WEKO3
アイテム
In situ growth of superconducting NdFeAs(O,F) thin films by molecular beam epitaxy
http://hdl.handle.net/2237/14198
http://hdl.handle.net/2237/1419852581e13-f1b9-4fc1-9053-bb18616beb35
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
applied_physics_letters_97_4_042509.pdf (357.3 kB)
|
|
| アイテムタイプ | 学術雑誌論文 / Journal Article(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2010-10-07 | |||||
| タイトル | ||||||
| タイトル | In situ growth of superconducting NdFeAs(O,F) thin films by molecular beam epitaxy | |||||
| 言語 | en | |||||
| 著者 |
Kawaguchi, T.
× Kawaguchi, T.× Uemura, H.× Ohno, T.× Tabuchi, M.× Ujihara, T.× Takenaka, K.× Takeda, Y.× Ikuta, H. |
|||||
| アクセス権 | ||||||
| アクセス権 | open access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_abf2 | |||||
| 権利 | ||||||
| 権利情報 | Copyright (2010) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. | |||||
| 言語 | en | |||||
| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | Superconducting NdFeAs(O,F) thin films were grown on GaAs substrates by molecular beam epitaxy. Films grown with a sufficiently long growth time exhibited a clear superconducting transition with an onset temperature up to 48 K and zero resistance temperature up to 42 K without the need of an ex situ annealing process. Electron probe microanalysis and Hall coefficient measurements indicated that the superconducting films are doped with fluorine, and depth-profile analysis by Auger electron spectroscopy revealed the formation of a NdOF layer near the surface, which is probably connected with the fluorine doping. | |||||
| 言語 | en | |||||
| 出版者 | ||||||
| 出版者 | American Institute of Physics | |||||
| 言語 | en | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプresource | http://purl.org/coar/resource_type/c_6501 | |||||
| タイプ | journal article | |||||
| 出版タイプ | ||||||
| 出版タイプ | VoR | |||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
| DOI | ||||||
| 関連タイプ | isVersionOf | |||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | https://doi.org/10.1063/1.3464171 | |||||
| ISSN | ||||||
| 収録物識別子タイプ | PISSN | |||||
| 収録物識別子 | 0003-6951 | |||||
| 書誌情報 |
en : APPLIED PHYSICS LETTERS 巻 97, 号 4, p. 042509-042509, 発行日 2010-07-26 |
|||||
| 著者版フラグ | ||||||
| 値 | publisher | |||||
| URI | ||||||
| 識別子 | http://hdl.handle.net/2237/14198 | |||||
| 識別子タイプ | HDL | |||||
| URI | ||||||
| 識別子 | http://dx.doi.org/10.1063/1.3464171 | |||||
| 識別子タイプ | DOI | |||||
