{"_buckets": {"deposit": "b2d56914-0c42-4fb7-9269-39051510cecb"}, "_deposit": {"id": "13110", "owners": [], "pid": {"revision_id": 0, "type": "depid", "value": "13110"}, "status": "published"}, "_oai": {"id": "oai:nagoya.repo.nii.ac.jp:00013110"}, "item_10_biblio_info_6": {"attribute_name": "\u66f8\u8a8c\u60c5\u5831", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2001-10-01", "bibliographicIssueDateType": "Issued"}, "bibliographicIssueNumber": "10", "bibliographicPageEnd": "1322", "bibliographicPageStart": "1318", "bibliographicVolumeNumber": "E84-C", "bibliographic_titles": [{"bibliographic_title": "IEICE transactions on electronics"}]}]}, "item_10_description_4": {"attribute_name": "\u6284\u9332", "attribute_value_mlt": [{"subitem_description": "The low-frequency noise of InGaAs pseudomorphic HEMTs fabricated on GaAs substrate was studied. The dependence of the noise spectral density on the gate voltage indicates that the channel of the device dominates the low-frequency noise. Generation-recombination (G-R) noise was observed in the form of bulges superimposed on a background of 1/f. The activation energyof the G-R noise was 0.32-0.39 eV which is close to that of the DX center, suggesting that the origin of the G-R noise is the DX center in the AlGaAs barrier layer. Little bulge was observed in the gate current noise of the HEMTs with large InAs mole fractions of 0.4 and 0.5. Generation of the traps with different time constant can explain this behavior.", "subitem_description_type": "Abstract"}]}, "item_10_identifier_60": {"attribute_name": "URI", "attribute_value_mlt": [{"subitem_identifier_type": "URI", "subitem_identifier_uri": "http://www.ieice.org/jpn/trans_online/index.html"}, {"subitem_identifier_type": "HDL", "subitem_identifier_uri": "http://hdl.handle.net/2237/15005"}]}, "item_10_publisher_32": {"attribute_name": "\u51fa\u7248\u8005", "attribute_value_mlt": [{"subitem_publisher": "Institute of Electronics, Information and Communication Engineers"}]}, "item_10_rights_12": {"attribute_name": "\u6a29\u5229", "attribute_value_mlt": [{"subitem_rights": "Copyright (C) 2001 IEICE"}]}, "item_10_select_15": {"attribute_name": "\u8457\u8005\u7248\u30d5\u30e9\u30b0", "attribute_value_mlt": [{"subitem_select_item": "publisher"}]}, "item_10_source_id_7": {"attribute_name": "ISSN", "attribute_value_mlt": [{"subitem_source_identifier": "0916-8516", "subitem_source_identifier_type": "ISSN"}]}, "item_creator": {"attribute_name": "\u8457\u8005", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "MIZUTANI, Takashi"}], "nameIdentifiers": [{"nameIdentifier": "41276", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "YAMAMOTO, Makoto"}], "nameIdentifiers": [{"nameIdentifier": "41277", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "KISHIMOTO, Shigeru"}], "nameIdentifiers": [{"nameIdentifier": "41278", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "MAEZAWA, Koichi"}], "nameIdentifiers": [{"nameIdentifier": "41279", "nameIdentifierScheme": "WEKO"}]}]}, "item_files": {"attribute_name": "\u30d5\u30a1\u30a4\u30eb\u60c5\u5831", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2018-02-20"}], "displaytype": "detail", "download_preview_message": "", "file_order": 0, "filename": "481.pdf", "filesize": [{"value": "389.5 kB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "licensetype": "license_free", "mimetype": "application/pdf", "size": 389500.0, "url": {"label": "481.pdf", "url": "https://nagoya.repo.nii.ac.jp/record/13110/files/481.pdf"}, "version_id": "373c2998-768d-4d1a-aaba-677cc9733df0"}]}, "item_keyword": {"attribute_name": "\u30ad\u30fc\u30ef\u30fc\u30c9", "attribute_value_mlt": [{"subitem_subject": "low-frequency noise", "subitem_subject_scheme": "Other"}, {"subitem_subject": "HEMT", "subitem_subject_scheme": "Other"}, {"subitem_subject": "Arrhenius plot", "subitem_subject_scheme": "Other"}, {"subitem_subject": "DX center", "subitem_subject_scheme": "Other"}, {"subitem_subject": "Lorentz noise", "subitem_subject_scheme": "Other"}]}, "item_language": {"attribute_name": "\u8a00\u8a9e", "attribute_value_mlt": [{"subitem_language": "eng"}]}, "item_resource_type": {"attribute_name": "\u8cc7\u6e90\u30bf\u30a4\u30d7", "attribute_value_mlt": [{"resourcetype": "journal article", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "Low-Frequency Noise Characteristics of AlGaAs/InGaAs Pseudomorphic HEMTs", "item_titles": {"attribute_name": "\u30bf\u30a4\u30c8\u30eb", "attribute_value_mlt": [{"subitem_title": "Low-Frequency Noise Characteristics of AlGaAs/InGaAs Pseudomorphic HEMTs"}]}, "item_type_id": "10", "owner": "1", "path": ["320/321/322"], "permalink_uri": "http://hdl.handle.net/2237/15005", "pubdate": {"attribute_name": "\u516c\u958b\u65e5", "attribute_value": "2011-07-01"}, "publish_date": "2011-07-01", "publish_status": "0", "recid": "13110", "relation": {}, "relation_version_is_last": true, "title": ["Low-Frequency Noise Characteristics of AlGaAs/InGaAs Pseudomorphic HEMTs"], "weko_shared_id": null}