{"_buckets": {"deposit": "75d28f54-4e22-442c-a0ed-ac09ea59133e"}, "_deposit": {"id": "23091", "owners": [], "pid": {"revision_id": 0, "type": "depid", "value": "23091"}, "status": "published"}, "_oai": {"id": "oai:nagoya.repo.nii.ac.jp:00023091"}, "item_10_biblio_info_6": {"attribute_name": "\u66f8\u8a8c\u60c5\u5831", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2016-04", "bibliographicIssueDateType": "Issued"}, "bibliographicIssueNumber": "4S", "bibliographicPageEnd": "04EB12", "bibliographicPageStart": "04EB12", "bibliographicVolumeNumber": "55", "bibliographic_titles": [{"bibliographic_title": "Japanese Journal of Applied Physics"}]}]}, "item_10_description_4": {"attribute_name": "\u6284\u9332", "attribute_value_mlt": [{"subitem_description": "We examined the epitaxial growth of an ultrahigh-Sn-content Ge1\u2212 x Sn x layer on a Ge substrate and investigated the impact of a Ge1\u2212 x Sn x interlayer on the Schottky barrier height (SBH) of the metal/Ge contact. In this study, we considered guidelines of the strain energy and growth temperature to realize a high-Sn-content Ge1\u2212 x Sn x layer while keeping the epitaxial growth and suppressing the Sn precipitation. By reducing the film thickness and keeping a low growth temperature, we formed an atomically flat and uniform Ge1\u2212 x Sn x epitaxial layer with a Sn content up to 46% on a Ge(001) substrate. We also performed the current density\u2013voltage measurement for Al/Ge1\u2212 x Sn x /n-Ge Schottky diodes to estimate the SBH. We found that the SBH of Al/Ge1\u2212 x Sn x /n-Ge contact decreases with increasing Sn content in the Ge1\u2212 x Sn x interlayer. The shift of the pinning position towards the conduction band edge of Ge is one of the reasons for the SBH reduction of Al/Ge1\u2212 x Sn x /n-Ge contact because the valence band edge of Ge1\u2212 x Sn x would rise as the Sn content increases.", "subitem_description_type": "Abstract"}]}, "item_10_identifier_60": {"attribute_name": "URI", "attribute_value_mlt": [{"subitem_identifier_type": "DOI", "subitem_identifier_uri": "http://dx.doi.org/10.7567/JJAP.55.04EB12"}, {"subitem_identifier_type": "HDL", "subitem_identifier_uri": "http://hdl.handle.net/2237/25281"}]}, "item_10_publisher_32": {"attribute_name": "\u51fa\u7248\u8005", "attribute_value_mlt": [{"subitem_publisher": "IOP publishing"}]}, "item_10_rights_12": {"attribute_name": "\u6a29\u5229", "attribute_value_mlt": [{"subitem_rights": "\u00a9 2016 The Japan Society of Applied Physics"}]}, "item_10_select_15": {"attribute_name": "\u8457\u8005\u7248\u30d5\u30e9\u30b0", "attribute_value_mlt": [{"subitem_select_item": "author"}]}, "item_10_source_id_7": {"attribute_name": "ISSN", "attribute_value_mlt": [{"subitem_source_identifier": "0021-4922", "subitem_source_identifier_type": "ISSN"}]}, "item_creator": {"attribute_name": "\u8457\u8005", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "Suzuki, Akihiro"}], "nameIdentifiers": [{"nameIdentifier": "68449", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Nakatsuka, Osamu"}], "nameIdentifiers": [{"nameIdentifier": "68450", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Shibayama, Shigehisa"}], "nameIdentifiers": [{"nameIdentifier": "68451", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Sakashita, Mitsuo"}], "nameIdentifiers": [{"nameIdentifier": "68452", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Takeuchi, Wakana"}], "nameIdentifiers": [{"nameIdentifier": "68453", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Kurosawa, Masashi"}], "nameIdentifiers": [{"nameIdentifier": "68454", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Zaima, Shigeaki"}], "nameIdentifiers": [{"nameIdentifier": "68455", "nameIdentifierScheme": "WEKO"}]}]}, "item_files": {"attribute_name": "\u30d5\u30a1\u30a4\u30eb\u60c5\u5831", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2017-04-01"}], "displaytype": "detail", "download_preview_message": "", "file_order": 0, "filename": "Suzuki_JJAP_Merged.pdf", "filesize": [{"value": "1.2 MB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "licensetype": "license_free", "mimetype": "application/pdf", "size": 1200000.0, "url": {"label": "Suzuki_JJAP_Merged.pdf \u30d5\u30a1\u30a4\u30eb\u516c\u958b\uff1a2017/04/01", "url": "https://nagoya.repo.nii.ac.jp/record/23091/files/Suzuki_JJAP_Merged.pdf"}, "version_id": "65de1c49-e866-40ed-8e96-094e2e6c30dd"}]}, "item_language": {"attribute_name": "\u8a00\u8a9e", "attribute_value_mlt": [{"subitem_language": "eng"}]}, "item_resource_type": {"attribute_name": "\u8cc7\u6e90\u30bf\u30a4\u30d7", "attribute_value_mlt": [{"resourcetype": "journal article", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "Growth of ultrahigh-Sn-content Ge1\u2212 x Sn x epitaxial layer and its impact on controlling Schottky barrier height of metal/Ge contact", "item_titles": {"attribute_name": "\u30bf\u30a4\u30c8\u30eb", "attribute_value_mlt": [{"subitem_title": "Growth of ultrahigh-Sn-content Ge1\u2212 x Sn x epitaxial layer and its impact on controlling Schottky barrier height of metal/Ge contact"}]}, "item_type_id": "10", "owner": "1", "path": ["320/321/322"], "permalink_uri": "http://hdl.handle.net/2237/25281", "pubdate": {"attribute_name": "\u516c\u958b\u65e5", "attribute_name_i18n": "\u516c\u958b\u65e5", "attribute_value": "2016-12-21"}, "publish_date": "2016-12-21", "publish_status": "0", "recid": "23091", "relation": {}, "relation_version_is_last": true, "title": ["Growth of ultrahigh-Sn-content Ge1\u2212 x Sn x epitaxial layer and its impact on controlling Schottky barrier height of metal/Ge contact"], "weko_shared_id": null}