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一次元縦積みシリコン系量子ドットの形成と発光ダイオードへの応用(Siウェハ上結晶成長・評価・デバイス応用,結晶成長,評価及びデバイス(化合物,Si,SiGe,電子・光材料))
http://hdl.handle.net/2237/23585
4ec8a3c0-ad44-4ea4-887b-efb6e77d1933
| Name / File | License | Actions | |
|---|---|---|---|
110009569516.pdf (856.4 kB)
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| item type | 学術雑誌論文 / Journal Article(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2016-02-24 | |||||
| タイトル | ||||||
| タイトル | 一次元縦積みシリコン系量子ドットの形成と発光ダイオードへの応用(Siウェハ上結晶成長・評価・デバイス応用,結晶成長,評価及びデバイス(化合物,Si,SiGe,電子・光材料)) | |||||
| その他のタイトル | ||||||
| その他のタイトル | Formation of One-Dimensionally Self-Aligned Si-based Quantum Dots and Its Application to Light Emitting Diodes | |||||
| 著者 |
牧原, 克典
× 牧原, 克典× 池田, 弥央× 宮崎, 誠一× MAKIHAR, Katsunori× IKEDA, Mitsuhisa× MIYAZAKI, Seiichi |
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| 権利 | ||||||
| 権利情報 | (c)一般社団法人電子情報通信学会 本文データは学協会の許諾に基づきCiNiiから複製したものである | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | Si量子ドット | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | 連結構造 | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | 発光ダイオード | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | 化学気相堆積法 | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | Si-based Quantum Dots | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | Self-Aligned Structure | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | Light Emitting Diodes | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | LPCVD | |||||
| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | 熱SiO_2膜上のSi-QDs上にGeを選択成長させ、酸化・高温熱処理を施した後、SiH_4-LPCVDを行うことによって、自己整合的に一次元連結したSi-QDsを形成することができ、n-Si(100)上に形成した半透明Auゲート一次元連結ドットダイオード構造において、Auゲートから正孔、基板から電子を注入することで、閾値電圧〜1.2V 以上を印加した場合、近赤外光領域での明瞭な室温発光が認められた。さらに、極薄熱SiO_2膜上に縦積連結したSi系量子ドットを超高密度形成(〜10^<13>cm^<-2>)することで、高効率キャリア注入が実現でき、電流密度〜0.15A/cm^2においてEL強度を連結ドット密度〜10^<11>cm^<-2>の場合と比べて〜425倍増大させることが出来た。これは、連結ドット内へ高効率キャリア注入されるためEL効率が向上するとともに、1層目のドット表面熱酸化に伴う体積膨張によって、隣接するドット間がシリコン酸化物で充填され、ドットが埋め込まれた構造となるため、ドットを介さない電流成分が抑制された結果で解釈できる。Self-aligned Si quantum dots (Si-QDs) have been successfully fabricated on ultrathin SiO_2 by controlling low-pressure chemical vapor deposition (LPCVD) using pure SiH_4 and/or Si_2H_6, selective Ge LPCVD from 5% GeH_4 diluted with He, thermal oxidation of the dots and subsequent thermal desorption of Ge oxide. In semitransparent Au-gate diodes with self-aligned dots so-prepared, when carriers were injected to the self-aligned Si-QDs from the n-Si(100) substrate for electrons and from the Au top electrode for holes, electroluminescence (EL) in the near-infrared region at room temperature becomes observable with an increase in current at positive biases over a threshold voltage as low as 〜1.2 V at the Au top electrode. Note that, in the case of an areal dot density of 〜10^<13>cm^<-2>, the emission intensity was enhanced markedly by a factor of 〜425 in comparison with the case of 〜10^<11> cm-<-2> under the same current density at 〜0.15A/cm^2. This is clear evidence of not only an increase in radiative recombination rate in the self-aligned structure but also an improvement of recombination efficiency due to a decrease in current leakage with increasing dot density. | |||||
| 出版者 | ||||||
| 出版者 | 一般社団法人電子情報通信学会 | |||||
| 言語 | ||||||
| 言語 | jpn | |||||
| 資源タイプ | ||||||
| 資源 | http://purl.org/coar/resource_type/c_6501 | |||||
| タイプ | journal article | |||||
| ISSN | ||||||
| 収録物識別子タイプ | ISSN | |||||
| 収録物識別子 | 0913-5685 | |||||
| 書誌情報 |
電子情報通信学会技術研究報告. ED, 電子デバイス 巻 112, 号 32, p. 1-6, 発行日 2012-05-10 |
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| 著者版フラグ | ||||||
| 値 | publisher | |||||
| URI | ||||||
| 識別子 | http://ci.nii.ac.jp/naid/110009569516/ | |||||
| 識別子タイプ | URI | |||||
| URI | ||||||
| 識別子 | http://hdl.handle.net/2237/23585 | |||||
| 識別子タイプ | HDL | |||||
