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Growth of ultrahigh-Sn-content Ge1− x Sn x epitaxial layer and its impact on controlling Schottky barrier height of metal/Ge contact
http://hdl.handle.net/2237/25281
2c23442c-98b5-4bf2-8dc1-7dbcf9cfbe28
名前 / ファイル | ライセンス | アクション | |
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2016-12-21 | |||||
タイトル | ||||||
タイトル | Growth of ultrahigh-Sn-content Ge1− x Sn x epitaxial layer and its impact on controlling Schottky barrier height of metal/Ge contact | |||||
著者 |
Suzuki, Akihiro
× Suzuki, Akihiro× Nakatsuka, Osamu× Shibayama, Shigehisa× Sakashita, Mitsuo× Takeuchi, Wakana× Kurosawa, Masashi× Zaima, Shigeaki |
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権利 | ||||||
権利情報 | © 2016 The Japan Society of Applied Physics | |||||
抄録 | ||||||
内容記述 | We examined the epitaxial growth of an ultrahigh-Sn-content Ge1− x Sn x layer on a Ge substrate and investigated the impact of a Ge1− x Sn x interlayer on the Schottky barrier height (SBH) of the metal/Ge contact. In this study, we considered guidelines of the strain energy and growth temperature to realize a high-Sn-content Ge1− x Sn x layer while keeping the epitaxial growth and suppressing the Sn precipitation. By reducing the film thickness and keeping a low growth temperature, we formed an atomically flat and uniform Ge1− x Sn x epitaxial layer with a Sn content up to 46% on a Ge(001) substrate. We also performed the current density–voltage measurement for Al/Ge1− x Sn x /n-Ge Schottky diodes to estimate the SBH. We found that the SBH of Al/Ge1− x Sn x /n-Ge contact decreases with increasing Sn content in the Ge1− x Sn x interlayer. The shift of the pinning position towards the conduction band edge of Ge is one of the reasons for the SBH reduction of Al/Ge1− x Sn x /n-Ge contact because the valence band edge of Ge1− x Sn x would rise as the Sn content increases. | |||||
内容記述タイプ | Abstract | |||||
出版者 | ||||||
出版者 | IOP publishing | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプresource | http://purl.org/coar/resource_type/c_6501 | |||||
タイプ | journal article | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 0021-4922 | |||||
書誌情報 |
Japanese Journal of Applied Physics 巻 55, 号 4S, p. 04EB12-04EB12, 発行日 2016-04 |
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著者版フラグ | ||||||
値 | author | |||||
URI | ||||||
識別子 | http://dx.doi.org/10.7567/JJAP.55.04EB12 | |||||
識別子タイプ | DOI | |||||
URI | ||||||
識別子 | http://hdl.handle.net/2237/25281 | |||||
識別子タイプ | HDL |