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  1. F200 未来材料・システム研究所
  2. F200a 雑誌掲載論文
  3. 学術雑誌

Gallium nitride wafer slicing by a sub-nanosecond laser: effect of pulse energy and laser shot spacing

http://hdl.handle.net/2237/0002002103
http://hdl.handle.net/2237/0002002103
d335caf6-e939-46d1-b762-6e1367454500
名前 / ファイル ライセンス アクション
Applied-physics-A-Sena.pdf Applied-physics-A-Sena.pdf (6.2 MB)
Item type itemtype_ver1(1)
公開日 2022-02-18
タイトル
タイトル Gallium nitride wafer slicing by a sub-nanosecond laser: effect of pulse energy and laser shot spacing
言語 en
著者 Sena, Hadi

× Sena, Hadi

en Sena, Hadi

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Tanaka, Atsushi

× Tanaka, Atsushi

en Tanaka, Atsushi

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Wani,Yotaro

× Wani,Yotaro

en Wani,Yotaro

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Aratani, Tomomi

× Aratani, Tomomi

en Aratani, Tomomi

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Yui, Toshiki

× Yui, Toshiki

en Yui, Toshiki

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Kawaguchi, Daisuke

× Kawaguchi, Daisuke

en Kawaguchi, Daisuke

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Sugiura, Ryuji

× Sugiura, Ryuji

en Sugiura, Ryuji

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Honda, Yoshio

× Honda, Yoshio

en Honda, Yoshio

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Igasaki, Yasunori

× Igasaki, Yasunori

en Igasaki, Yasunori

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Amano, Hiroshi

× Amano, Hiroshi

en Amano, Hiroshi

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アクセス権
アクセス権 open access
アクセス権URI http://purl.org/coar/access_right/c_abf2
権利
言語 en
権利情報 This version of the article has been accepted for publication, after peer review (when applicable) and is subject to Springer Nature’s AM terms of use, but is not the Version of Record and does not reflect post-acceptance improvements, or any corrections. The Version of Record is available online at: http://dx.doi.org/10.1007/s00339-021-04808-y
キーワード
主題Scheme Other
主題 Gallium nitride (GaN)
キーワード
主題Scheme Other
主題 Laser slicing
キーワード
主題Scheme Other
主題 Sub-nanosecond laser
キーワード
主題Scheme Other
主題 Liquid crystal on silicon (LCOS)
内容記述
内容記述 Gallium nitride (GaN)-based devices surpass the traditional silicon-based power devices in terms of higher breakdown voltage, faster-switching speed, higher thermal conductivity, and lower on-resistance. However, heteroepitaxial GaN growths like GaN on sapphire are not suitable for power devices due to the threading dislocation densities as high as 108/cm2. Recently, homoepitaxial GaN growth has become possible thanks to the native GaN substrates with dislocation densities in the order of 104/cm2 but the extremely high cost of the GaN substrates makes the homoepitaxy method unacceptable for industrial applications, and the slicing of wafers for reusing them is an effective solution for cost reduction. In this study, we will investigate a route for slicing the GaN single crystal substrate by controlling the laser pulse energy and changing the distance between each laser shot. The 2D and 3D crack propagations are observed by a multiphoton confocal microscope, and the cross section of samples is observed by a scanning electron microscope (SEM). The results showed that two types of radial and lateral cracking occurred depending on the pulse energy and shot pitch, and controlling them was of importance for attaining a smooth GaN substrate slicing. Cross-sectional SEM images showed that at suitable pulse energy and distance, crack propagation could be controlled with respect to the irradiation plane.
言語 en
内容記述タイプ Abstract
出版者
言語 en
出版者 Springer
言語
言語 eng
資源タイプ
資源タイプresource http://purl.org/coar/resource_type/c_6501
タイプ journal article
出版タイプ
出版タイプ AM
出版タイプResource http://purl.org/coar/version/c_ab4af688f83e57aa
関連情報
関連タイプ isVersionOf
識別子タイプ DOI
関連識別子 https://doi.org/10.1007/s00339-021-04808-y
収録物識別子
収録物識別子タイプ PISSN
収録物識別子 0947-8396
書誌情報 en : Applied Physics A

巻 127, 号 9, p. 648, 発行日 2021-08-10
ファイル公開日
日付 2022-08-10
日付タイプ Available
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