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Low-Frequency Noise Characteristics of AlGaAs/InGaAs Pseudomorphic HEMTs
http://hdl.handle.net/2237/15005
http://hdl.handle.net/2237/15005498b428b-0515-4bcb-b2cf-33524571b046
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
481.pdf (389.5 kB)
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| Item type | 学術雑誌論文 / Journal Article(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2011-07-01 | |||||
| タイトル | ||||||
| タイトル | Low-Frequency Noise Characteristics of AlGaAs/InGaAs Pseudomorphic HEMTs | |||||
| 言語 | en | |||||
| 著者 |
MIZUTANI, Takashi
× MIZUTANI, Takashi× YAMAMOTO, Makoto× KISHIMOTO, Shigeru× MAEZAWA, Koichi |
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| アクセス権 | ||||||
| アクセス権 | open access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_abf2 | |||||
| 権利 | ||||||
| 言語 | en | |||||
| 権利情報 | Copyright (C) 2001 IEICE | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | low-frequency noise | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | HEMT | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | Arrhenius plot | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | DX center | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | Lorentz noise | |||||
| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | The low-frequency noise of InGaAs pseudomorphic HEMTs fabricated on GaAs substrate was studied. The dependence of the noise spectral density on the gate voltage indicates that the channel of the device dominates the low-frequency noise. Generation-recombination (G-R) noise was observed in the form of bulges superimposed on a background of 1/f. The activation energyof the G-R noise was 0.32-0.39 eV which is close to that of the DX center, suggesting that the origin of the G-R noise is the DX center in the AlGaAs barrier layer. Little bulge was observed in the gate current noise of the HEMTs with large InAs mole fractions of 0.4 and 0.5. Generation of the traps with different time constant can explain this behavior. | |||||
| 言語 | en | |||||
| 出版者 | ||||||
| 出版者 | Institute of Electronics, Information and Communication Engineers | |||||
| 言語 | en | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | journal article | |||||
| 出版タイプ | ||||||
| 出版タイプ | VoR | |||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
| 関連情報 | ||||||
| 関連タイプ | isVersionOf | |||||
| 識別子タイプ | URI | |||||
| 関連識別子 | http://www.ieice.org/jpn/trans_online/index.html | |||||
| ISSN | ||||||
| 収録物識別子タイプ | PISSN | |||||
| 収録物識別子 | 0916-8516 | |||||
| 書誌情報 |
en : IEICE transactions on electronics 巻 E84-C, 号 10, p. 1318-1322, 発行日 2001-10-01 |
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| 著者版フラグ | ||||||
| 値 | publisher | |||||
| URI | ||||||
| 識別子 | http://www.ieice.org/jpn/trans_online/index.html | |||||
| 識別子タイプ | URI | |||||
| URI | ||||||
| 識別子 | http://hdl.handle.net/2237/15005 | |||||
| 識別子タイプ | HDL | |||||
