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Temperature dependences of current density–voltage and capacitance–frequency characteristics of hydrogenated nanocrystalline cubic SiC/crystalline Si heterojunction diodes
http://hdl.handle.net/2237/25712
http://hdl.handle.net/2237/25712e4b45da9-58c5-4fa6-b505-33487d567478
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PDF2016_Figs.pdf ファイル公開：2018/11/30 (427.2 kB)
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PDF2016.pdf ファイル公開：2018/11/30 (497.9 kB)
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| Item type | 学術雑誌論文 / Journal Article(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2017-03-15 | |||||
| タイトル | ||||||
| タイトル | Temperature dependences of current density–voltage and capacitance–frequency characteristics of hydrogenated nanocrystalline cubic SiC/crystalline Si heterojunction diodes | |||||
| 言語 | en | |||||
| 著者 |
Tabata, Akimori
× Tabata, Akimori |
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| アクセス権 | ||||||
| アクセス権 | open access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_abf2 | |||||
| 権利 | ||||||
| 言語 | en | |||||
| 権利情報 | © 2016. This manuscript version is made available under the CC-BY-NC-ND 4.0 license http://creativecommons.org/licenses/by-nc-nd/4.0/ | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | Silicon carbide | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | Nanocrystalline | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | Hot-wire chemical vapor deposition | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | Heterojunction | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | Current density–voltage characteristics | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | Capacitance–frequency characteristics | |||||
| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | We investigated the temperature dependences of the current density–voltage (J − V) and capacitance–frequency (C − f) characteristics of hydrogenated nanocrystalline cubic SiC/crystalline Si heterojunction diodes. The J − V characteristics showed that over the measured temperature range (100–400 K) the carrier transport was governed by diffusion and recombination. Recombination became dominant with decreasing temperature and tunneling did not contribute to the carrier transport. The C − f characteristics showed two relaxation processes dominant at low and high temperatures. The relaxation process dominant at low temperatures had different relaxation times depending on the heterojunction diode, which was caused by shallow states with different densities. The relaxation process dominant at high temperatures had almost the same relaxation times among diodes, which was caused by deep states (0.25–0.27 eV) with almost the same densities. | |||||
| 言語 | en | |||||
| 出版者 | ||||||
| 出版者 | Elsevier | |||||
| 言語 | en | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | journal article | |||||
| 出版タイプ | ||||||
| 出版タイプ | AM | |||||
| 出版タイプResource | http://purl.org/coar/version/c_ab4af688f83e57aa | |||||
| DOI | ||||||
| 関連タイプ | isVersionOf | |||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | https://doi.org/10.1016/j.tsf.2016.10.042 | |||||
| ISSN | ||||||
| 収録物識別子タイプ | PISSN | |||||
| 収録物識別子 | 0040-6090 | |||||
| 書誌情報 |
en : Thin Solid Films 巻 619, p. 323-327, 発行日 2016-11-30 |
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| 著者版フラグ | ||||||
| 値 | author | |||||
| URI | ||||||
| 識別子 | http://dx.doi.org/10.1016/j.tsf.2016.10.042 | |||||
| 識別子タイプ | DOI | |||||
| URI | ||||||
| 識別子 | http://hdl.handle.net/2237/25712 | |||||
| 識別子タイプ | HDL | |||||
