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  1. B200 工学部/工学研究科
  2. B200a 雑誌掲載論文
  3. 学術雑誌

Influence of orientation on the electro-optic effect in epitaxial Y-doped HfO2 ferroelectric thin films

http://hdl.handle.net/2237/0002002040
http://hdl.handle.net/2237/0002002040
58dfa015-63f8-481d-9f63-3c9523994645
名前 / ファイル ライセンス アクション
FMA_JJAP_HfO2_S.Kondo_revised_final_2.pdf FMA_JJAP_HfO2_S.Kondo_revised_final_2.pdf (7.3 MB)
Item type itemtype_ver1(1)
公開日 2022-02-07
タイトル
タイトル Influence of orientation on the electro-optic effect in epitaxial Y-doped HfO2 ferroelectric thin films
言語 en
著者 Kondo, Shinya

× Kondo, Shinya

en Kondo, Shinya

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Shimura, Reijiro

× Shimura, Reijiro

en Shimura, Reijiro

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Teranishi, Takashi

× Teranishi, Takashi

en Teranishi, Takashi

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Kishimoto, Akira

× Kishimoto, Akira

en Kishimoto, Akira

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Nagasaki, Takanori

× Nagasaki, Takanori

en Nagasaki, Takanori

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Funakubo, Hiroshi

× Funakubo, Hiroshi

en Funakubo, Hiroshi

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Yamada, Tomoaki

× Yamada, Tomoaki

en Yamada, Tomoaki

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アクセス権
アクセス権 open access
アクセス権URI http://purl.org/coar/access_right/c_abf2
権利
言語 en
権利情報 This is the Accepted Manuscript version of an article accepted for publication in [Japanese Journal of Applied Physics]. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at [10.35848/1347-4065/ac17e0]
権利
言語 en
権利情報 “This Accepted Manuscript is available for reuse under a CC BY-NC-ND licence after the 12 month embargo period provided that all the terms of the licence are adhered to”
内容記述
内容記述 Recently, we reported linear electro-optic (EO) effects in (100)-epitaxial yttrium-doped hafnium dioxide (Y-HfO2) ferroelectric thin films. In this study, we have investigated the influence of orientation on the EO effect in Y-HfO2 thin-film. (111)-epitaxial undoped HfO2 and Y-HfO2 films were deposited on Sn-doped In2O3/yttria-stabilized zirconia (111) substrates at room temperature through radiofrequency magnetron sputtering. Although the undoped HfO2 film showed typical paraelectric characteristics, ferroelectricity was observed in the (111)-Y-HfO2 film. Remnant polarization in the (111)-Y-HfO2 film was higher than that in the (100)-Y-HfO2 film. The (111)-Y-HfO2 film exhibited a linear EO effect based on ferroelectricity, which is consistent with that of the (100)-Y-HfO2 film. The average EO coefficient rc of the (111)-Y-HfO2 film was 0.67 pm V^−1, which is higher than that of the (100)-Y-HfO2 film. This result is reasonable considering the difference in remnant polarization between the (100)-Y-HfO2 and (111)-Y-HfO2 films.
言語 en
内容記述タイプ Abstract
出版者
言語 en
出版者 IOP publishing
言語
言語 eng
資源タイプ
資源タイプresource http://purl.org/coar/resource_type/c_6501
タイプ journal article
出版タイプ
出版タイプ AM
出版タイプResource http://purl.org/coar/version/c_ab4af688f83e57aa
関連情報
関連タイプ isVersionOf
識別子タイプ DOI
関連識別子 https://doi.org/10.35848/1347-4065/ac17e0
収録物識別子
収録物識別子タイプ PISSN
収録物識別子 0021-4922
書誌情報 en : Japanese Journal of Applied Physics

巻 60, 号 SF, p. SFFB13, 発行日 2021-11
ファイル公開日
日付 2022-11-01
日付タイプ Available
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