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XPS analyses show that TiON interfacial layer was formed during the SiO_x deposition on TiN by RF-sputtering in an Ar+O_2 gas mixture. Distinct bi-polar type resistive switching was observed after an electro-forming process. There is no need to set the current compliance during the resistance switch from low to high states (SET process). Considering higher dielectric constant of TiON than SiO_x, the interfacial TiON layer can contribute to regulate the current flow through the diode. The clockwise resistive switching, in which the reduction and oxidation (Red-Ox) reactions can occur near the TiN bottom electrode, shows lower operation voltages below 1.5V and better switching endurance as much as 1.4 x 10^3 as compared to the counter-clockwise switching where the Red-Ox reaction can take place near the top Pt electrode. 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