{"_buckets": {"deposit": "858c7baa-260c-4f2d-a6cd-9ccc5d8ae1e0"}, "_deposit": {"id": "26525", "owners": [], "pid": {"revision_id": 0, "type": "depid", "value": "26525"}, "status": "published"}, "_oai": {"id": "oai:nagoya.repo.nii.ac.jp:00026525", "sets": ["607"]}, "author_link": ["87234"], "item_12_alternative_title_19": {"attribute_name": "その他のタイトル", "attribute_value_mlt": [{"subitem_alternative_title": "Study on improvement of characteristics of AlN buffer and GaN layers for GaN high frequency power device on Si substrate", "subitem_alternative_title_language": "en"}]}, "item_12_biblio_info_6": {"attribute_name": "書誌情報", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2018-09-27", "bibliographicIssueDateType": "Issued"}}]}, "item_12_date_granted_64": {"attribute_name": "学位授与年月日", "attribute_value_mlt": [{"subitem_dategranted": "2018-09-27"}]}, "item_12_degree_grantor_62": {"attribute_name": "学位授与機関", "attribute_value_mlt": [{"subitem_degreegrantor": [{"subitem_degreegrantor_language": "ja", "subitem_degreegrantor_name": "名古屋大学"}, {"subitem_degreegrantor_language": "en", "subitem_degreegrantor_name": "Nagoya University"}], "subitem_degreegrantor_identifier": [{"subitem_degreegrantor_identifier_name": "13901", "subitem_degreegrantor_identifier_scheme": "kakenhi"}]}]}, "item_12_degree_name_61": {"attribute_name": "学位名", "attribute_value_mlt": [{"subitem_degreename": "博士(工学)", "subitem_degreename_language": "ja"}]}, "item_12_dissertation_number_65": {"attribute_name": "学位授与番号", "attribute_value_mlt": [{"subitem_dissertationnumber": "甲第12499号"}]}, "item_12_select_15": {"attribute_name": "著者版フラグ", "attribute_value_mlt": [{"subitem_select_item": "none"}]}, "item_12_text_63": {"attribute_name": "学位授与年度", "attribute_value_mlt": [{"subitem_text_value": "2018"}]}, "item_access_right": {"attribute_name": "アクセス権", "attribute_value_mlt": [{"subitem_access_right": "metadata only access", "subitem_access_right_uri": "http://purl.org/coar/access_right/c_14cb"}]}, "item_creator": {"attribute_name": "著者", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "松本, 光二", "creatorNameLang": "ja"}], "nameIdentifiers": [{"nameIdentifier": "87234", "nameIdentifierScheme": "WEKO"}]}]}, "item_files": {"attribute_name": "ファイル情報", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2018-11-07"}], "displaytype": "detail", "download_preview_message": "", "file_order": 0, "filename": "k12499_abstract.pdf", "filesize": [{"value": "341.2 kB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "licensetype": "license_note", "mimetype": "application/pdf", "size": 341200.0, "url": {"label": "k12499_abstract", "objectType": "abstract", "url": "https://nagoya.repo.nii.ac.jp/record/26525/files/k12499_abstract.pdf"}, "version_id": "5d29ebc7-7ee8-45ef-8bd2-e90195d5d37e"}, {"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2018-11-07"}], "displaytype": "detail", "download_preview_message": "", "file_order": 1, "filename": "k12499_review.pdf", "filesize": [{"value": "122.1 kB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "licensetype": "license_note", "mimetype": "application/pdf", "size": 122100.0, "url": {"label": "k12499_review", "objectType": "other", "url": "https://nagoya.repo.nii.ac.jp/record/26525/files/k12499_review.pdf"}, "version_id": "641ca8ba-01e2-4bb8-8817-3419e34a574f"}, {"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2018-11-07"}], "displaytype": "detail", "download_preview_message": "", "file_order": 2, "filename": "k12499_summary.pdf", "filesize": [{"value": "300.9 kB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "licensetype": "license_note", "mimetype": "application/pdf", "size": 300900.0, "url": {"label": "k12499_summary", "objectType": "summary", "url": "https://nagoya.repo.nii.ac.jp/record/26525/files/k12499_summary.pdf"}, "version_id": "7b085938-5c71-4b1b-8fd7-c238e2dd12df"}]}, "item_language": {"attribute_name": "言語", "attribute_value_mlt": [{"subitem_language": "jpn"}]}, "item_resource_type": {"attribute_name": "資源タイプ", "attribute_value_mlt": [{"resourcetype": "doctoral thesis", "resourceuri": "http://purl.org/coar/resource_type/c_db06"}]}, "item_title": "Si基板上GaN高周波パワーデバイスに向けたAlN下地層及びGaN層の高品質化に関する研究", "item_titles": {"attribute_name": "タイトル", "attribute_value_mlt": [{"subitem_title": "Si基板上GaN高周波パワーデバイスに向けたAlN下地層及びGaN層の高品質化に関する研究", "subitem_title_language": "ja"}]}, "item_type_id": "12", "owner": "1", "path": ["607"], "permalink_uri": "http://hdl.handle.net/2237/00028728", "pubdate": {"attribute_name": "PubDate", "attribute_value": "2018-10-19"}, "publish_date": "2018-10-19", "publish_status": "0", "recid": "26525", "relation": {}, "relation_version_is_last": true, "title": ["Si基板上GaN高周波パワーデバイスに向けたAlN下地層及びGaN層の高品質化に関する研究"], "weko_shared_id": -1}