| Item type |
itemtype_ver1(1) |
| 公開日 |
2022-11-24 |
| タイトル |
|
|
タイトル |
Local stress control to suppress dislocation generation for pseudomorphically grown AlGaN UV-C laser diodes |
|
言語 |
en |
| 著者 |
Kushimoto, Maki
Zhang, Ziyi
Yoshikawa, Akira
Aoto, Koji
Honda, Yoshio
Sasaoka, Chiaki
Schowalter, Leo J.
Amano, Hiroshi
|
| アクセス権 |
|
|
アクセス権 |
open access |
|
アクセス権URI |
http://purl.org/coar/access_right/c_abf2 |
| 権利 |
|
|
言語 |
en |
|
権利情報 |
“The following article has been accepted by [Applied Physics Letters]. After it is published, it will be found at "https://doi.org/10.1063/5.0124512”. |
| 内容記述 |
|
|
内容記述タイプ |
Abstract |
|
内容記述 |
Previously reported UV-C laser diodes (LD) structures have been subject to design constraints owing to dark line defects at the edge of the mesa stripe after device fabrication. To address this issue, a detailed analysis revealed that the dark line defects were dislocations generated by local residual shear stresses associated with mesa formation on highly strained epitaxial layers. A technique for controlling the local concentration of shear stress, using a sloped mesa geometry, was proposed based on the insights gained by modeling the stress distribution at the edge of the mesa stripe. Experimental results showed that this technique succeeded in completely suppressing the emergence of dark-line defects. This technique will be useful in improving the performance of pseudomorphic AlGaN/AlN-based optoelectronic device including UV-C LDs. |
|
言語 |
en |
| 出版者 |
|
|
出版者 |
AIP Publishing |
|
言語 |
en |
| 言語 |
|
|
言語 |
eng |
| 資源タイプ |
|
|
資源タイプresource |
http://purl.org/coar/resource_type/c_6501 |
|
タイプ |
journal article |
| 出版タイプ |
|
|
出版タイプ |
AM |
|
出版タイプResource |
http://purl.org/coar/version/c_ab4af688f83e57aa |
| 関連情報 |
|
|
関連タイプ |
isVersionOf |
|
|
識別子タイプ |
DOI |
|
|
関連識別子 |
https://doi.org/10.1063/5.0124512 |
| 収録物識別子 |
|
|
収録物識別子タイプ |
PISSN |
|
収録物識別子 |
0003-6951 |
| 書誌情報 |
en : Applied Physics Letters
巻 121,
号 22,
p. 222101,
発行日 2022-11
|
manuscript_kushi.pdf (4.2 MB)
