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Crystalline structure of TiC ultrathin layers formed on highly oriented pyrolytic graphite by chemical reaction from Ti/graphite system
http://hdl.handle.net/2237/25282
http://hdl.handle.net/2237/252821ebc893a-1191-4b6e-8aad-65fbb05fff89
名前 / ファイル | ライセンス | アクション |
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2016-12-21 | |||||
タイトル | ||||||
タイトル | Crystalline structure of TiC ultrathin layers formed on highly oriented pyrolytic graphite by chemical reaction from Ti/graphite system | |||||
言語 | en | |||||
著者 |
Nakatsuka, Osamu
× Nakatsuka, Osamu× Hisada, Kenji× Oida, Satoshi× Sakai, Akira× Zaima, Shigeaki |
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アクセス権 | ||||||
アクセス権 | open access | |||||
アクセス権URI | http://purl.org/coar/access_right/c_abf2 | |||||
権利 | ||||||
言語 | en | |||||
権利情報 | © 2016 The Japan Society of Applied Physics | |||||
抄録 | ||||||
内容記述 | We have investigated the atomic-scale reaction between a Ti thin layer and highly oriented pyrolytic graphite (HOPG) mainly by scanning tunneling microscopy. A deposited Ti layer shows an epitaxial orientation structure on a HOPG substrate even in room-temperature deposition, while the bonding between Ti and HOPG is very weak. The chemical reaction between Ti and HOPG takes place, and epitaxial TiC domains on HOPG are formed for annealing at above 600 °C. The TiC domains shows a smooth surface corresponding to the TiC(111) plane after annealing at 700 °C. The formation of TiC(001) facets and significant surface roughening of not only TiC but also HOPG substrates are observed for annealing at as high as 900 °C. | |||||
言語 | en | |||||
内容記述タイプ | Abstract | |||||
出版者 | ||||||
言語 | en | |||||
出版者 | IOP publishing | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプresource | http://purl.org/coar/resource_type/c_6501 | |||||
タイプ | journal article | |||||
出版タイプ | ||||||
出版タイプ | AM | |||||
出版タイプResource | http://purl.org/coar/version/c_ab4af688f83e57aa | |||||
DOI | ||||||
関連タイプ | isVersionOf | |||||
識別子タイプ | DOI | |||||
関連識別子 | https://doi.org/10.7567/JJAP.55.06JE02 | |||||
ISSN | ||||||
収録物識別子タイプ | PISSN | |||||
収録物識別子 | 0021-4922 | |||||
書誌情報 |
en : Japanese Journal of Applied Physics 巻 55, 号 6S3, p. 06JE02-06JE02, 発行日 2016-06 |
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著者版フラグ | ||||||
値 | author | |||||
URI | ||||||
識別子 | http://dx.doi.org/10.7567/JJAP.55.06JE02 | |||||
識別子タイプ | DOI | |||||
URI | ||||||
識別子 | http://hdl.handle.net/2237/25282 | |||||
識別子タイプ | HDL |