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  1. B200 工学部/工学研究科
  2. B200a 雑誌掲載論文
  3. 学術雑誌

Growth of ultrahigh-Sn-content Ge1− x Sn x epitaxial layer and its impact on controlling Schottky barrier height of metal/Ge contact

http://hdl.handle.net/2237/25281
http://hdl.handle.net/2237/25281
2c23442c-98b5-4bf2-8dc1-7dbcf9cfbe28
名前 / ファイル ライセンス アクション
Suzuki_JJAP_Merged.pdf Suzuki_JJAP_Merged.pdf ファイル公開:2017/04/01 (1.2 MB)
Item type 学術雑誌論文 / Journal Article(1)
公開日 2016-12-21
タイトル
タイトル Growth of ultrahigh-Sn-content Ge1− x Sn x epitaxial layer and its impact on controlling Schottky barrier height of metal/Ge contact
言語 en
著者 Suzuki, Akihiro

× Suzuki, Akihiro

WEKO 68449

en Suzuki, Akihiro

Search repository
Nakatsuka, Osamu

× Nakatsuka, Osamu

WEKO 68450

en Nakatsuka, Osamu

Search repository
Shibayama, Shigehisa

× Shibayama, Shigehisa

WEKO 68451

en Shibayama, Shigehisa

Search repository
Sakashita, Mitsuo

× Sakashita, Mitsuo

WEKO 68452

en Sakashita, Mitsuo

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Takeuchi, Wakana

× Takeuchi, Wakana

WEKO 68453

en Takeuchi, Wakana

Search repository
Kurosawa, Masashi

× Kurosawa, Masashi

WEKO 68454

en Kurosawa, Masashi

Search repository
Zaima, Shigeaki

× Zaima, Shigeaki

WEKO 68455

en Zaima, Shigeaki

Search repository
アクセス権
アクセス権 open access
アクセス権URI http://purl.org/coar/access_right/c_abf2
権利
言語 en
権利情報 © 2016 The Japan Society of Applied Physics
抄録
内容記述 We examined the epitaxial growth of an ultrahigh-Sn-content Ge1− x Sn x layer on a Ge substrate and investigated the impact of a Ge1− x Sn x interlayer on the Schottky barrier height (SBH) of the metal/Ge contact. In this study, we considered guidelines of the strain energy and growth temperature to realize a high-Sn-content Ge1− x Sn x layer while keeping the epitaxial growth and suppressing the Sn precipitation. By reducing the film thickness and keeping a low growth temperature, we formed an atomically flat and uniform Ge1− x Sn x epitaxial layer with a Sn content up to 46% on a Ge(001) substrate. We also performed the current density–voltage measurement for Al/Ge1− x Sn x /n-Ge Schottky diodes to estimate the SBH. We found that the SBH of Al/Ge1− x Sn x /n-Ge contact decreases with increasing Sn content in the Ge1− x Sn x interlayer. The shift of the pinning position towards the conduction band edge of Ge is one of the reasons for the SBH reduction of Al/Ge1− x Sn x /n-Ge contact because the valence band edge of Ge1− x Sn x would rise as the Sn content increases.
言語 en
内容記述タイプ Abstract
出版者
言語 en
出版者 IOP publishing
言語
言語 eng
資源タイプ
資源タイプresource http://purl.org/coar/resource_type/c_6501
タイプ journal article
出版タイプ
出版タイプ AM
出版タイプResource http://purl.org/coar/version/c_ab4af688f83e57aa
DOI
関連タイプ isVersionOf
識別子タイプ DOI
関連識別子 https://doi.org/10.7567/JJAP.55.04EB12
ISSN
収録物識別子タイプ PISSN
収録物識別子 0021-4922
書誌情報 en : Japanese Journal of Applied Physics

巻 55, 号 4S, p. 04EB12-04EB12, 発行日 2016-04
著者版フラグ
値 author
URI
識別子 http://dx.doi.org/10.7567/JJAP.55.04EB12
識別子タイプ DOI
URI
識別子 http://hdl.handle.net/2237/25281
識別子タイプ HDL
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