{"_buckets": {"deposit": "4e9ba4b1-96ae-4e62-a814-337fbaad51d0"}, "_deposit": {"created_by": 17, "id": "2001537", "owner": "17", "owners": [17], "owners_ext": {"displayname": "図書情報係", "username": "repository"}, "pid": {"revision_id": 0, "type": "depid", "value": "2001537"}, "status": "published"}, "_oai": {"id": "oai:nagoya.repo.nii.ac.jp:02001537", "sets": ["322"]}, "author_link": [], "control_number": "2001537", "item_1615768549627": {"attribute_name": "出版タイプ", "attribute_value_mlt": [{"subitem_version_resource": "http://purl.org/coar/version/c_ab4af688f83e57aa", "subitem_version_type": "AM"}]}, "item_1629683748249": {"attribute_name": "日付", "attribute_value_mlt": [{"subitem_date_issued_datetime": "2022-05-01", "subitem_date_issued_type": "Available"}]}, "item_9_biblio_info_6": {"attribute_name": "書誌情報", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2021-05", "bibliographicIssueDateType": "Issued"}, "bibliographicIssueNumber": "SB", "bibliographicPageStart": "SBBF04", "bibliographicVolumeNumber": "60", "bibliographic_titles": [{"bibliographic_title": "Japanese Journal of Applied Physics", "bibliographic_titleLang": "en"}]}]}, "item_9_description_4": {"attribute_name": "内容記述", "attribute_value_mlt": [{"subitem_description": "Variable-angle spectroscopic ellipsometry analysis is performed to study the impact of post-deposition annealing on the passivation performance of the heterocontacts consisting of titanium oxide and silicon oxide on crystalline silicon (c-Si) prepared by atomic layer deposition (ALD) for the development of high-performance ALD-TiOx/SiOy/c-Si heterocontacts. The highest lifetime of 1.8 ms is obtained for the TiOx/SiOy/c-Si heterocontacts grown at 175 °C after annealing at 275 °C for 3 min. With increasing annealing temperature, the TiOx layers of the TiOx/SiOy/c-Si heterocontacts become dominant. Furthermore, the amplitude of dielectric functions of the ALD-TiOx layer decreases as annealing temperature increases, which suggests that enhanced diffusion of Ti into SiOy interlayers at higher annealing temperature. The sufficient diffusion of Ti atoms into SiOy interlayers is caused by annealing at 275 °C for 3 min, yielding high-quality interface passivation.", "subitem_description_language": "en", "subitem_description_type": "Abstract"}]}, "item_9_publisher_32": {"attribute_name": "出版者", "attribute_value_mlt": [{"subitem_publisher": "IOP publishing", "subitem_publisher_language": "en"}]}, "item_9_relation_43": {"attribute_name": "関連情報", "attribute_value_mlt": [{"subitem_relation_type": "isVersionOf", "subitem_relation_type_id": {"subitem_relation_type_id_text": "https://doi.org/10.35848/1347-4065/abd6dd", "subitem_relation_type_select": "DOI"}}]}, "item_9_rights_12": {"attribute_name": "権利", "attribute_value_mlt": [{"subitem_rights": "This is the Accepted Manuscript version of an article accepted for publication in [Japanese Journal of Applied Physics]. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at [https://doi.org/10.35848/1347-4065/abd6dd]", "subitem_rights_language": "en"}]}, "item_9_source_id_7": {"attribute_name": "収録物識別子", "attribute_value_mlt": [{"subitem_source_identifier": "0021-4922", "subitem_source_identifier_type": "PISSN"}]}, "item_access_right": {"attribute_name": "アクセス権", "attribute_value_mlt": [{"subitem_access_right": "open access", "subitem_access_right_uri": "http://purl.org/coar/access_right/c_abf2"}]}, "item_creator": {"attribute_name": "著者", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "Gotoh, Kazuhiro", "creatorNameLang": "en"}]}, {"creatorNames": [{"creatorName": "Miura, Hiroyuki", "creatorNameLang": "en"}]}, {"creatorNames": [{"creatorName": "Shimizu, Ayako", "creatorNameLang": "en"}]}, {"creatorNames": [{"creatorName": "Kurokawa, Yasuyoshi", "creatorNameLang": "en"}]}, {"creatorNames": [{"creatorName": "Usami, Noritaka", "creatorNameLang": "en"}]}]}, "item_files": {"attribute_name": "ファイル情報", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2022-05-01"}], "displaytype": "detail", "download_preview_message": "", "file_order": 0, "filename": "SSDM-SI-Manuscript_R2.pdf", "filesize": [{"value": "985 KB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "mimetype": "application/pdf", "size": 985000.0, "url": {"objectType": "fulltext", "url": "https://nagoya.repo.nii.ac.jp/record/2001537/files/SSDM-SI-Manuscript_R2.pdf"}, "version_id": "25210b7c-e2e7-4c51-a9ae-37c88bbca687"}]}, "item_language": {"attribute_name": "言語", "attribute_value_mlt": [{"subitem_language": "eng"}]}, "item_resource_type": {"attribute_name": "資源タイプ", "attribute_value_mlt": [{"resourcetype": "journal article", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "Passivation mechanism of the high-performance titanium oxide carrier-selective contacts on crystalline silicon studied by spectroscopic ellipsometry", "item_titles": {"attribute_name": "タイトル", "attribute_value_mlt": [{"subitem_title": "Passivation mechanism of the high-performance titanium oxide carrier-selective contacts on crystalline silicon studied by spectroscopic ellipsometry", "subitem_title_language": "en"}]}, "item_type_id": "40001", "owner": "17", "path": ["322"], "permalink_uri": "http://hdl.handle.net/2237/0002001537", "pubdate": {"attribute_name": "PubDate", "attribute_value": "2021-10-18"}, "publish_date": "2021-10-18", "publish_status": "0", "recid": "2001537", "relation": {}, "relation_version_is_last": true, "title": ["Passivation mechanism of the high-performance titanium oxide carrier-selective contacts on crystalline silicon studied by spectroscopic ellipsometry"], "weko_shared_id": -1}