{"_buckets": {"deposit": "96dc93f9-5429-48bf-bf56-3627e4e99e8e"}, "_deposit": {"created_by": 17, "id": "2002040", "owner": "17", "owners": [17], "owners_ext": {"displayname": "図書情報係", "username": "repository"}, "pid": {"revision_id": 0, "type": "depid", "value": "2002040"}, "status": "published"}, "_oai": {"id": "oai:nagoya.repo.nii.ac.jp:02002040", "sets": ["322"]}, "author_link": [], "control_number": "2002040", "item_1615768549627": {"attribute_name": "出版タイプ", "attribute_value_mlt": [{"subitem_version_resource": "http://purl.org/coar/version/c_ab4af688f83e57aa", "subitem_version_type": "AM"}]}, "item_1629683748249": {"attribute_name": "日付", "attribute_value_mlt": [{"subitem_date_issued_datetime": "2022-11-01", "subitem_date_issued_type": "Available"}]}, "item_9_biblio_info_6": {"attribute_name": "書誌情報", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2021-11", "bibliographicIssueDateType": "Issued"}, "bibliographicIssueNumber": "SF", "bibliographicPageStart": "SFFB13", "bibliographicVolumeNumber": "60", "bibliographic_titles": [{"bibliographic_title": "Japanese Journal of Applied Physics", "bibliographic_titleLang": "en"}]}]}, "item_9_description_4": {"attribute_name": "内容記述", "attribute_value_mlt": [{"subitem_description": "Recently, we reported linear electro-optic (EO) effects in (100)-epitaxial yttrium-doped hafnium dioxide (Y-HfO2) ferroelectric thin films. In this study, we have investigated the influence of orientation on the EO effect in Y-HfO2 thin-film. (111)-epitaxial undoped HfO2 and Y-HfO2 films were deposited on Sn-doped In2O3/yttria-stabilized zirconia (111) substrates at room temperature through radiofrequency magnetron sputtering. Although the undoped HfO2 film showed typical paraelectric characteristics, ferroelectricity was observed in the (111)-Y-HfO2 film. Remnant polarization in the (111)-Y-HfO2 film was higher than that in the (100)-Y-HfO2 film. The (111)-Y-HfO2 film exhibited a linear EO effect based on ferroelectricity, which is consistent with that of the (100)-Y-HfO2 film. The average EO coefficient rc of the (111)-Y-HfO2 film was 0.67 pm V^−1, which is higher than that of the (100)-Y-HfO2 film. This result is reasonable considering the difference in remnant polarization between the (100)-Y-HfO2 and (111)-Y-HfO2 films.", "subitem_description_language": "en", "subitem_description_type": "Abstract"}]}, "item_9_publisher_32": {"attribute_name": "出版者", "attribute_value_mlt": [{"subitem_publisher": "IOP publishing", "subitem_publisher_language": "en"}]}, "item_9_relation_43": {"attribute_name": "関連情報", "attribute_value_mlt": [{"subitem_relation_type": "isVersionOf", "subitem_relation_type_id": {"subitem_relation_type_id_text": "https://doi.org/10.35848/1347-4065/ac17e0", "subitem_relation_type_select": "DOI"}}]}, "item_9_rights_12": {"attribute_name": "権利", "attribute_value_mlt": [{"subitem_rights": "This is the Accepted Manuscript version of an article accepted for publication in [Japanese Journal of Applied Physics]. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at [10.35848/1347-4065/ac17e0]", "subitem_rights_language": "en"}, {"subitem_rights": "“This Accepted Manuscript is available for reuse under a CC BY-NC-ND licence after the 12 month embargo period provided that all the terms of the licence are adhered to”", "subitem_rights_language": "en"}]}, "item_9_source_id_7": {"attribute_name": "収録物識別子", "attribute_value_mlt": [{"subitem_source_identifier": "0021-4922", "subitem_source_identifier_type": "PISSN"}]}, "item_access_right": {"attribute_name": "アクセス権", "attribute_value_mlt": [{"subitem_access_right": "open access", "subitem_access_right_uri": "http://purl.org/coar/access_right/c_abf2"}]}, "item_creator": {"attribute_name": "著者", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "Kondo, Shinya", "creatorNameLang": "en"}]}, {"creatorNames": [{"creatorName": "Shimura, Reijiro", "creatorNameLang": "en"}]}, {"creatorNames": [{"creatorName": "Teranishi, Takashi", "creatorNameLang": "en"}]}, {"creatorNames": [{"creatorName": "Kishimoto, Akira", "creatorNameLang": "en"}]}, {"creatorNames": [{"creatorName": "Nagasaki, Takanori", "creatorNameLang": "en"}]}, {"creatorNames": [{"creatorName": "Funakubo, Hiroshi", "creatorNameLang": "en"}]}, {"creatorNames": [{"creatorName": "Yamada, Tomoaki", "creatorNameLang": "en"}]}]}, "item_files": {"attribute_name": "ファイル情報", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2022-11-01"}], "displaytype": "detail", "download_preview_message": "", "file_order": 0, "filename": "FMA_JJAP_HfO2_S.Kondo_revised_final_2.pdf", "filesize": [{"value": "7.3 MB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "mimetype": "application/pdf", "size": 7300000.0, "url": {"objectType": "fulltext", "url": "https://nagoya.repo.nii.ac.jp/record/2002040/files/FMA_JJAP_HfO2_S.Kondo_revised_final_2.pdf"}, "version_id": "3f83c76c-de71-4284-bd2b-0e0b486e739e"}]}, "item_language": {"attribute_name": "言語", "attribute_value_mlt": [{"subitem_language": "eng"}]}, "item_resource_type": {"attribute_name": "資源タイプ", "attribute_value_mlt": [{"resourcetype": "journal article", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "Influence of orientation on the electro-optic effect in epitaxial Y-doped HfO2 ferroelectric thin films", "item_titles": {"attribute_name": "タイトル", "attribute_value_mlt": [{"subitem_title": "Influence of orientation on the electro-optic effect in epitaxial Y-doped HfO2 ferroelectric thin films", "subitem_title_language": "en"}]}, "item_type_id": "40001", "owner": "17", "path": ["322"], "permalink_uri": "http://hdl.handle.net/2237/0002002040", "pubdate": {"attribute_name": "PubDate", "attribute_value": "2022-02-07"}, "publish_date": "2022-02-07", "publish_status": "0", "recid": "2002040", "relation": {}, "relation_version_is_last": true, "title": ["Influence of orientation on the electro-optic effect in epitaxial Y-doped HfO2 ferroelectric thin films"], "weko_shared_id": -1}
Influence of orientation on the electro-optic effect in epitaxial Y-doped HfO2 ferroelectric thin films
http://hdl.handle.net/2237/0002002040
http://hdl.handle.net/2237/0002002040