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  1. B200 工学部/工学研究科
  2. B200d 学位論文
  3. 博士論文(工博・論工博)

Al2O3をゲート絶縁膜とするAlGaN/GaN MOSHFETの作製・評価に関する研究

http://hdl.handle.net/2237/18002
3a2266cf-1a98-477f-b096-64302dcb4f5a
名前 / ファイル ライセンス アクション
k10191.pdf k10191.pdf (8.1 MB)
Item type 学位論文 / Thesis or Dissertation(1)
公開日 2013-05-16
タイトル
タイトル Al2O3をゲート絶縁膜とするAlGaN/GaN MOSHFETの作製・評価に関する研究
著者 宮崎, 英志

× 宮崎, 英志

WEKO 48179

宮崎, 英志

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内容記述
内容記述 名古屋大学博士学位論文 学位の種類 : 博士(工学)(課程) 学位授与年月日:平成25年3月25日
内容記述タイプ Other
言語
言語 jpn
資源タイプ
資源 http://purl.org/coar/resource_type/c_46ec
タイプ thesis
書誌情報 発行日 2013-03-25
学位授与年度
学位授与年度 2012
学位授与年月日
学位授与年月日 2013-03-25
学位授与番号
学位授与番号 13901甲第10191号
著者版フラグ
値 publisher
URI
識別子 http://hdl.handle.net/2237/18002
識別子タイプ HDL
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