ログイン
言語:

WEKO3

  • トップ
  • ランキング
To
lat lon distance
To

Field does not validate



インデックスリンク

インデックスツリー

メールアドレスを入力してください。

WEKO

One fine body…

WEKO

One fine body…

アイテム

{"_buckets": {"deposit": "10209b1e-dcda-4dc4-9b8d-22d225458828"}, "_deposit": {"id": "21335", "owners": [], "pid": {"revision_id": 0, "type": "depid", "value": "21335"}, "status": "published"}, "_oai": {"id": "oai:nagoya.repo.nii.ac.jp:00021335", "sets": ["675"]}, "author_link": ["61541", "61542", "61543", "61544", "61545", "61546", "61547", "61548", "61549", "61550"], "item_10_alternative_title_19": {"attribute_name": "その他のタイトル", "attribute_value_mlt": [{"subitem_alternative_title": "Thermally assisted switching on magnetic tunnel junctions with perpendicular magnetized TbFe memory layer", "subitem_alternative_title_language": "en"}]}, "item_10_biblio_info_6": {"attribute_name": "書誌情報", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2013-03", "bibliographicIssueDateType": "Issued"}, "bibliographicIssueNumber": "452", "bibliographicPageEnd": "37", "bibliographicPageStart": "33", "bibliographicVolumeNumber": "112", "bibliographic_titles": [{"bibliographic_title": "電子情報通信学会技術研究報告. MR, 磁気記録", "bibliographic_titleLang": "ja"}]}]}, "item_10_description_4": {"attribute_name": "抄録", "attribute_value_mlt": [{"subitem_description": "大きな垂直磁気異方性を有し,低キュリー温度のTbFeをメモリー層とした[Co/Pd]/MgO /TbFe垂直磁気トンネル接合を作成し,その磁気抵抗(MR)特性およびトンネル障壁へ電流パルスを印加することで発生するジュール熱による熱アシスト磁化反転を確認した.MgO 1.4nmの磁気トンネル接合素子では低バイアス(40mV)でMR比9%,面積抵抗342 Ωum^2程度の値が得られた.またTbFe層の室温での保磁力は1.5 kOe以上であるが,トンネル障壁にパルス幅100 msecの電流パルスを印加することで発生するジュール熱を利用し,100 Oeの磁界で磁化反転を観測した.", "subitem_description_language": "ja", "subitem_description_type": "Abstract"}, {"subitem_description": "Perpendicular magnetized [Co/Pd]/MgO / TbFe tunnel junctions whose memory layer, TbFe, exhibits large perpendicular anisotropy and low Curie temperature were fabricated, and their magneto resistance (MR)properties and thermally assisted magnetization switching utilizing Joule heat generated by a current pulse through the junction were confirmed. The [Co/Pd]/MgO / TbFe junction with a barrier thickness of 1.4 nm exhibited an areal resistance of 342 Ωum^2 and an MR ratio of 9 %at a low bias voltage of 40 mV. The coercivity of TbFe memory layer was more than 1 .5 kOe at room temperature, however the magnetization of the TbFe switched at an external field of 100 Oe when the current pulse with a pulse width 1 00 msec was applied through the junction, which results from Joule heat generated by the current pulse.", "subitem_description_language": "en", "subitem_description_type": "Abstract"}]}, "item_10_identifier_60": {"attribute_name": "URI", "attribute_value_mlt": [{"subitem_identifier_type": "URI", "subitem_identifier_uri": "http://ci.nii.ac.jp/naid/110009712671/"}, {"subitem_identifier_type": "HDL", "subitem_identifier_uri": "http://hdl.handle.net/2237/23479"}]}, "item_10_publisher_32": {"attribute_name": "出版者", "attribute_value_mlt": [{"subitem_publisher": "一般社団法人電子情報通信学会", "subitem_publisher_language": "ja"}]}, "item_10_relation_43": {"attribute_name": "関連情報", "attribute_value_mlt": [{"subitem_relation_type": "isVersionOf", "subitem_relation_type_id": {"subitem_relation_type_id_text": "http://ci.nii.ac.jp/naid/110009712671/", "subitem_relation_type_select": "URI"}}]}, "item_10_rights_12": {"attribute_name": "権利", "attribute_value_mlt": [{"subitem_rights": "(c)一般社団法人電子情報通信学会 本文データは学協会の許諾に基づきCiNiiから複製したものである", "subitem_rights_language": "ja"}]}, "item_10_select_15": {"attribute_name": "著者版フラグ", "attribute_value_mlt": [{"subitem_select_item": "publisher"}]}, "item_10_source_id_7": {"attribute_name": "ISSN", "attribute_value_mlt": [{"subitem_source_identifier": "0913-5685", "subitem_source_identifier_type": "PISSN"}]}, "item_1615787544753": {"attribute_name": "出版タイプ", "attribute_value_mlt": [{"subitem_version_resource": "http://purl.org/coar/version/c_970fb48d4fbd8a85", "subitem_version_type": "VoR"}]}, "item_access_right": {"attribute_name": "アクセス権", "attribute_value_mlt": [{"subitem_access_right": "open access", "subitem_access_right_uri": "http://purl.org/coar/access_right/c_abf2"}]}, "item_creator": {"attribute_name": "著者", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "藤澤, 佑樹", "creatorNameLang": "ja"}], "nameIdentifiers": [{"nameIdentifier": "61541", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "吉川, 大貴", "creatorNameLang": "ja"}], "nameIdentifiers": [{"nameIdentifier": "61542", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "加藤, 剛志", "creatorNameLang": "ja"}], "nameIdentifiers": [{"nameIdentifier": "61543", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "岩田, 聡", "creatorNameLang": "ja"}], "nameIdentifiers": [{"nameIdentifier": "61544", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "綱島, 滋", "creatorNameLang": "ja"}], "nameIdentifiers": [{"nameIdentifier": "61545", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Fujisawa, Yuki", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "61546", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Yoshikawa, Daiki", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "61547", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Kato, Takeshi", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "61548", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Iwata, Satoshi", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "61549", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Tsunashima, Shigeru", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "61550", "nameIdentifierScheme": "WEKO"}]}]}, "item_files": {"attribute_name": "ファイル情報", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2018-02-21"}], "displaytype": "detail", "download_preview_message": "", "file_order": 0, "filename": "110009712671.pdf", "filesize": [{"value": "642.7 kB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "licensetype": "license_note", "mimetype": "application/pdf", "size": 642700.0, "url": {"label": "110009712671.pdf", "objectType": "fulltext", "url": "https://nagoya.repo.nii.ac.jp/record/21335/files/110009712671.pdf"}, "version_id": "1ce1959e-c6eb-4c2f-b772-83fffd12df6c"}]}, "item_keyword": {"attribute_name": "キーワード", "attribute_value_mlt": [{"subitem_subject": "熱アシスト磁化反転", "subitem_subject_scheme": "Other"}, {"subitem_subject": "MTJ", "subitem_subject_scheme": "Other"}, {"subitem_subject": "希土類-遷移金属", "subitem_subject_scheme": "Other"}, {"subitem_subject": "TbFe", "subitem_subject_scheme": "Other"}, {"subitem_subject": "Thermally assisted switching", "subitem_subject_scheme": "Other"}, {"subitem_subject": "RE-TM", "subitem_subject_scheme": "Other"}]}, "item_language": {"attribute_name": "言語", "attribute_value_mlt": [{"subitem_language": "jpn"}]}, "item_resource_type": {"attribute_name": "資源タイプ", "attribute_value_mlt": [{"resourcetype": "journal article", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "TbFe垂直磁化膜をメモリー層とした磁気トンネル接合の熱アシスト磁化反転", "item_titles": {"attribute_name": "タイトル", "attribute_value_mlt": [{"subitem_title": "TbFe垂直磁化膜をメモリー層とした磁気トンネル接合の熱アシスト磁化反転", "subitem_title_language": "ja"}]}, "item_type_id": "10", "owner": "1", "path": ["675"], "permalink_uri": "http://hdl.handle.net/2237/23479", "pubdate": {"attribute_name": "PubDate", "attribute_value": "2016-02-18"}, "publish_date": "2016-02-18", "publish_status": "0", "recid": "21335", "relation": {}, "relation_version_is_last": true, "title": ["TbFe垂直磁化膜をメモリー層とした磁気トンネル接合の熱アシスト磁化反転"], "weko_shared_id": -1}
  1. F200 未来材料・システム研究所
  2. F200a 雑誌掲載論文
  3. 学術雑誌

TbFe垂直磁化膜をメモリー層とした磁気トンネル接合の熱アシスト磁化反転

http://hdl.handle.net/2237/23479
http://hdl.handle.net/2237/23479
d100b028-d66b-4b9a-a8b0-18d918b2a798
名前 / ファイル ライセンス アクション
110009712671.pdf 110009712671.pdf (642.7 kB)
Item type 学術雑誌論文 / Journal Article(1)
公開日 2016-02-18
タイトル
タイトル TbFe垂直磁化膜をメモリー層とした磁気トンネル接合の熱アシスト磁化反転
言語 ja
その他のタイトル
その他のタイトル Thermally assisted switching on magnetic tunnel junctions with perpendicular magnetized TbFe memory layer
言語 en
著者 藤澤, 佑樹

× 藤澤, 佑樹

WEKO 61541

ja 藤澤, 佑樹

Search repository
吉川, 大貴

× 吉川, 大貴

WEKO 61542

ja 吉川, 大貴

Search repository
加藤, 剛志

× 加藤, 剛志

WEKO 61543

ja 加藤, 剛志

Search repository
岩田, 聡

× 岩田, 聡

WEKO 61544

ja 岩田, 聡

Search repository
綱島, 滋

× 綱島, 滋

WEKO 61545

ja 綱島, 滋

Search repository
Fujisawa, Yuki

× Fujisawa, Yuki

WEKO 61546

en Fujisawa, Yuki

Search repository
Yoshikawa, Daiki

× Yoshikawa, Daiki

WEKO 61547

en Yoshikawa, Daiki

Search repository
Kato, Takeshi

× Kato, Takeshi

WEKO 61548

en Kato, Takeshi

Search repository
Iwata, Satoshi

× Iwata, Satoshi

WEKO 61549

en Iwata, Satoshi

Search repository
Tsunashima, Shigeru

× Tsunashima, Shigeru

WEKO 61550

en Tsunashima, Shigeru

Search repository
アクセス権
アクセス権 open access
アクセス権URI http://purl.org/coar/access_right/c_abf2
権利
言語 ja
権利情報 (c)一般社団法人電子情報通信学会 本文データは学協会の許諾に基づきCiNiiから複製したものである
キーワード
主題Scheme Other
主題 熱アシスト磁化反転
キーワード
主題Scheme Other
主題 MTJ
キーワード
主題Scheme Other
主題 希土類-遷移金属
キーワード
主題Scheme Other
主題 TbFe
キーワード
主題Scheme Other
主題 Thermally assisted switching
キーワード
主題Scheme Other
主題 RE-TM
抄録
内容記述 大きな垂直磁気異方性を有し,低キュリー温度のTbFeをメモリー層とした[Co/Pd]/MgO /TbFe垂直磁気トンネル接合を作成し,その磁気抵抗(MR)特性およびトンネル障壁へ電流パルスを印加することで発生するジュール熱による熱アシスト磁化反転を確認した.MgO 1.4nmの磁気トンネル接合素子では低バイアス(40mV)でMR比9%,面積抵抗342 Ωum^2程度の値が得られた.またTbFe層の室温での保磁力は1.5 kOe以上であるが,トンネル障壁にパルス幅100 msecの電流パルスを印加することで発生するジュール熱を利用し,100 Oeの磁界で磁化反転を観測した.
言語 ja
内容記述タイプ Abstract
抄録
内容記述 Perpendicular magnetized [Co/Pd]/MgO / TbFe tunnel junctions whose memory layer, TbFe, exhibits large perpendicular anisotropy and low Curie temperature were fabricated, and their magneto resistance (MR)properties and thermally assisted magnetization switching utilizing Joule heat generated by a current pulse through the junction were confirmed. The [Co/Pd]/MgO / TbFe junction with a barrier thickness of 1.4 nm exhibited an areal resistance of 342 Ωum^2 and an MR ratio of 9 %at a low bias voltage of 40 mV. The coercivity of TbFe memory layer was more than 1 .5 kOe at room temperature, however the magnetization of the TbFe switched at an external field of 100 Oe when the current pulse with a pulse width 1 00 msec was applied through the junction, which results from Joule heat generated by the current pulse.
言語 en
内容記述タイプ Abstract
出版者
言語 ja
出版者 一般社団法人電子情報通信学会
言語
言語 jpn
資源タイプ
資源タイプresource http://purl.org/coar/resource_type/c_6501
タイプ journal article
出版タイプ
出版タイプ VoR
出版タイプResource http://purl.org/coar/version/c_970fb48d4fbd8a85
関連情報
関連タイプ isVersionOf
識別子タイプ URI
関連識別子 http://ci.nii.ac.jp/naid/110009712671/
ISSN
収録物識別子タイプ PISSN
収録物識別子 0913-5685
書誌情報 ja : 電子情報通信学会技術研究報告. MR, 磁気記録

巻 112, 号 452, p. 33-37, 発行日 2013-03
著者版フラグ
値 publisher
URI
識別子 http://ci.nii.ac.jp/naid/110009712671/
識別子タイプ URI
URI
識別子 http://hdl.handle.net/2237/23479
識別子タイプ HDL
戻る
0
views
See details
Views

Versions

Ver.1 2021-03-01 15:25:50.137520
Show All versions

Share

Mendeley Twitter Facebook Print Addthis

Cite as

エクスポート

OAI-PMH
  • OAI-PMH JPCOAR
  • OAI-PMH DublinCore
  • OAI-PMH DDI
Other Formats
  • JSON
  • BIBTEX

Confirm


Powered by WEKO3


Powered by WEKO3