "version_id": "0003e5de-7328-434d-a3a6-c66d74ba3cef"}]}, "item_keyword": {"attribute_name": "キーワード", "attribute_value_mlt": [{"subitem_subject": "シリコン酸化膜", "subitem_subject_scheme": "Other"}, {"subitem_subject": "電流検出型原子間力顕微鏡法", "subitem_subject_scheme": "Other"}, {"subitem_subject": "信頼性", "subitem_subject_scheme": "Other"}, {"subitem_subject": "ストレス誘起リーク電流", "subitem_subject_scheme": "Other"}, {"subitem_subject": "トラップ", "subitem_subject_scheme": "Other"}]}, "item_language": {"attribute_name": "言語", "attribute_value_mlt": [{"subitem_language": "jpn"}]}, "item_resource_type": {"attribute_name": "資源タイプ", "attribute_value_mlt": [{"resourcetype": "journal article", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "電子注入ストレスを加えたゲート酸化膜の電流検出型原子間力顕微鏡による解析", "item_titles": {"attribute_name": "タイトル", "attribute_value_mlt": [{"subitem_title": "電子注入ストレスを加えたゲート酸化膜の電流検出型原子間力顕微鏡による解析", "subitem_title_language": "ja"}]}, "item_type_id": "10", "owner": "1", "path": ["322"], "permalink_uri": "http://hdl.handle.net/2237/12703", "pubdate": {"attribute_name": "PubDate", "attribute_value": "2010-02-19"}, "publish_date": "2010-02-19", "publish_status": "0", "recid": "10857", "relation": {}, "relation_version_is_last": true, "title": ["電子注入ストレスを加えたゲート酸化膜の電流検出型原子間力顕微鏡による解析"], "weko_shared_id": -1}