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  1. F200 未来材料・システム研究所
  2. F200a 雑誌掲載論文
  3. 学術雑誌

Solvent design aiming at solution property induced surface stability: A case study using SiC solution growth

http://hdl.handle.net/2237/0002002270
http://hdl.handle.net/2237/0002002270
bdbaca00-b589-4ba9-a91e-9ad8084fd5aa
名前 / ファイル ライセンス アクション
revised_manuscript.pdf revised_manuscript.pdf (3.6 MB)
 Download is available from 2024/1/14.
Item type itemtype_ver1(1)
公開日 2022-03-25
タイトル
タイトル Solvent design aiming at solution property induced surface stability: A case study using SiC solution growth
言語 en
著者 Liu, Xinbo

× Liu, Xinbo

en Liu, Xinbo

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Dang, Yifan

× Dang, Yifan

en Dang, Yifan

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Suzuki, Koki

× Suzuki, Koki

en Suzuki, Koki

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Zhu, Can

× Zhu, Can

en Zhu, Can

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Yu, Wancheng

× Yu, Wancheng

en Yu, Wancheng

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Harada, Shunta

× Harada, Shunta

en Harada, Shunta

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Tagawa, Miho

× Tagawa, Miho

en Tagawa, Miho

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Ujihara, Toru

× Ujihara, Toru

en Ujihara, Toru

Search repository
アクセス権
アクセス権 embargoed access
アクセス権URI http://purl.org/coar/access_right/c_f1cf
権利
言語 en
権利情報 © 2022. This manuscript version is made available under the CC-BY-NC-ND 4.0 license http://creativecommons.org/licenses/by-nc-nd/4.0/
キーワード
主題Scheme Other
主題 A1. CFD
キーワード
主題Scheme Other
主題 A1. Diffusion
キーワード
主題Scheme Other
主題 A1. Step kinetic coefficient
キーワード
主題Scheme Other
主題 A1. Step bunching
キーワード
主題Scheme Other
主題 A2. Solvent
内容記述
内容記述 For solution growth of silicon carbide, it is significant to understanding the evolutionary mechanism of step bunching. This study infers that solute’s incorporation into steps and transport together determines step bunching progress. The occurrence of step bunching is due to the depletion of solute in the region with high step density, caused by a high step kinetic coefficient. On the other hand, by promoting the transport of the solute in the solution, the step speed becomes uniform, thereby the step bunching can be prevented. Furthermore, we proposed a non-dimensional Damköhler number for crystal growth in step-flow mode. It correlates incorporation rates with bulk diffusion rates and can build a phase map of growth rates and step bunching stability. Several solvents are located in the phase map, demonstrating the possible usage of the phase map as a pointer for solvent designing.
言語 en
内容記述タイプ Abstract
出版者
言語 en
出版者 Elsevier
言語
言語 eng
資源タイプ
資源タイプresource http://purl.org/coar/resource_type/c_6501
タイプ journal article
出版タイプ
出版タイプ AM
出版タイプResource http://purl.org/coar/version/c_ab4af688f83e57aa
関連情報
関連タイプ isVersionOf
識別子タイプ DOI
関連識別子 https://doi.org/10.1016/j.jcrysgro.2021.126425
収録物識別子
収録物識別子タイプ PISSN
収録物識別子 0022-0248
書誌情報 en : Journal of Crystal Growth

巻 578, p. 126425, 発行日 2022-01-15
ファイル公開日
日付 2024-01-15
日付タイプ Available
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