{"_buckets": {"deposit": "bd2d4aba-da94-4f30-8a14-7d9e3526bf0b"}, "_deposit": {"id": "21456", "owners": [], "pid": {"revision_id": 0, "type": "depid", "value": "21456"}, "status": "published"}, "_oai": {"id": "oai:nagoya.repo.nii.ac.jp:00021456", "sets": ["322"]}, "author_link": ["62342", "62343", "62344", "62345", "62346", "62347"], "item_10_alternative_title_19": {"attribute_name": "その他のタイトル", "attribute_value_mlt": [{"subitem_alternative_title": "Formation of One-Dimensionally Self-Aligned Si-based Quantum Dots and Its Application to Light Emitting Diodes", "subitem_alternative_title_language": "en"}]}, "item_10_biblio_info_6": {"attribute_name": "書誌情報", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2012-05-10", "bibliographicIssueDateType": "Issued"}, "bibliographicIssueNumber": "32", "bibliographicPageEnd": "6", "bibliographicPageStart": "1", "bibliographicVolumeNumber": "112", "bibliographic_titles": [{"bibliographic_title": "電子情報通信学会技術研究報告. ED, 電子デバイス", "bibliographic_titleLang": "ja"}]}]}, "item_10_description_4": {"attribute_name": "抄録", "attribute_value_mlt": [{"subitem_description": "熱SiO_2膜上のSi-QDs上にGeを選択成長させ、酸化・高温熱処理を施した後、SiH_4-LPCVDを行うことによって、自己整合的に一次元連結したSi-QDsを形成することができ、n-Si(100)上に形成した半透明Auゲート一次元連結ドットダイオード構造において、Auゲートから正孔、基板から電子を注入することで、閾値電圧〜1.2V 以上を印加した場合、近赤外光領域での明瞭な室温発光が認められた。さらに、極薄熱SiO_2膜上に縦積連結したSi系量子ドットを超高密度形成(〜10^\u003c13\u003ecm^\u003c-2\u003e)することで、高効率キャリア注入が実現でき、電流密度〜0.15A/cm^2においてEL強度を連結ドット密度〜10^\u003c11\u003ecm^\u003c-2\u003eの場合と比べて〜425倍増大させることが出来た。これは、連結ドット内へ高効率キャリア注入されるためEL効率が向上するとともに、1層目のドット表面熱酸化に伴う体積膨張によって、隣接するドット間がシリコン酸化物で充填され、ドットが埋め込まれた構造となるため、ドットを介さない電流成分が抑制された結果で解釈できる。", "subitem_description_language": "ja", "subitem_description_type": "Abstract"}, {"subitem_description": "Self-aligned Si quantum dots (Si-QDs) have been successfully fabricated on ultrathin SiO_2 by controlling low-pressure chemical vapor deposition (LPCVD) using pure SiH_4 and/or Si_2H_6, selective Ge LPCVD from 5% GeH_4 diluted with He, thermal oxidation of the dots and subsequent thermal desorption of Ge oxide. In semitransparent Au-gate diodes with self-aligned dots so-prepared, when carriers were injected to the self-aligned Si-QDs from the n-Si(100) substrate for electrons and from the Au top electrode for holes, electroluminescence (EL) in the near-infrared region at room temperature becomes observable with an increase in current at positive biases over a threshold voltage as low as 〜1.2 V at the Au top electrode. Note that, in the case of an areal dot density of 〜10^\u003c13\u003ecm^\u003c-2\u003e, the emission intensity was enhanced markedly by a factor of 〜425 in comparison with the case of 〜10^\u003c11\u003e cm-\u003c-2\u003e under the same current density at 〜0.15A/cm^2. This is clear evidence of not only an increase in radiative recombination rate in the self-aligned structure but also an improvement of recombination efficiency due to a decrease in current leakage with increasing dot density.", "subitem_description_language": "en", "subitem_description_type": "Abstract"}]}, "item_10_identifier_60": {"attribute_name": "URI", "attribute_value_mlt": [{"subitem_identifier_type": "URI", "subitem_identifier_uri": "http://ci.nii.ac.jp/naid/110009569516/"}, {"subitem_identifier_type": "HDL", "subitem_identifier_uri": "http://hdl.handle.net/2237/23585"}]}, "item_10_publisher_32": {"attribute_name": "出版者", "attribute_value_mlt": [{"subitem_publisher": "一般社団法人電子情報通信学会", "subitem_publisher_language": "ja"}]}, "item_10_relation_43": {"attribute_name": "関連情報", "attribute_value_mlt": [{"subitem_relation_type": "isVersionOf", "subitem_relation_type_id": {"subitem_relation_type_id_text": "http://ci.nii.ac.jp/naid/110009569516/", "subitem_relation_type_select": "URI"}}]}, "item_10_rights_12": {"attribute_name": "権利", "attribute_value_mlt": [{"subitem_rights": "(c)一般社団法人電子情報通信学会 本文データは学協会の許諾に基づきCiNiiから複製したものである", "subitem_rights_language": "ja"}]}, "item_10_select_15": {"attribute_name": "著者版フラグ", "attribute_value_mlt": [{"subitem_select_item": "publisher"}]}, "item_10_source_id_7": {"attribute_name": "ISSN", "attribute_value_mlt": [{"subitem_source_identifier": "0913-5685", "subitem_source_identifier_type": "PISSN"}]}, "item_1615787544753": {"attribute_name": "出版タイプ", "attribute_value_mlt": [{"subitem_version_resource": "http://purl.org/coar/version/c_970fb48d4fbd8a85", "subitem_version_type": "VoR"}]}, "item_access_right": {"attribute_name": "アクセス権", "attribute_value_mlt": [{"subitem_access_right": "open access", "subitem_access_right_uri": "http://purl.org/coar/access_right/c_abf2"}]}, "item_creator": {"attribute_name": "著者", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "牧原, 克典", "creatorNameLang": "ja"}], "nameIdentifiers": [{"nameIdentifier": "62342", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "池田, 弥央", "creatorNameLang": "ja"}], "nameIdentifiers": [{"nameIdentifier": "62343", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "宮崎, 誠一", "creatorNameLang": "ja"}], "nameIdentifiers": [{"nameIdentifier": "62344", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "MAKIHAR, Katsunori", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "62345", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "IKEDA, Mitsuhisa", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "62346", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "MIYAZAKI, Seiichi", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "62347", "nameIdentifierScheme": "WEKO"}]}]}, "item_files": {"attribute_name": "ファイル情報", "attribute_type": "file", "attribute_value_mlt": 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"Other"}, {"subitem_subject": "Self-Aligned Structure", "subitem_subject_scheme": "Other"}, {"subitem_subject": "Light Emitting Diodes", "subitem_subject_scheme": "Other"}, {"subitem_subject": "LPCVD", "subitem_subject_scheme": "Other"}]}, "item_language": {"attribute_name": "言語", "attribute_value_mlt": [{"subitem_language": "jpn"}]}, "item_resource_type": {"attribute_name": "資源タイプ", "attribute_value_mlt": [{"resourcetype": "journal article", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "一次元縦積みシリコン系量子ドットの形成と発光ダイオードへの応用(Siウェハ上結晶成長・評価・デバイス応用,結晶成長,評価及びデバイス(化合物,Si,SiGe,電子・光材料))", "item_titles": {"attribute_name": "タイトル", "attribute_value_mlt": [{"subitem_title": "一次元縦積みシリコン系量子ドットの形成と発光ダイオードへの応用(Siウェハ上結晶成長・評価・デバイス応用,結晶成長,評価及びデバイス(化合物,Si,SiGe,電子・光材料))", "subitem_title_language": "ja"}]}, "item_type_id": "10", "owner": "1", "path": ["322"], "permalink_uri": "http://hdl.handle.net/2237/23585", "pubdate": {"attribute_name": "PubDate", "attribute_value": "2016-02-24"}, "publish_date": "2016-02-24", "publish_status": "0", "recid": "21456", "relation": {}, "relation_version_is_last": true, "title": ["一次元縦積みシリコン系量子ドットの形成と発光ダイオードへの応用(Siウェハ上結晶成長・評価・デバイス応用,結晶成長,評価及びデバイス(化合物,Si,SiGe,電子・光材料))"], "weko_shared_id": -1}