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  1. B200 工学部/工学研究科
  2. B200a 雑誌掲載論文
  3. 学術雑誌

Passivation mechanism of the high-performance titanium oxide carrier-selective contacts on crystalline silicon studied by spectroscopic ellipsometry

http://hdl.handle.net/2237/0002001537
http://hdl.handle.net/2237/0002001537
bb617afa-1ad6-4508-a9a2-f22127aee84b
名前 / ファイル ライセンス アクション
SSDM-SI-Manuscript_R2.pdf SSDM-SI-Manuscript_R2.pdf (985 KB)
Item type itemtype_ver1(1)
公開日 2021-10-18
タイトル
タイトル Passivation mechanism of the high-performance titanium oxide carrier-selective contacts on crystalline silicon studied by spectroscopic ellipsometry
言語 en
著者 Gotoh, Kazuhiro

× Gotoh, Kazuhiro

en Gotoh, Kazuhiro

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Miura, Hiroyuki

× Miura, Hiroyuki

en Miura, Hiroyuki

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Shimizu, Ayako

× Shimizu, Ayako

en Shimizu, Ayako

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Kurokawa, Yasuyoshi

× Kurokawa, Yasuyoshi

en Kurokawa, Yasuyoshi

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Usami, Noritaka

× Usami, Noritaka

en Usami, Noritaka

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アクセス権
アクセス権 open access
アクセス権URI http://purl.org/coar/access_right/c_abf2
権利
言語 en
権利情報 This is the Accepted Manuscript version of an article accepted for publication in [Japanese Journal of Applied Physics]. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at [https://doi.org/10.35848/1347-4065/abd6dd]
内容記述
内容記述 Variable-angle spectroscopic ellipsometry analysis is performed to study the impact of post-deposition annealing on the passivation performance of the heterocontacts consisting of titanium oxide and silicon oxide on crystalline silicon (c-Si) prepared by atomic layer deposition (ALD) for the development of high-performance ALD-TiOx/SiOy/c-Si heterocontacts. The highest lifetime of 1.8 ms is obtained for the TiOx/SiOy/c-Si heterocontacts grown at 175 °C after annealing at 275 °C for 3 min. With increasing annealing temperature, the TiOx layers of the TiOx/SiOy/c-Si heterocontacts become dominant. Furthermore, the amplitude of dielectric functions of the ALD-TiOx layer decreases as annealing temperature increases, which suggests that enhanced diffusion of Ti into SiOy interlayers at higher annealing temperature. The sufficient diffusion of Ti atoms into SiOy interlayers is caused by annealing at 275 °C for 3 min, yielding high-quality interface passivation.
言語 en
内容記述タイプ Abstract
出版者
言語 en
出版者 IOP publishing
言語
言語 eng
資源タイプ
資源タイプresource http://purl.org/coar/resource_type/c_6501
タイプ journal article
出版タイプ
出版タイプ AM
出版タイプResource http://purl.org/coar/version/c_ab4af688f83e57aa
関連情報
関連タイプ isVersionOf
識別子タイプ DOI
関連識別子 https://doi.org/10.35848/1347-4065/abd6dd
収録物識別子
収録物識別子タイプ PISSN
収録物識別子 0021-4922
書誌情報 en : Japanese Journal of Applied Physics

巻 60, 号 SB, p. SBBF04, 発行日 2021-05
ファイル公開日
日付 2022-05-01
日付タイプ Available
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