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High-density formation of Ta nanodot induced by remote hydrogen plasma
http://hdl.handle.net/2237/25601
http://hdl.handle.net/2237/25601be399a68-9613-4d0f-9727-7ce02649d903
名前 / ファイル | ライセンス | アクション |
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2017-02-17 | |||||
タイトル | ||||||
タイトル | High-density formation of Ta nanodot induced by remote hydrogen plasma | |||||
言語 | en | |||||
著者 |
Wang, Yaping
× Wang, Yaping× Takeuchi, Daichi× Ohta, Akio× Ikeda, Mitsuhisa× Makihara, Katsunori× Miyazaki, Seiichi |
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アクセス権 | ||||||
アクセス権 | open access | |||||
アクセス権URI | http://purl.org/coar/access_right/c_abf2 | |||||
権利 | ||||||
言語 | en | |||||
権利情報 | © 2017 The Japan Society of Applied Physics | |||||
抄録 | ||||||
内容記述 | We have studied the formation of Ta nanodots (NDs) on thermally grown SiO2/Si by exposing a thin metal layer to a remote H2 plasma (H2-RP) without external heating. Atomic force microscopy (AFM) analyses show that a combination of a Ge (~30.0 nm)/Ta (~2.0 nm) bilayer stack with subsequent H2-RP exposure is effective for forming electrically isolated Ta NDs with an areal dot density as high as ~1011 cm−2, where the Ge layer plays an important role as a barrier layer against the oxidation of the ultrathin Ta layer surface. The change in the chemical structure of the Ge/Ta bilayer stack on SiO2/Si upon Ta ND formation by H2-RP exposure is investigated by hard X-ray photoemission spectroscopy (HAXPES) and X-ray photoelectron spectroscopy (XPS). | |||||
言語 | en | |||||
内容記述タイプ | Abstract | |||||
出版者 | ||||||
言語 | en | |||||
出版者 | IOP publishing | |||||
言語 | ||||||
言語 | eng | |||||
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資源タイプresource | http://purl.org/coar/resource_type/c_6501 | |||||
タイプ | journal article | |||||
出版タイプ | ||||||
出版タイプ | AM | |||||
出版タイプResource | http://purl.org/coar/version/c_ab4af688f83e57aa | |||||
DOI | ||||||
関連タイプ | isVersionOf | |||||
識別子タイプ | DOI | |||||
関連識別子 | https://doi.org/10.7567/JJAP.56.01AE01 | |||||
ISSN | ||||||
収録物識別子タイプ | PISSN | |||||
収録物識別子 | 0021-4922 | |||||
書誌情報 |
en : Japanese Journal of Applied Physics 巻 56, 号 1S, p. 01AE01-01AE01, 発行日 2017-01 |
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著者版フラグ | ||||||
値 | author | |||||
URI | ||||||
識別子 | https://doi.org/10.7567/JJAP.56.01AE01 | |||||
識別子タイプ | DOI | |||||
URI | ||||||
識別子 | http://hdl.handle.net/2237/25601 | |||||
識別子タイプ | HDL |