{"_buckets": {"deposit": "e31ca15f-67d2-4b1d-a3a4-93261f6c5de8"}, "_deposit": {"created_by": 17, "id": "2001364", "owner": "17", "owners": [17], "owners_ext": {"displayname": "図書情報係", "username": "repository"}, "pid": {"revision_id": 0, "type": "depid", "value": "2001364"}, "status": "published"}, "_oai": {"id": "oai:nagoya.repo.nii.ac.jp:02001364", "sets": ["675"]}, "author_link": [], "control_number": "2001364", "item_1615768549627": {"attribute_name": "出版タイプ", "attribute_value_mlt": [{"subitem_version_resource": "http://purl.org/coar/version/c_ab4af688f83e57aa", "subitem_version_type": "AM"}]}, "item_1629683748249": {"attribute_name": "日付", "attribute_value_mlt": [{"subitem_date_issued_datetime": "2022-05-01", "subitem_date_issued_type": "Available"}]}, "item_9_biblio_info_6": {"attribute_name": "書誌情報", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2021-05", "bibliographicIssueDateType": "Issued"}, "bibliographicIssueNumber": "SB", "bibliographicPageStart": "SBBD03", "bibliographicVolumeNumber": "60", "bibliographic_titles": [{"bibliographic_title": "Japanese Journal of Applied Physics", "bibliographic_titleLang": "en"}]}]}, "item_9_description_4": {"attribute_name": "内容記述", "attribute_value_mlt": [{"subitem_description": "Inductively coupled plasma–reactive ion etching (ICP–RIE)-induced damage in heavily Mg-doped p-type GaN ([Mg] = 2 × 10^19 cm^−3) was investigated by low-temperature photoluminescence (PL) and depth-resolved cathodoluminescence (CL) spectroscopy. From PL measurements, we found broad yellow luminescence (YL) with a maximum at around 2.2–2.3 eV, whose origin was considered to be isolated nitrogen vacancies (VN), only in etched samples. The depth-resolved CL spectroscopy revealed that the etching-induced YL was distributed up to the electron-beam penetration depth of around 200 nm at a high ICP–RIE bias power (Pbias). Low-bias-power (low-Pbias) ICP–RIE suppressed the YL and its depth distribution to levels similar to those of an unetched sample, and a current–voltage characteristic comparable to that of an unetched sample was obtained for a sample etched with Pbias of 2.5 W.", "subitem_description_language": "en", "subitem_description_type": "Abstract"}]}, "item_9_publisher_32": {"attribute_name": "出版者", "attribute_value_mlt": [{"subitem_publisher": "IOP publishing", "subitem_publisher_language": "en"}]}, "item_9_relation_43": {"attribute_name": "関連情報", "attribute_value_mlt": [{"subitem_relation_type": "isVersionOf", "subitem_relation_type_id": {"subitem_relation_type_id_text": "https://doi.org/10.35848/1347-4065/abd538", "subitem_relation_type_select": "DOI"}}]}, "item_9_rights_12": {"attribute_name": "権利", "attribute_value_mlt": [{"subitem_rights": "This is the Accepted Manuscript version of an article accepted for publication in [Japanese Journal of Applied Physics]. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at [https://doi.org/10.35848/1347-4065/abd538]", "subitem_rights_language": "en"}, {"subitem_rights": "“This Accepted Manuscript is available for reuse under a CC BY-NC-ND licence after the 12 month embargo period provided that all the terms of the licence are adhered to”", "subitem_rights_language": "en"}]}, "item_9_source_id_7": {"attribute_name": "収録物識別子", "attribute_value_mlt": [{"subitem_source_identifier": "0021-4922", "subitem_source_identifier_type": "PISSN"}]}, "item_access_right": {"attribute_name": "アクセス権", "attribute_value_mlt": [{"subitem_access_right": "open access", "subitem_access_right_uri": "http://purl.org/coar/access_right/c_abf2"}]}, "item_creator": {"attribute_name": "著者", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "Kumabe, Takeru", "creatorNameLang": "en"}]}, {"creatorNames": [{"creatorName": "Ando, Yuto", "creatorNameLang": "en"}]}, {"creatorNames": [{"creatorName": "Watanabe, Hirotaka", "creatorNameLang": "en"}]}, {"creatorNames": [{"creatorName": "Deki, Manato", "creatorNameLang": "en"}]}, {"creatorNames": [{"creatorName": "Tanaka, Atsushi", "creatorNameLang": "en"}]}, {"creatorNames": [{"creatorName": "Nitta, Shugo", "creatorNameLang": "en"}]}, {"creatorNames": [{"creatorName": "Honda, Yoshio", "creatorNameLang": "en"}]}, {"creatorNames": [{"creatorName": "Amano, Hiroshi", "creatorNameLang": "en"}]}]}, "item_files": {"attribute_name": "ファイル情報", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2022-05-01"}], "displaytype": "detail", "download_preview_message": "", "file_order": 0, "filename": "201203_JJAP_RegularPaper_Kumabe.pdf", "filesize": [{"value": "1.3 MB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "mimetype": "application/pdf", "size": 1300000.0, "url": {"objectType": "fulltext", "url": "https://nagoya.repo.nii.ac.jp/record/2001364/files/201203_JJAP_RegularPaper_Kumabe.pdf"}, "version_id": "4597d039-6069-4ea9-b7cf-8ad1d15b4fb2"}]}, "item_language": {"attribute_name": "言語", "attribute_value_mlt": [{"subitem_language": "eng"}]}, "item_resource_type": {"attribute_name": "資源タイプ", "attribute_value_mlt": [{"resourcetype": "journal article", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "Etching-induced damage in heavily Mg-doped p-type GaN and its suppression by low-bias-power inductively coupled plasma-reactive ion etching", "item_titles": {"attribute_name": "タイトル", "attribute_value_mlt": [{"subitem_title": "Etching-induced damage in heavily Mg-doped p-type GaN and its suppression by low-bias-power inductively coupled plasma-reactive ion etching", "subitem_title_language": "en"}]}, "item_type_id": "40001", "owner": "17", "path": ["675"], "permalink_uri": "http://hdl.handle.net/2237/0002001364", "pubdate": {"attribute_name": "PubDate", "attribute_value": "2021-09-08"}, "publish_date": "2021-09-08", "publish_status": "0", "recid": "2001364", "relation": {}, "relation_version_is_last": true, "title": ["Etching-induced damage in heavily Mg-doped p-type GaN and its suppression by low-bias-power inductively coupled plasma-reactive ion etching"], "weko_shared_id": -1}