{"_buckets": {"deposit": "3bf57985-c3e8-4c35-8553-f314d626642b"}, "_deposit": {"id": "21333", "owners": [], "pid": {"revision_id": 0, "type": "depid", "value": "21333"}, "status": "published"}, "_oai": {"id": "oai:nagoya.repo.nii.ac.jp:00021333"}, "item_10_alternative_title_19": {"attribute_name": "\u305d\u306e\u4ed6\u306e\u8a00\u8a9e\u306e\u30bf\u30a4\u30c8\u30eb", "attribute_value_mlt": [{"subitem_alternative_title": "Thermally Assisted Switching on Magnetic Tunnel Junctions with TbFe Layer"}]}, "item_10_biblio_info_6": {"attribute_name": "\u66f8\u8a8c\u60c5\u5831", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2011-03", "bibliographicIssueDateType": "Issued"}, "bibliographicIssueNumber": "438", "bibliographicPageEnd": "51", "bibliographicPageStart": "47", "bibliographicVolumeNumber": "110", "bibliographic_titles": [{"bibliographic_title": "\u96fb\u5b50\u60c5\u5831\u901a\u4fe1\u5b66\u4f1a\u6280\u8853\u7814\u7a76\u5831\u544a. MR, \u78c1\u6c17\u8a18\u9332"}]}]}, "item_10_description_4": {"attribute_name": "\u6284\u9332", "attribute_value_mlt": [{"subitem_description": "\u5e0c\u571f\u985e-\u9077\u79fb\u91d1\u5c5e(RE-TM)\u819c\u3092\u30e1\u30e2\u30ea\u30fc\u5c64\u3068\u3057\u305f\u5782\u76f4\u78c1\u5316\u578b\u306eTbFe/CoFeB/Al-O/[Co/Pd]_6\u78c1\u6c17\u30c8\u30f3\u30cd\u30eb\u63a5\u5408\u3092\u4f5c\u6210\u3057,\u305d\u306e\u78c1\u6c17\u62b5\u6297(MR)\u7279\u6027\u304a\u3088\u3073\u969c\u58c1\u3078\u5370\u53ef\u3057\u305f\u96fb\u6d41\u30d1\u30eb\u30b9\u306b\u3088\u308a\u767a\u751f\u3059\u308b\u30b8\u30e5\u30fc\u30eb\u71b1\u3092\u7528\u3044\u305f\u71b1\u30a2\u30b7\u30b9\u30c8\u78c1\u5316\u53cd\u8ee2\u3092\u78ba\u8a8d\u3057\u305f.Al-O\u5c64\u539a0.8 nm\u306eMTJ\u7d20\u5b50(\u7d20\u5b50\u30b5\u30a4\u30ba20\u03bcm x 20\u03bcm)\u3067\u306f\u4f4e\u30d0\u30a4\u30a2\u30b9(40mV)\u3067\u9762\u7a4d\u62b5\u62976 k\u03a9\u03bcm^2\u7a0b\u5ea6,MR\u6bd410%,TbFe\u5c64\u306e\u4fdd\u78c1\u529b4kOe\u7a0b\u5ea6\u304c\u5f97\u3089\u308c\u305f.\u4e00\u65b9,\u9ad8\u30d0\u30a4\u30a2\u30b9(350 mv)\u3067\u306f,\u969c\u58c1\u3078\u306e\u901a\u96fb\u306b\u3088\u308a\u767a\u751f\u3059\u308b\u30b8\u30e5\u30fc\u30eb\u71b1\u306b\u3088\u308aTbFe\u5c64\u306e\u4fdd\u78c1\u529b\u304c2kOe\u7a0b\u5ea6\u307e\u3067\u6e1b\u5c11\u3057\u305f.\u78c1\u754c\u4e2d\u3067\u96fb\u6d41\u30d1\u30eb\u30b9\u3092\u5370\u53ef\u5f8c\u306e\u62b5\u6297\u5024\u304b\u3089,\u71b1\u30a2\u30b7\u30b9\u30c8\u78c1\u5316\u53cd\u8ee2\u306b\u5fc5\u8981\u306a\u96fb\u529b\u5bc6\u5ea6\u306e\u5916\u90e8\u78c1\u754c\u4f9d\u5b58\u6027\u3092\u6e2c\u5b9a\u3057\u305f.\u78c1\u5316\u53cd\u8ee2\u306b\u5fc5\u8981\u306a\u96fb\u529b\u5bc6\u5ea6\u306f,\u78c1\u754c\u306e\u6e1b\u5c11\u306b\u4f34\u3044\u5358\u8abf\u306b\u5897\u52a0\u3057,100Oe\u7a0b\u5ea6\u306e\u78c1\u754c\u3067\u306f80\u03bcW/\u03bcm^2\u3068\u898b\u7a4d\u3082\u3089\u308c\u305f.\u3053\u308c\u3088\u308a,TbFe\u819c\u3092\u30e1\u30e2\u30ea\u30fc\u5c64\u3068\u3057\u3066\u7528\u3044\u305fMTJ\u7d20\u5b50\u3067\u306f\u4f4e\u96fb\u529b\u3067\u306e\u71b1\u30a2\u30b7\u30b9\u30c8\u78c1\u5316\u53cd\u8ee2\u304c\u53ef\u80fd\u3067\u3042\u308b\u3068\u3044\u3046\u7d50\u8ad6\u3092\u5f97\u305f.We fabricated perpendicular magnetized magnetic tunnel junctions (MTJs) with a rare earth-transition metal (RE-TM) alloy whose stack is TbFe/CoFeB/Al-O/[Co/Pd]_6, and investigated their magneto-resistance (MR) property and magnetization switching assisted by the Joule heat due to a current pulse through the Al-O junction. The MTJ with Al-O thickness of 0.8 nm and areal size of 20\u03bcm x 20\u03bcm exhibited resistance area product RA of 6 k\u03a9\u03bcm^2, MR ratio of 10%, and coercivity of TbFe layer of 4 kOe at a bias voltage of 40 mV. The coercivity of TbFe layer decreased down to 2 kOe at a bias voltage of 350 mV because of the Joule heat generated in the Al-O junction. From the MTJ resistance after the application of heating pulse, we measured the applied field dependence of the power density necessary for the thermally assisted magnetization switching. The power density was confirmed to increase with decreasing the applied field, and was estimated to be 80\u03bcW/\u03bcm^2 at the external field of 100 Oe. 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