{"_buckets": {"deposit": "44761d6d-01ba-40c1-a3e5-e8e7d06ecce0"}, "_deposit": {"id": "21463", "owners": [], "pid": {"revision_id": 0, "type": "depid", "value": "21463"}, "status": "published"}, "_oai": {"id": "oai:nagoya.repo.nii.ac.jp:00021463"}, "item_10_alternative_title_19": {"attribute_name": "\u305d\u306e\u4ed6\u306e\u8a00\u8a9e\u306e\u30bf\u30a4\u30c8\u30eb", "attribute_value_mlt": [{"subitem_alternative_title": "Evaluation of Chemical Structures and Resistive Switching Behaviors of Pt/Si-rich Oxide/TiN System"}]}, "item_10_biblio_info_6": {"attribute_name": "\u66f8\u8a8c\u60c5\u5831", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2012-06-14", "bibliographicIssueDateType": "Issued"}, "bibliographicIssueNumber": "92", "bibliographicPageEnd": "6", "bibliographicPageStart": "1", "bibliographicVolumeNumber": "112", "bibliographic_titles": [{"bibliographic_title": "\u96fb\u5b50\u60c5\u5831\u901a\u4fe1\u5b66\u4f1a\u6280\u8853\u7814\u7a76\u5831\u544a. SDM, \u30b7\u30ea\u30b3\u30f3\u6750\u6599\u30fb\u30c7\u30d0\u30a4\u30b9"}]}]}, "item_10_description_4": {"attribute_name": "\u6284\u9332", "attribute_value_mlt": [{"subitem_description": "TiN\u4e0a\u306bRF\u30b9\u30d1\u30c3\u30bf\u5f62\u6210\u3057\u305fSi\u30ea\u30c3\u30c1\u9178\u5316\u819c(SiO_x)\u306e\u5316\u5b66\u7d50\u5408\u72b6\u614b\u3092X\u7dda\u5149\u96fb\u5b50\u5206\u5149\u6cd5(XPS)\u306b\u3088\u308a\u8a55\u4fa1\u3057\u3001Pt\u4e0a\u90e8\u96fb\u6975\u3092\u5f62\u6210\u3057\u305fMIM\u975e\u5bfe\u79f0\u69cb\u9020\u306e\u62b5\u6297\u5909\u5316\u7279\u6027\u3092\u8abf\u3079\u305f\u3002SiO_x\u819c\u5806\u7a4d\u76f4\u5f8c\u306b\u304a\u3044\u3066\u3001SiO_x/TiN\u754c\u9762\u306b\u539a\u3055\u301c5nm\u306eTiON\u304c\u5f62\u6210\u3055\u308c\u308b\u3053\u3068\u304cXPS\u5206\u6790\u306b\u3088\u308a\u660e\u3089\u304b\u306b\u306a\u3063\u305f\u3002\u307e\u305f\u3001\u30c0\u30a4\u30aa\u30fc\u30c9\u69cb\u9020\u306b\u304a\u3044\u3066\u3001\u521d\u671f\u6b63\u96fb\u5727\u6383\u5f15\u6642\u306b\u301c2V\u8fd1\u508d\u3067\u96fb\u6d41\u5024\u304c\u30b3\u30f3\u30d7\u30e9\u30a4\u30a2\u30f3\u30b9\u96fb\u6d41\u5024\u307e\u3067\u6025\u6fc0\u306b\u4e0a\u6607\u3059\u308b\u30d5\u30a9\u30fc\u30df\u30f3\u30b0\u304c\u751f\u3058\u3001\u305d\u306e\u5f8c\u306e\u6b63\u30fb\u8ca0\u96fb\u5727\u4ea4\u4e92\u6383\u5f15\u306b\u304a\u3044\u3066\u3001\u96fb\u6d41\u30b3\u30f3\u30d7\u30e9\u30a4\u30a2\u30f3\u30b9\u3092\u5fc5\u8981\u3068\u3057\u306a\u3044\u30d0\u30a4\u30dd\u30fc\u30e9\u578b\u306e\u30b9\u30a4\u30c3\u30c1\u30f3\u30b0\u52d5\u4f5c\u304c\u8a8d\u3081\u3089\u308c\u305f\u3002SiO_x/TiN\u754c\u9762\u306b\u5f62\u6210\u3055\u308c\u305fTiON\u306e\u6bd4\u8a98\u96fb\u7387\u3092\u8003\u616e\u3059\u308b\u3068\u3001TiON\u5c64\u304c\u96fb\u6d41\u5236\u5fa1\u5c64\u3068\u3057\u3066\u6a5f\u80fd\u3057\u305f\u3068\u8003\u3048\u3089\u308c\u308b\u3002\u307e\u305f\u3001\u8ca0\u96fb\u5727\u3067\u30d5\u30a9\u30fc\u30df\u30f3\u30b0\u3092\u8d77\u3053\u3057\u305f\u5834\u5408\u3001\u540c\u69d8\u306b\u62b5\u6297\u5909\u5316\u52d5\u4f5c\u304c\u8a8d\u3081\u3089\u308c\u308b\u3082\u306e\u306e\u3001\u6b63\u96fb\u5727\u30d5\u30a9\u30fc\u30df\u30f3\u30b0\u306b\u6bd4\u3079\u62b5\u6297\u5909\u5316\u52d5\u4f5c\u304c\u4f4e\u96fb\u5727\u3067\u751f\u3058\u308b\u3053\u3068\u304c\u5206\u304b\u3063\u305f\u3002\u3053\u306e\u7d50\u679c\u306f\u3001TiN\u304a\u3088\u3073Pt\u96fb\u6975\u306e\u4ed5\u4e8b\u95a2\u6570\u5dee\u306b\u3088\u3063\u3066\u751f\u3058\u308b\u96fb\u4f4d\u5dee\u306b\u52a0\u3048\u3066\u3001\u4e0a\u90e8Pt/SiO_x\u754c\u9762\u306b\u6bd4\u3079\u3066\u3001\u4e0b\u90e8TiN/SiO_x\u754c\u9762\u306b\u304a\u3044\u3066\u3001\u9178\u5316\u30fb\u9084\u5143\u53cd\u5fdc\u304c\u5bb9\u6613\u306b\u8d77\u3053\u308b\u3053\u3068\u3067\u4f4e\u96fb\u5727\u52d5\u4f5c\u304c\u5b9f\u73fe\u3055\u308c\u305f\u3068\u89e3\u91c8\u3067\u304d\u308b\u3002We have fabricated Pt/Si-rich oxide (SiO_x)/TiN stacked MIM diodes and investigated an impact of the structural asymmetry on their resistive switching behaviors using by x-ray photoelectron spectroscopy (XPS) and current-voltage (I-V) measurements. XPS analyses show that TiON interfacial layer was formed during the SiO_x deposition on TiN by RF-sputtering in an Ar+O_2 gas mixture. Distinct bi-polar type resistive switching was observed after an electro-forming process. There is no need to set the current compliance during the resistance switch from low to high states (SET process). Considering higher dielectric constant of TiON than SiO_x, the interfacial TiON layer can contribute to regulate the current flow through the diode. The clockwise resistive switching, in which the reduction and oxidation (Red-Ox) reactions can occur near the TiN bottom electrode, shows lower operation voltages below 1.5V and better switching endurance as much as 1.4 x 10^3 as compared to the counter-clockwise switching where the Red-Ox reaction can take place near the top Pt electrode. The result implies that a good repeatable nature of the reduction and oxidation (Red-Ox) reactions at the interface between SiOx and TiON/TiN in consideration of relatively high diffusibility of oxygen atoms through Pt", "subitem_description_type": "Abstract"}]}, "item_10_identifier_60": {"attribute_name": "URI", "attribute_value_mlt": [{"subitem_identifier_type": "URI", "subitem_identifier_uri": "http://ci.nii.ac.jp/naid/110009588295/"}, {"subitem_identifier_type": "HDL", "subitem_identifier_uri": "http://hdl.handle.net/2237/23592"}]}, "item_10_publisher_32": {"attribute_name": "\u51fa\u7248\u8005", "attribute_value_mlt": [{"subitem_publisher": "\u4e00\u822c\u793e\u56e3\u6cd5\u4eba\u96fb\u5b50\u60c5\u5831\u901a\u4fe1\u5b66\u4f1a"}]}, "item_10_rights_12": {"attribute_name": "\u6a29\u5229", "attribute_value_mlt": [{"subitem_rights": "(c)\u4e00\u822c\u793e\u56e3\u6cd5\u4eba\u96fb\u5b50\u60c5\u5831\u901a\u4fe1\u5b66\u4f1a \u672c\u6587\u30c7\u30fc\u30bf\u306f\u5b66\u5354\u4f1a\u306e\u8a31\u8afe\u306b\u57fa\u3065\u304dCiNii\u304b\u3089\u8907\u88fd\u3057\u305f\u3082\u306e\u3067\u3042\u308b"}]}, "item_10_select_15": {"attribute_name": "\u8457\u8005\u7248\u30d5\u30e9\u30b0", "attribute_value_mlt": [{"subitem_select_item": "publisher"}]}, "item_10_source_id_7": {"attribute_name": "ISSN", "attribute_value_mlt": [{"subitem_source_identifier": "0913-5685", "subitem_source_identifier_type": "ISSN"}]}, "item_creator": {"attribute_name": "\u8457\u8005", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "\u798f\u5d8b, \u592a\u7d00"}], "nameIdentifiers": [{"nameIdentifier": "62394", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "\u5927\u7530, \u6643\u751f"}], "nameIdentifiers": [{"nameIdentifier": "62395", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "\u7267\u539f, \u514b\u5178"}], "nameIdentifiers": [{"nameIdentifier": "62396", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "\u5bae\u5d0e, \u8aa0\u4e00"}], "nameIdentifiers": [{"nameIdentifier": "62397", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "FUKUSHIMA, Motoki"}], "nameIdentifiers": [{"nameIdentifier": "62398", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "OHTA, Akio"}], "nameIdentifiers": [{"nameIdentifier": "62399", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "MAKIHARA, Katsunori"}], "nameIdentifiers": [{"nameIdentifier": "62400", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "MIYAZAKI, Seiichi"}], "nameIdentifiers": [{"nameIdentifier": "62401", "nameIdentifierScheme": "WEKO"}]}]}, "item_files": {"attribute_name": "\u30d5\u30a1\u30a4\u30eb\u60c5\u5831", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2018-02-21"}], "displaytype": "detail", "download_preview_message": "", "file_order": 0, "filename": "110009588295.pdf", "filesize": [{"value": "669.6 kB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "licensetype": "license_free", "mimetype": "application/pdf", "size": 669600.0, "url": {"label": "110009588295.pdf", "url": "https://nagoya.repo.nii.ac.jp/record/21463/files/110009588295.pdf"}, "version_id": "8978775c-7648-4cb0-949f-c6eca1766b8e"}]}, "item_keyword": {"attribute_name": "\u30ad\u30fc\u30ef\u30fc\u30c9", "attribute_value_mlt": [{"subitem_subject": "\u62b5\u6297\u5909\u5316\u578b\u30e1\u30e2\u30ea\uff08ReRAM\uff09", "subitem_subject_scheme": "Other"}, {"subitem_subject": "Si\u9178\u5316\u7269", "subitem_subject_scheme": "Other"}, {"subitem_subject": "\u5316\u5b66\u7d50\u5408\u72b6\u614b", "subitem_subject_scheme": "Other"}, {"subitem_subject": "\u96fb\u6c17\u62b5\u6297\u30b9\u30a4\u30c3\u30c1\u30f3\u30b0\u7279\u6027", "subitem_subject_scheme": "Other"}, {"subitem_subject": "Resistive Random Access Memories (ReRAMs)", "subitem_subject_scheme": "Other"}, {"subitem_subject": "Si Oxide", "subitem_subject_scheme": "Other"}, {"subitem_subject": "Chemical Bonding Features", "subitem_subject_scheme": "Other"}, {"subitem_subject": "Resistance Switching Property", "subitem_subject_scheme": "Other"}]}, "item_language": {"attribute_name": "\u8a00\u8a9e", "attribute_value_mlt": [{"subitem_language": "jpn"}]}, "item_resource_type": {"attribute_name": "\u8cc7\u6e90\u30bf\u30a4\u30d7", "attribute_value_mlt": [{"resourcetype": "journal article", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "Pt/SiO_x/TiN\u30c0\u30a4\u30aa\u30fc\u30c9\u69cb\u9020\u306e\u5316\u5b66\u69cb\u9020\u5206\u6790\u3068\u96fb\u6c17\u62b5\u6297\u30b9\u30a4\u30c3\u30c1\u30f3\u30b0\u7279\u6027\u8a55\u4fa1(\u30b2\u30fc\u30c8\u7d76\u7e01\u8584\u819c,\u5bb9\u91cf\u819c,\u6a5f\u80fd\u819c\u53ca\u3073\u30e1\u30e2\u30ea\u6280\u8853)", "item_titles": {"attribute_name": "\u30bf\u30a4\u30c8\u30eb", "attribute_value_mlt": [{"subitem_title": "Pt/SiO_x/TiN\u30c0\u30a4\u30aa\u30fc\u30c9\u69cb\u9020\u306e\u5316\u5b66\u69cb\u9020\u5206\u6790\u3068\u96fb\u6c17\u62b5\u6297\u30b9\u30a4\u30c3\u30c1\u30f3\u30b0\u7279\u6027\u8a55\u4fa1(\u30b2\u30fc\u30c8\u7d76\u7e01\u8584\u819c,\u5bb9\u91cf\u819c,\u6a5f\u80fd\u819c\u53ca\u3073\u30e1\u30e2\u30ea\u6280\u8853)"}]}, "item_type_id": "10", "owner": "1", "path": ["320/321/322"], "permalink_uri": "http://hdl.handle.net/2237/23592", "pubdate": {"attribute_name": "\u516c\u958b\u65e5", "attribute_value": "2016-02-24"}, "publish_date": "2016-02-24", "publish_status": "0", "recid": "21463", "relation": {}, "relation_version_is_last": true, "title": ["Pt/SiO_x/TiN\u30c0\u30a4\u30aa\u30fc\u30c9\u69cb\u9020\u306e\u5316\u5b66\u69cb\u9020\u5206\u6790\u3068\u96fb\u6c17\u62b5\u6297\u30b9\u30a4\u30c3\u30c1\u30f3\u30b0\u7279\u6027\u8a55\u4fa1(\u30b2\u30fc\u30c8\u7d76\u7e01\u8584\u819c,\u5bb9\u91cf\u819c,\u6a5f\u80fd\u819c\u53ca\u3073\u30e1\u30e2\u30ea\u6280\u8853)"], "weko_shared_id": null}