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  1. F200 未来材料・システム研究所
  2. F200a 雑誌掲載論文
  3. 学術雑誌

Etching-induced damage in heavily Mg-doped p-type GaN and its suppression by low-bias-power inductively coupled plasma-reactive ion etching

http://hdl.handle.net/2237/0002001364
http://hdl.handle.net/2237/0002001364
6ae1d342-faed-4fe1-9168-b55a76e28370
名前 / ファイル ライセンス アクション
201203_JJAP_RegularPaper_Kumabe.pdf 201203_JJAP_RegularPaper_Kumabe.pdf (1.3 MB)
Item type itemtype_ver1(1)
公開日 2021-09-08
タイトル
タイトル Etching-induced damage in heavily Mg-doped p-type GaN and its suppression by low-bias-power inductively coupled plasma-reactive ion etching
言語 en
著者 Kumabe, Takeru

× Kumabe, Takeru

en Kumabe, Takeru

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Ando, Yuto

× Ando, Yuto

en Ando, Yuto

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Watanabe, Hirotaka

× Watanabe, Hirotaka

en Watanabe, Hirotaka

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Deki, Manato

× Deki, Manato

en Deki, Manato

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Tanaka, Atsushi

× Tanaka, Atsushi

en Tanaka, Atsushi

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Nitta, Shugo

× Nitta, Shugo

en Nitta, Shugo

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Honda, Yoshio

× Honda, Yoshio

en Honda, Yoshio

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Amano, Hiroshi

× Amano, Hiroshi

en Amano, Hiroshi

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アクセス権
アクセス権 open access
アクセス権URI http://purl.org/coar/access_right/c_abf2
権利
言語 en
権利情報 This is the Accepted Manuscript version of an article accepted for publication in [Japanese Journal of Applied Physics]. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at [https://doi.org/10.35848/1347-4065/abd538]
権利
言語 en
権利情報 “This Accepted Manuscript is available for reuse under a CC BY-NC-ND licence after the 12 month embargo period provided that all the terms of the licence are adhered to”
内容記述
内容記述 Inductively coupled plasma–reactive ion etching (ICP–RIE)-induced damage in heavily Mg-doped p-type GaN ([Mg] = 2 × 10^19 cm^−3) was investigated by low-temperature photoluminescence (PL) and depth-resolved cathodoluminescence (CL) spectroscopy. From PL measurements, we found broad yellow luminescence (YL) with a maximum at around 2.2–2.3 eV, whose origin was considered to be isolated nitrogen vacancies (VN), only in etched samples. The depth-resolved CL spectroscopy revealed that the etching-induced YL was distributed up to the electron-beam penetration depth of around 200 nm at a high ICP–RIE bias power (Pbias). Low-bias-power (low-Pbias) ICP–RIE suppressed the YL and its depth distribution to levels similar to those of an unetched sample, and a current–voltage characteristic comparable to that of an unetched sample was obtained for a sample etched with Pbias of 2.5 W.
言語 en
内容記述タイプ Abstract
出版者
言語 en
出版者 IOP publishing
言語
言語 eng
資源タイプ
資源タイプresource http://purl.org/coar/resource_type/c_6501
タイプ journal article
出版タイプ
出版タイプ AM
出版タイプResource http://purl.org/coar/version/c_ab4af688f83e57aa
関連情報
関連タイプ isVersionOf
識別子タイプ DOI
関連識別子 https://doi.org/10.35848/1347-4065/abd538
収録物識別子
収録物識別子タイプ PISSN
収録物識別子 0021-4922
書誌情報 en : Japanese Journal of Applied Physics

巻 60, 号 SB, p. SBBD03, 発行日 2021-05
ファイル公開日
日付 2022-05-01
日付タイプ Available
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