{"_buckets": {"deposit": "10209b1e-dcda-4dc4-9b8d-22d225458828"}, "_deposit": {"id": "21335", "owners": [], "pid": {"revision_id": 0, "type": "depid", "value": "21335"}, "status": "published"}, "_oai": {"id": "oai:nagoya.repo.nii.ac.jp:00021335"}, "item_10_alternative_title_19": {"attribute_name": "\u305d\u306e\u4ed6\u306e\u8a00\u8a9e\u306e\u30bf\u30a4\u30c8\u30eb", "attribute_value_mlt": [{"subitem_alternative_title": "Thermally assisted switching on magnetic tunnel junctions with perpendicular magnetized TbFe memory layer"}]}, "item_10_biblio_info_6": {"attribute_name": "\u66f8\u8a8c\u60c5\u5831", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2013-03", "bibliographicIssueDateType": "Issued"}, "bibliographicIssueNumber": "452", "bibliographicPageEnd": "37", "bibliographicPageStart": "33", "bibliographicVolumeNumber": "112", "bibliographic_titles": [{"bibliographic_title": "\u96fb\u5b50\u60c5\u5831\u901a\u4fe1\u5b66\u4f1a\u6280\u8853\u7814\u7a76\u5831\u544a. MR, \u78c1\u6c17\u8a18\u9332"}]}]}, "item_10_description_4": {"attribute_name": "\u6284\u9332", "attribute_value_mlt": [{"subitem_description": "\u5927\u304d\u306a\u5782\u76f4\u78c1\u6c17\u7570\u65b9\u6027\u3092\u6709\u3057,\u4f4e\u30ad\u30e5\u30ea\u30fc\u6e29\u5ea6\u306eTbFe\u3092\u30e1\u30e2\u30ea\u30fc\u5c64\u3068\u3057\u305f[Co/Pd]/MgO /TbFe\u5782\u76f4\u78c1\u6c17\u30c8\u30f3\u30cd\u30eb\u63a5\u5408\u3092\u4f5c\u6210\u3057,\u305d\u306e\u78c1\u6c17\u62b5\u6297(MR)\u7279\u6027\u304a\u3088\u3073\u30c8\u30f3\u30cd\u30eb\u969c\u58c1\u3078\u96fb\u6d41\u30d1\u30eb\u30b9\u3092\u5370\u52a0\u3059\u308b\u3053\u3068\u3067\u767a\u751f\u3059\u308b\u30b8\u30e5\u30fc\u30eb\u71b1\u306b\u3088\u308b\u71b1\u30a2\u30b7\u30b9\u30c8\u78c1\u5316\u53cd\u8ee2\u3092\u78ba\u8a8d\u3057\u305f.MgO 1.4nm\u306e\u78c1\u6c17\u30c8\u30f3\u30cd\u30eb\u63a5\u5408\u7d20\u5b50\u3067\u306f\u4f4e\u30d0\u30a4\u30a2\u30b9(40mV)\u3067MR\u6bd49%,\u9762\u7a4d\u62b5\u6297342 \u03a9um^2\u7a0b\u5ea6\u306e\u5024\u304c\u5f97\u3089\u308c\u305f.\u307e\u305fTbFe\u5c64\u306e\u5ba4\u6e29\u3067\u306e\u4fdd\u78c1\u529b\u306f1.5 kOe\u4ee5\u4e0a\u3067\u3042\u308b\u304c,\u30c8\u30f3\u30cd\u30eb\u969c\u58c1\u306b\u30d1\u30eb\u30b9\u5e45100 msec\u306e\u96fb\u6d41\u30d1\u30eb\u30b9\u3092\u5370\u52a0\u3059\u308b\u3053\u3068\u3067\u767a\u751f\u3059\u308b\u30b8\u30e5\u30fc\u30eb\u71b1\u3092\u5229\u7528\u3057,100 Oe\u306e\u78c1\u754c\u3067\u78c1\u5316\u53cd\u8ee2\u3092\u89b3\u6e2c\u3057\u305f.Perpendicular magnetized [Co/Pd]/MgO / TbFe tunnel junctions whose memory layer, TbFe, exhibits large perpendicular anisotropy and low Curie temperature were fabricated, and their magneto resistance (MR)properties and thermally assisted magnetization switching utilizing Joule heat generated by a current pulse through the junction were confirmed. The [Co/Pd]/MgO / TbFe junction with a barrier thickness of 1.4 nm exhibited an areal resistance of 342 \u03a9um^2 and an MR ratio of 9 %at a low bias voltage of 40 mV. The coercivity of TbFe memory layer was more than 1 .5 kOe at room temperature, however the magnetization of the TbFe switched at an external field of 100 Oe when the current pulse with a pulse width 1 00 msec was applied through the junction, which results from Joule heat generated by the current pulse.", "subitem_description_type": "Abstract"}]}, "item_10_identifier_60": {"attribute_name": "URI", "attribute_value_mlt": [{"subitem_identifier_type": "URI", "subitem_identifier_uri": "http://ci.nii.ac.jp/naid/110009712671/"}, {"subitem_identifier_type": "HDL", "subitem_identifier_uri": "http://hdl.handle.net/2237/23479"}]}, "item_10_publisher_32": {"attribute_name": "\u51fa\u7248\u8005", "attribute_value_mlt": [{"subitem_publisher": "\u4e00\u822c\u793e\u56e3\u6cd5\u4eba\u96fb\u5b50\u60c5\u5831\u901a\u4fe1\u5b66\u4f1a"}]}, "item_10_rights_12": {"attribute_name": "\u6a29\u5229", "attribute_value_mlt": [{"subitem_rights": 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