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  1. F200 未来材料・システム研究所
  2. F200a 雑誌掲載論文
  3. 学術雑誌

Local stress control to suppress dislocation generation for pseudomorphically grown AlGaN UV-C laser diodes

http://hdl.handle.net/2237/0002003985
http://hdl.handle.net/2237/0002003985
a5d390f0-0f5b-4c10-828f-0b32f2bd33f4
名前 / ファイル ライセンス アクション
manuscript_kushi.pdf manuscript_kushi.pdf (4.2 MB)
Item type itemtype_ver1(1)
公開日 2022-11-24
タイトル
タイトル Local stress control to suppress dislocation generation for pseudomorphically grown AlGaN UV-C laser diodes
言語 en
著者 Kushimoto, Maki

× Kushimoto, Maki

en Kushimoto, Maki

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Zhang, Ziyi

× Zhang, Ziyi

en Zhang, Ziyi

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Yoshikawa, Akira

× Yoshikawa, Akira

en Yoshikawa, Akira

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Aoto, Koji

× Aoto, Koji

en Aoto, Koji

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Honda, Yoshio

× Honda, Yoshio

en Honda, Yoshio

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Sasaoka, Chiaki

× Sasaoka, Chiaki

en Sasaoka, Chiaki

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Schowalter, Leo J.

× Schowalter, Leo J.

en Schowalter, Leo J.

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Amano, Hiroshi

× Amano, Hiroshi

en Amano, Hiroshi

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アクセス権
アクセス権 open access
アクセス権URI http://purl.org/coar/access_right/c_abf2
権利
言語 en
権利情報 “The following article has been accepted by [Applied Physics Letters]. After it is published, it will be found at "https://doi.org/10.1063/5.0124512”.
内容記述
内容記述 Previously reported UV-C laser diodes (LD) structures have been subject to design constraints owing to dark line defects at the edge of the mesa stripe after device fabrication. To address this issue, a detailed analysis revealed that the dark line defects were dislocations generated by local residual shear stresses associated with mesa formation on highly strained epitaxial layers. A technique for controlling the local concentration of shear stress, using a sloped mesa geometry, was proposed based on the insights gained by modeling the stress distribution at the edge of the mesa stripe. Experimental results showed that this technique succeeded in completely suppressing the emergence of dark-line defects. This technique will be useful in improving the performance of pseudomorphic AlGaN/AlN-based optoelectronic device including UV-C LDs.
言語 en
内容記述タイプ Abstract
出版者
言語 en
出版者 AIP Publishing
言語
言語 eng
資源タイプ
資源タイプresource http://purl.org/coar/resource_type/c_6501
タイプ journal article
出版タイプ
出版タイプ AM
出版タイプResource http://purl.org/coar/version/c_ab4af688f83e57aa
関連情報
関連タイプ isVersionOf
識別子タイプ DOI
関連識別子 https://doi.org/10.1063/5.0124512
収録物識別子
収録物識別子タイプ PISSN
収録物識別子 0003-6951
書誌情報 en : Applied Physics Letters

発行日 2022
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