{"_buckets": {"deposit": "e31ca15f-67d2-4b1d-a3a4-93261f6c5de8"}, "_deposit": {"created_by": 17, "id": "2001364", "owner": "17", "owners": [17], "owners_ext": {"displayname": "\u56f3\u66f8\u60c5\u5831\u4fc2", "username": "repository"}, "pid": {"revision_id": 0, "type": "depid", "value": "2001364"}, "status": "published"}, "_oai": {"id": "oai:nagoya.repo.nii.ac.jp:02001364", "sets": []}, "author_link": [], "control_number": "2001364", "item_1615768549627": {"attribute_name": "\u51fa\u7248\u30bf\u30a4\u30d7", "attribute_value_mlt": [{"subitem_version_resource": "http://purl.org/coar/version/c_ab4af688f83e57aa", "subitem_version_type": "AM"}]}, "item_1629683748249": {"attribute_name": "\u65e5\u4ed8", "attribute_value_mlt": [{"subitem_date_issued_datetime": "2022-05-01", "subitem_date_issued_type": "Available"}]}, "item_9_biblio_info_6": {"attribute_name": "\u66f8\u8a8c\u60c5\u5831", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2021-05", "bibliographicIssueDateType": "Issued"}, "bibliographicIssueNumber": "SB", "bibliographicPageStart": "SBBD03", "bibliographicVolumeNumber": "60", "bibliographic_titles": [{"bibliographic_title": "Japanese Journal of Applied Physics", "bibliographic_titleLang": "en"}]}]}, "item_9_description_4": {"attribute_name": "\u5185\u5bb9\u8a18\u8ff0", "attribute_value_mlt": [{"subitem_description": "Inductively coupled plasma\u2013reactive ion etching (ICP\u2013RIE)-induced damage in heavily Mg-doped p-type GaN ([Mg] = 2 \u00d7 10^19 cm^\u22123) was investigated by low-temperature photoluminescence (PL) and depth-resolved cathodoluminescence (CL) spectroscopy. From PL measurements, we found broad yellow luminescence (YL) with a maximum at around 2.2\u20132.3 eV, whose origin was considered to be isolated nitrogen vacancies (VN), only in etched samples. The depth-resolved CL spectroscopy revealed that the etching-induced YL was distributed up to the electron-beam penetration depth of around 200 nm at a high ICP\u2013RIE bias power (Pbias). Low-bias-power (low-Pbias) ICP\u2013RIE suppressed the YL and its depth distribution to levels similar to those of an unetched sample, and a current\u2013voltage characteristic comparable to that of an unetched sample was obtained for a sample etched with Pbias of 2.5 W.", "subitem_description_language": "en", "subitem_description_type": "Abstract"}]}, "item_9_publisher_32": {"attribute_name": "\u51fa\u7248\u8005", "attribute_value_mlt": [{"subitem_publisher": "IOP publishing", "subitem_publisher_language": "en"}]}, "item_9_relation_43": {"attribute_name": "\u95a2\u9023\u60c5\u5831", "attribute_value_mlt": [{"subitem_relation_type": "isVersionOf", "subitem_relation_type_id": {"subitem_relation_type_id_text": "https://doi.org/10.35848/1347-4065/abd538", "subitem_relation_type_select": "DOI"}}]}, "item_9_rights_12": {"attribute_name": "\u6a29\u5229", "attribute_value_mlt": [{"subitem_rights": "This is the Accepted Manuscript version of an article accepted for publication in [Japanese Journal of Applied Physics]. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it.\u202fThe Version of Record is available online at [https://doi.org/10.35848/1347-4065/abd538]", "subitem_rights_language": "en"}, {"subitem_rights": "\u201cThis Accepted Manuscript is available for reuse under a CC BY-NC-ND licence after the 12 month embargo period provided that all the terms of the licence are adhered to\u201d", "subitem_rights_language": "en"}]}, "item_9_source_id_7": {"attribute_name": "\u53ce\u9332\u7269\u8b58\u5225\u5b50", "attribute_value_mlt": [{"subitem_source_identifier": "0021-4922", "subitem_source_identifier_type": "PISSN"}]}, "item_access_right": {"attribute_name": "\u30a2\u30af\u30bb\u30b9\u6a29", "attribute_value_mlt": [{"subitem_access_right": "open access", "subitem_access_right_uri": "http://purl.org/coar/access_right/c_abf2"}]}, "item_creator": {"attribute_name": "\u8457\u8005", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "Kumabe, Takeru", "creatorNameLang": "en"}]}, {"creatorNames": [{"creatorName": "Ando, Yuto", "creatorNameLang": "en"}]}, {"creatorNames": [{"creatorName": "Watanabe, Hirotaka", "creatorNameLang": "en"}]}, {"creatorNames": [{"creatorName": "Deki, Manato", "creatorNameLang": "en"}]}, {"creatorNames": [{"creatorName": "Tanaka, Atsushi", "creatorNameLang": "en"}]}, {"creatorNames": [{"creatorName": "Nitta, Shugo", "creatorNameLang": "en"}]}, {"creatorNames": [{"creatorName": "Honda, Yoshio", "creatorNameLang": "en"}]}, {"creatorNames": [{"creatorName": "Amano, Hiroshi", "creatorNameLang": "en"}]}]}, "item_files": {"attribute_name": "\u30d5\u30a1\u30a4\u30eb\u60c5\u5831", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2022-05-01"}], "displaytype": "detail", "download_preview_message": "", "file_order": 0, "filename": "201203_JJAP_RegularPaper_Kumabe.pdf", "filesize": [{"value": "1.3 MB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "mimetype": "application/pdf", "size": 1300000.0, "url": {"objectType": "fulltext", "url": "https://nagoya.repo.nii.ac.jp/record/2001364/files/201203_JJAP_RegularPaper_Kumabe.pdf"}, "version_id": "4597d039-6069-4ea9-b7cf-8ad1d15b4fb2"}]}, "item_language": {"attribute_name": "\u8a00\u8a9e", "attribute_value_mlt": [{"subitem_language": "eng"}]}, "item_resource_type": {"attribute_name": "\u8cc7\u6e90\u30bf\u30a4\u30d7", "attribute_value_mlt": [{"resourcetype": "journal article", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "Etching-induced damage in heavily Mg-doped p-type GaN and its suppression by low-bias-power inductively coupled plasma-reactive ion etching", "item_titles": {"attribute_name": "\u30bf\u30a4\u30c8\u30eb", "attribute_value_mlt": [{"subitem_title": "Etching-induced damage in heavily Mg-doped p-type GaN and its suppression by low-bias-power inductively coupled plasma-reactive ion etching", "subitem_title_language": "en"}]}, "item_type_id": "40001", "owner": "17", "path": ["673/674/675"], "permalink_uri": "http://hdl.handle.net/2237/0002001364", "pubdate": {"attribute_name": "PubDate", "attribute_value": "2021-09-08"}, "publish_date": "2021-09-08", "publish_status": "0", "recid": "2001364", "relation": {}, "relation_version_is_last": true, "title": ["Etching-induced damage in heavily Mg-doped p-type GaN and its suppression by low-bias-power inductively coupled plasma-reactive ion etching"], "weko_shared_id": -1}