{"_buckets": {"deposit": "ef0ef555-a221-4ef6-9bf5-0125acad175a"}, "_deposit": {"id": "21441", "owners": [], "pid": {"revision_id": 0, "type": "depid", "value": "21441"}, "status": "published"}, "_oai": {"id": "oai:nagoya.repo.nii.ac.jp:00021441"}, "item_10_alternative_title_19": {"attribute_name": "\u305d\u306e\u4ed6\u306e\u8a00\u8a9e\u306e\u30bf\u30a4\u30c8\u30eb", "attribute_value_mlt": [{"subitem_alternative_title": "Resistive Switching Properties of Si-Oxide Thin Films Prepared by RF Sputtering"}]}, "item_10_biblio_info_6": {"attribute_name": "\u66f8\u8a8c\u60c5\u5831", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2011-06-27", "bibliographicIssueDateType": "Issued"}, "bibliographicIssueNumber": "114", "bibliographicPageEnd": "102", "bibliographicPageStart": "97", "bibliographicVolumeNumber": "111", "bibliographic_titles": [{"bibliographic_title": "\u96fb\u5b50\u60c5\u5831\u901a\u4fe1\u5b66\u4f1a\u6280\u8853\u7814\u7a76\u5831\u544a. 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By sweeping bias to the top Pt electrode, non-polar type resistance-switching behavior was observed after a forming process. In SiO_x thickenss region from 20 to 40nm, the electrical field for the forming process was almost constant at \u301c2MV/cm. The current levels in both the high resistance state (HRS) and the low resistance state (LRS) for Pt/SiO_x/Pt were markedly smaller than those for the Pt/TiO_x/Pt structure. And, even with decreasing SiO_x thickness down to \u301c8nm, the ON/OFF ratio in resistance-switching between HRS and LRS was maintained to be as large as \u301c10^3. The current-voltage characteristics for Pt/SiO_x on p-Si(100) and n-Si(100) suggest that the reduction and oxidation reaction induced by electron fluence near the Pt/SiO_x interface is responsible for obtaining the resistance-switching behavior.", "subitem_description_type": "Abstract"}]}, "item_10_identifier_60": {"attribute_name": "URI", "attribute_value_mlt": [{"subitem_identifier_type": "URI", "subitem_identifier_uri": "http://ci.nii.ac.jp/naid/110008800863/"}, {"subitem_identifier_type": "HDL", "subitem_identifier_uri": "http://hdl.handle.net/2237/23571"}]}, "item_10_publisher_32": {"attribute_name": "\u51fa\u7248\u8005", "attribute_value_mlt": [{"subitem_publisher": "\u4e00\u822c\u793e\u56e3\u6cd5\u4eba\u96fb\u5b50\u60c5\u5831\u901a\u4fe1\u5b66\u4f1a"}]}, "item_10_rights_12": {"attribute_name": "\u6a29\u5229", "attribute_value_mlt": [{"subitem_rights": "(c)\u4e00\u822c\u793e\u56e3\u6cd5\u4eba\u96fb\u5b50\u60c5\u5831\u901a\u4fe1\u5b66\u4f1a 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