Item type |
itemtype_ver1(1) |
公開日 |
2022-09-14 |
タイトル |
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タイトル |
Inter- to intra-layer resistivity anisotropy of NdFeAs(O,H) with various hydrogen concentrations |
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言語 |
en |
著者 |
Chen, M. Y.
Iida, K.
Kondo, K.
Hänisch, J.
Hatano, T.
Ikuta, H.
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アクセス権 |
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アクセス権 |
open access |
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アクセス権URI |
http://purl.org/coar/access_right/c_abf2 |
権利 |
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言語 |
en |
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権利情報 |
© 2022 American Physical Society |
内容記述 |
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内容記述タイプ |
Abstract |
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内容記述 |
With molecular beam epitaxy and a topotactic chemical reaction, we prepared NdFeAs(O,H) epitaxial thin films with various hydrogen concentrations on 5° vicinal-cut MgO substrates. By measuring the resistivities along the longitudinal and transversal directions, the ab-plane and the c-axis resistivities (ρab and ρc) were obtained. The resistivity anisotropy γρ≡ρc/ρab of NdFeAs(O,H) with various hydrogen concentrations was compared with that of NdFeAs(O,F). At the H concentrations which led to superconducting transition temperatures Tc over 40 K, γρ recorded ∼100–150 at 50 K. On the other hand, a low γρ value of 9 was observed with the highest-doped sample. The exponent β of the ab-plane resistivity obtained by fitting a power-law expression ρab(T)=ρ0+AT^β to the data was close to unity down to a low temperature in the vicinity where the second antiferromagnetic phase locates, which may be related to the quantum critical point discussed at the overdoped side of the phase diagram. |
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言語 |
en |
出版者 |
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出版者 |
American Physical Society |
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言語 |
en |
言語 |
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言語 |
eng |
資源タイプ |
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資源タイプ識別子 |
http://purl.org/coar/resource_type/c_6501 |
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資源タイプ |
journal article |
出版タイプ |
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出版タイプ |
VoR |
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出版タイプResource |
http://purl.org/coar/version/c_970fb48d4fbd8a85 |
関連情報 |
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関連タイプ |
isVersionOf |
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識別子タイプ |
DOI |
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関連識別子 |
https://doi.org/10.1103/PhysRevMaterials.6.054802 |
収録物識別子 |
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収録物識別子タイプ |
EISSN |
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収録物識別子 |
2475-9953 |
書誌情報 |
en : Physical Review Materials
巻 6,
号 5,
p. 054802,
発行日 2022-05-02
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