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  1. B200 工学部/工学研究科
  2. B200a 雑誌掲載論文
  3. 学術雑誌

Temperature dependences of current density–voltage and capacitance–frequency characteristics of hydrogenated nanocrystalline cubic SiC/crystalline Si heterojunction diodes

http://hdl.handle.net/2237/25712
http://hdl.handle.net/2237/25712
e4b45da9-58c5-4fa6-b505-33487d567478
名前 / ファイル ライセンス アクション
PDF2016_Figs.pdf PDF2016_Figs.pdf ファイル公開:2018/11/30 (427.2 kB)
PDF2016.pdf PDF2016.pdf ファイル公開:2018/11/30 (497.9 kB)
Item type 学術雑誌論文 / Journal Article(1)
公開日 2017-03-15
タイトル
タイトル Temperature dependences of current density–voltage and capacitance–frequency characteristics of hydrogenated nanocrystalline cubic SiC/crystalline Si heterojunction diodes
言語 en
著者 Tabata, Akimori

× Tabata, Akimori

WEKO 69816

en Tabata, Akimori

Search repository
アクセス権
アクセス権 open access
アクセス権URI http://purl.org/coar/access_right/c_abf2
権利
言語 en
権利情報 © 2016. This manuscript version is made available under the CC-BY-NC-ND 4.0 license http://creativecommons.org/licenses/by-nc-nd/4.0/
キーワード
主題Scheme Other
主題 Silicon carbide
キーワード
主題Scheme Other
主題 Nanocrystalline
キーワード
主題Scheme Other
主題 Hot-wire chemical vapor deposition
キーワード
主題Scheme Other
主題 Heterojunction
キーワード
主題Scheme Other
主題 Current density–voltage characteristics
キーワード
主題Scheme Other
主題 Capacitance–frequency characteristics
抄録
内容記述 We investigated the temperature dependences of the current density–voltage (J − V) and capacitance–frequency (C − f) characteristics of hydrogenated nanocrystalline cubic SiC/crystalline Si heterojunction diodes. The J − V characteristics showed that over the measured temperature range (100–400 K) the carrier transport was governed by diffusion and recombination. Recombination became dominant with decreasing temperature and tunneling did not contribute to the carrier transport. The C − f characteristics showed two relaxation processes dominant at low and high temperatures. The relaxation process dominant at low temperatures had different relaxation times depending on the heterojunction diode, which was caused by shallow states with different densities. The relaxation process dominant at high temperatures had almost the same relaxation times among diodes, which was caused by deep states (0.25–0.27 eV) with almost the same densities.
言語 en
内容記述タイプ Abstract
出版者
言語 en
出版者 Elsevier
言語
言語 eng
資源タイプ
資源タイプresource http://purl.org/coar/resource_type/c_6501
タイプ journal article
出版タイプ
出版タイプ AM
出版タイプResource http://purl.org/coar/version/c_ab4af688f83e57aa
DOI
関連タイプ isVersionOf
識別子タイプ DOI
関連識別子 https://doi.org/10.1016/j.tsf.2016.10.042
ISSN
収録物識別子タイプ PISSN
収録物識別子 0040-6090
書誌情報 en : Thin Solid Films

巻 619, p. 323-327, 発行日 2016-11-30
著者版フラグ
値 author
URI
識別子 http://dx.doi.org/10.1016/j.tsf.2016.10.042
識別子タイプ DOI
URI
識別子 http://hdl.handle.net/2237/25712
識別子タイプ HDL
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