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電子注入ストレスを加えたゲート酸化膜の電流検出型原子間力顕微鏡による解析
http://hdl.handle.net/2237/12703
7b39c8df-f9a5-4132-8549-3bce7a0bea9b
名前 / ファイル | ライセンス | アクション | |
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2010-02-19 | |||||
タイトル | ||||||
タイトル | 電子注入ストレスを加えたゲート酸化膜の電流検出型原子間力顕微鏡による解析 | |||||
その他のタイトル | ||||||
その他のタイトル | Analysis of Stressed-Gate SiO_2 Films with Electron Injection by Conductive Atomic Force Microscopy | |||||
著者 |
世古, 明義
× 世古, 明義× 渡辺, 行彦× 近藤, 博基× 酒井, 朗× 財満, 鎭明× 安田, 幸夫 |
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権利 | ||||||
権利情報 | Copyright 2004 IEICE | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | シリコン酸化膜 | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | 電流検出型原子間力顕微鏡法 | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | 信頼性 | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | ストレス誘起リーク電流 | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | トラップ | |||||
抄録 | ||||||
内容記述 | 電流検出型原子間力顕微鏡法 (Conductive Atomic Force Microscopy :C-AFM)を用いて,Metal-Oxide-Semiconductor(MOS)キャパシタで観測される絶縁膜劣化を,ナノスケールで直接観察する手法を開発した.定電流ストレスを印加したシリコン酸化膜を本手法によって観察した結果,Stress-Induced Leakage Current (SILC)に関連した局所リーク電流スポットが観測された.これにより,ストレス誘起される膜中欠陥の局所性と分布,それらに起因した局所的なリーク伝導機構を実験的に明らかにした. | |||||
内容記述タイプ | Abstract | |||||
出版者 | ||||||
出版者 | 電子情報通信学会 | |||||
言語 | ||||||
言語 | jpn | |||||
資源タイプ | ||||||
資源タイプresource | http://purl.org/coar/resource_type/c_6501 | |||||
タイプ | journal article | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 1345-2827 | |||||
書誌情報 |
電子情報通信学会論文誌 巻 J87-C, 号 8, p. 616-624, 発行日 2004-08-01 |
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フォーマット | ||||||
application/pdf | ||||||
著者版フラグ | ||||||
値 | publisher | |||||
URI | ||||||
識別子 | http://hdl.handle.net/2237/12703 | |||||
識別子タイプ | HDL | |||||
URI | ||||||
識別子 | http://www.ieice.org/jpn/trans_online/index.html | |||||
識別子タイプ | URI |