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GeSn系IV族半導体のエピタキシャル成長と結晶欠陥の制御
http://hdl.handle.net/2237/24332
b5cf2de7-9808-4945-ad8d-63648856c267
名前 / ファイル | ライセンス | アクション | |
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Item type | 学位論文 / Thesis or Dissertation(1) | |||||
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公開日 | 2016-06-07 | |||||
タイトル | ||||||
タイトル | GeSn系IV族半導体のエピタキシャル成長と結晶欠陥の制御 | |||||
その他のタイトル | ||||||
その他のタイトル | Control of epitaxial growth and defects of GeSn-related group-IV semiconductors | |||||
著者 |
浅野, 孝典
× 浅野, 孝典 |
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言語 | ||||||
言語 | jpn | |||||
資源タイプ | ||||||
資源 | http://purl.org/coar/resource_type/c_46ec | |||||
タイプ | thesis | |||||
書誌情報 | 発行日 2016-03-25 | |||||
学位名 | ||||||
学位名 | 博士(工学) | |||||
学位授与機関 | ||||||
学位授与機関名 | ||||||
学位授与機関名 | 名古屋大学 | |||||
学位授与年度 | ||||||
学位授与年度 | 2015 | |||||
学位授与年月日 | ||||||
学位授与年月日 | 2016-03-25 | |||||
学位授与番号 | ||||||
学位授与番号 | 13901甲第11471号 | |||||
著者版フラグ | ||||||
値 | none | |||||
URI | ||||||
識別子 | http://hdl.handle.net/2237/24332 | |||||
識別子タイプ | HDL |