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  1. B100 理学部/理学研究科
  2. B100a 雑誌掲載論文
  3. 学術雑誌

Molecular beam epitaxy growth of monolayer niobium diselenide flakes

http://hdl.handle.net/2237/25202
http://hdl.handle.net/2237/25202
9fbb0c73-c276-4c39-95c1-39d77b4ced70
名前 / ファイル ライセンス アクション
1_4963178.pdf 1_4963178.pdf ファイル公開:2017/09/26 (2.6 MB)
Item type 学術雑誌論文 / Journal Article(1)
公開日 2016-12-15
タイトル
タイトル Molecular beam epitaxy growth of monolayer niobium diselenide flakes
言語 en
著者 Hotta, Takato

× Hotta, Takato

WEKO 68016

en Hotta, Takato

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Tokuda, Takuto

× Tokuda, Takuto

WEKO 68017

en Tokuda, Takuto

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Zhao, Sihan

× Zhao, Sihan

WEKO 68018

en Zhao, Sihan

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Watanabe, Kenji

× Watanabe, Kenji

WEKO 68019

en Watanabe, Kenji

Search repository
Taniguchi, Takashi

× Taniguchi, Takashi

WEKO 68020

en Taniguchi, Takashi

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Shinohara, Hisanori

× Shinohara, Hisanori

WEKO 68021

en Shinohara, Hisanori

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Kitaura, Ryo

× Kitaura, Ryo

WEKO 68022

en Kitaura, Ryo

Search repository
アクセス権
アクセス権 open access
アクセス権URI http://purl.org/coar/access_right/c_abf2
権利
言語 en
権利情報 Copyright 2016 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing.The following article appeared in (APPLIED PHYSICS LETTERS. v.109, n.13, 2016, p.133101) and may be found at (http://dx.doi.org/10.1063/1.4963178).
抄録
内容記述 Monolayer niobium diselenide (NbSe2) is prepared through molecular beam epitaxy with hexagonal boron nitride (hBN) as substrates. Atomic force microscopy and the Raman spectroscopy have shown that the monolayer NbSe2 grown on the hBN possesses triangular or truncated triangular shape whose lateral size amounts up to several hundreds of nanometers. We have found that the precisely controlled supply rate and ultraflat surface of hBN plays an important role in the growth of the monolayer NbSe2.
言語 en
内容記述タイプ Abstract
出版者
言語 en
出版者 AIP Publishing
言語
言語 eng
資源タイプ
資源タイプresource http://purl.org/coar/resource_type/c_6501
タイプ journal article
出版タイプ
出版タイプ VoR
出版タイプResource http://purl.org/coar/version/c_970fb48d4fbd8a85
DOI
関連タイプ isVersionOf
識別子タイプ DOI
関連識別子 https://doi.org/10.1063/1.4963178
ISSN
収録物識別子タイプ PISSN
収録物識別子 0003-6951
書誌情報 en : APPLIED PHYSICS LETTERS

巻 109, 号 13, p. 133101-133101, 発行日 2016-09-26
著者版フラグ
値 publisher
URI
識別子 http://dx.doi.org/10.1063/1.4963178
識別子タイプ DOI
URI
識別子 http://hdl.handle.net/2237/25202
識別子タイプ HDL
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