Item type |
itemtype_ver1(1) |
公開日 |
2021-10-18 |
タイトル |
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タイトル |
Passivation mechanism of the high-performance titanium oxide carrier-selective contacts on crystalline silicon studied by spectroscopic ellipsometry |
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言語 |
en |
著者 |
Gotoh, Kazuhiro
Miura, Hiroyuki
Shimizu, Ayako
Kurokawa, Yasuyoshi
Usami, Noritaka
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アクセス権 |
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アクセス権 |
open access |
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アクセス権URI |
http://purl.org/coar/access_right/c_abf2 |
権利 |
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言語 |
en |
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権利情報 |
This is the Accepted Manuscript version of an article accepted for publication in [Japanese Journal of Applied Physics]. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at [https://doi.org/10.35848/1347-4065/abd6dd] |
内容記述 |
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内容記述タイプ |
Abstract |
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内容記述 |
Variable-angle spectroscopic ellipsometry analysis is performed to study the impact of post-deposition annealing on the passivation performance of the heterocontacts consisting of titanium oxide and silicon oxide on crystalline silicon (c-Si) prepared by atomic layer deposition (ALD) for the development of high-performance ALD-TiOx/SiOy/c-Si heterocontacts. The highest lifetime of 1.8 ms is obtained for the TiOx/SiOy/c-Si heterocontacts grown at 175 °C after annealing at 275 °C for 3 min. With increasing annealing temperature, the TiOx layers of the TiOx/SiOy/c-Si heterocontacts become dominant. Furthermore, the amplitude of dielectric functions of the ALD-TiOx layer decreases as annealing temperature increases, which suggests that enhanced diffusion of Ti into SiOy interlayers at higher annealing temperature. The sufficient diffusion of Ti atoms into SiOy interlayers is caused by annealing at 275 °C for 3 min, yielding high-quality interface passivation. |
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言語 |
en |
出版者 |
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出版者 |
IOP publishing |
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言語 |
en |
言語 |
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言語 |
eng |
資源タイプ |
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資源タイプ識別子 |
http://purl.org/coar/resource_type/c_6501 |
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資源タイプ |
journal article |
出版タイプ |
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出版タイプ |
AM |
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出版タイプResource |
http://purl.org/coar/version/c_ab4af688f83e57aa |
関連情報 |
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関連タイプ |
isVersionOf |
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識別子タイプ |
DOI |
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関連識別子 |
https://doi.org/10.35848/1347-4065/abd6dd |
収録物識別子 |
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収録物識別子タイプ |
PISSN |
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収録物識別子 |
0021-4922 |
書誌情報 |
en : Japanese Journal of Applied Physics
巻 60,
号 SB,
p. SBBF04,
発行日 2021-05
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ファイル公開日 |
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日付 |
2022-05-01 |
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日付タイプ |
Available |