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  1. F200 未来材料・システム研究所
  2. F200a 雑誌掲載論文
  3. 学術雑誌

TbFe層を用いた垂直磁化MTJの熱アシスト磁化反転

http://hdl.handle.net/2237/23476
http://hdl.handle.net/2237/23476
83ed74e1-32e1-4e05-99f9-fc490e794aac
名前 / ファイル ライセンス アクション
110008688904.pdf 110008688904.pdf (701.8 kB)
Item type 学術雑誌論文 / Journal Article(1)
公開日 2016-02-18
タイトル
タイトル TbFe層を用いた垂直磁化MTJの熱アシスト磁化反転
言語 ja
その他のタイトル
その他のタイトル Thermally Assisted Switching on Magnetic Tunnel Junctions with TbFe Layer
言語 en
著者 野田, 晃司

× 野田, 晃司

WEKO 61521

ja 野田, 晃司

Search repository
藤澤, 佑樹

× 藤澤, 佑樹

WEKO 61522

ja 藤澤, 佑樹

Search repository
加藤, 剛志

× 加藤, 剛志

WEKO 61523

ja 加藤, 剛志

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岩田, 聡

× 岩田, 聡

WEKO 61524

ja 岩田, 聡

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綱島, 滋

× 綱島, 滋

WEKO 61525

ja 綱島, 滋

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NODA, Koji

× NODA, Koji

WEKO 61526

en NODA, Koji

Search repository
FUJISAWA, Yuki

× FUJISAWA, Yuki

WEKO 61527

en FUJISAWA, Yuki

Search repository
KATO, Takeshi

× KATO, Takeshi

WEKO 61528

en KATO, Takeshi

Search repository
IWATA, Satoshi

× IWATA, Satoshi

WEKO 61529

en IWATA, Satoshi

Search repository
TSUNASHIMA, Shigeru

× TSUNASHIMA, Shigeru

WEKO 61530

en TSUNASHIMA, Shigeru

Search repository
アクセス権
アクセス権 open access
アクセス権URI http://purl.org/coar/access_right/c_abf2
権利
言語 ja
権利情報 (c)一般社団法人電子情報通信学会 本文データは学協会の許諾に基づきCiNiiから複製したものである
キーワード
主題Scheme Other
主題 熱アシスト磁化反転
キーワード
主題Scheme Other
主題 MTJ
キーワード
主題Scheme Other
主題 希土類-遷移金属
キーワード
主題Scheme Other
主題 TbFe
キーワード
主題Scheme Other
主題 Thermally assisted switching
キーワード
主題Scheme Other
主題 RE-TM
抄録
内容記述 希土類-遷移金属(RE-TM)膜をメモリー層とした垂直磁化型のTbFe/CoFeB/Al-O/[Co/Pd]_6磁気トンネル接合を作成し,その磁気抵抗(MR)特性および障壁へ印可した電流パルスにより発生するジュール熱を用いた熱アシスト磁化反転を確認した.Al-O層厚0.8 nmのMTJ素子(素子サイズ20μm x 20μm)では低バイアス(40mV)で面積抵抗6 kΩμm^2程度,MR比10%,TbFe層の保磁力4kOe程度が得られた.一方,高バイアス(350 mv)では,障壁への通電により発生するジュール熱によりTbFe層の保磁力が2kOe程度まで減少した.磁界中で電流パルスを印可後の抵抗値から,熱アシスト磁化反転に必要な電力密度の外部磁界依存性を測定した.磁化反転に必要な電力密度は,磁界の減少に伴い単調に増加し,100Oe程度の磁界では80μW/μm^2と見積もられた.これより,TbFe膜をメモリー層として用いたMTJ素子では低電力での熱アシスト磁化反転が可能であるという結論を得た.
言語 ja
内容記述タイプ Abstract
抄録
内容記述 We fabricated perpendicular magnetized magnetic tunnel junctions (MTJs) with a rare earth-transition metal (RE-TM) alloy whose stack is TbFe/CoFeB/Al-O/[Co/Pd]_6, and investigated their magneto-resistance (MR) property and magnetization switching assisted by the Joule heat due to a current pulse through the Al-O junction. The MTJ with Al-O thickness of 0.8 nm and areal size of 20μm x 20μm exhibited resistance area product RA of 6 kΩμm^2, MR ratio of 10%, and coercivity of TbFe layer of 4 kOe at a bias voltage of 40 mV. The coercivity of TbFe layer decreased down to 2 kOe at a bias voltage of 350 mV because of the Joule heat generated in the Al-O junction. From the MTJ resistance after the application of heating pulse, we measured the applied field dependence of the power density necessary for the thermally assisted magnetization switching. The power density was confirmed to increase with decreasing the applied field, and was estimated to be 80μW/μm^2 at the external field of 100 Oe. From this result, it is concluded that the MTJ with RE-TM alloy is effective for low power thermally assisted switching.
言語 en
内容記述タイプ Abstract
出版者
言語 ja
出版者 一般社団法人電子情報通信学会
言語
言語 jpn
資源タイプ
資源タイプresource http://purl.org/coar/resource_type/c_6501
タイプ journal article
出版タイプ
出版タイプ VoR
出版タイプResource http://purl.org/coar/version/c_970fb48d4fbd8a85
関連情報
関連タイプ isVersionOf
識別子タイプ URI
関連識別子 http://ci.nii.ac.jp/naid/110008688904/
ISSN
収録物識別子タイプ PISSN
収録物識別子 0913-5685
書誌情報 ja : 電子情報通信学会技術研究報告. MR, 磁気記録

巻 110, 号 438, p. 47-51, 発行日 2011-03
著者版フラグ
値 publisher
URI
識別子 http://ci.nii.ac.jp/naid/110008688904/
識別子タイプ URI
URI
識別子 http://hdl.handle.net/2237/23476
識別子タイプ HDL
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