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  1. F200 未来材料・システム研究所
  2. F200a 雑誌掲載論文
  3. 学術雑誌

Effect of substrate misorientation on the concentration of impurities and surface morphology of an epitaxial GaN layer on N-polar GaN substrate by MOVPE

http://hdl.handle.net/2237/00030416
http://hdl.handle.net/2237/00030416
a18e349c-4e7b-4d31-960b-a74e8c089295
名前 / ファイル ライセンス アクション
N-polar_accepted_Nagamatsu.pdf N-polar_accepted_Nagamatsu (806.2 kB)
Item type 学術雑誌論文 / Journal Article(1)
公開日 2019-06-12
タイトル
タイトル Effect of substrate misorientation on the concentration of impurities and surface morphology of an epitaxial GaN layer on N-polar GaN substrate by MOVPE
言語 en
著者 Nagamatsu, Kentaro

× Nagamatsu, Kentaro

WEKO 91876

en Nagamatsu, Kentaro

Search repository
Ando, Yuto

× Ando, Yuto

WEKO 91877

en Ando, Yuto

Search repository
Kono, Tsukasa

× Kono, Tsukasa

WEKO 91878

en Kono, Tsukasa

Search repository
Cheong, Heajeong

× Cheong, Heajeong

WEKO 91879

en Cheong, Heajeong

Search repository
Nitta, Shugo

× Nitta, Shugo

WEKO 91880

en Nitta, Shugo

Search repository
Honda, Yoshio

× Honda, Yoshio

WEKO 91881

en Honda, Yoshio

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Pristovsek, Markus

× Pristovsek, Markus

WEKO 91882

en Pristovsek, Markus

Search repository
Amano, Hiroshi

× Amano, Hiroshi

WEKO 91883

en Amano, Hiroshi

Search repository
アクセス権
アクセス権 open access
アクセス権URI http://purl.org/coar/access_right/c_abf2
権利
言語 en
権利情報 © 2019. This manuscript version is made available under the CC-BY-NC-ND 4.0 license http://creativecommons.org/licenses/by-nc-nd/4.0/
キーワード
主題Scheme Other
主題 Impurities
キーワード
主題Scheme Other
主題 Surfaces
キーワード
主題Scheme Other
主題 Metalorganic vapor-phase epitaxy
キーワード
主題Scheme Other
主題 Nitrides
抄録
内容記述 This study examines the effect of (000−1) GaN substrate misorientation on the residual impurities and surface morphology of N-polar GaN grown by metalorganic vapor-phase epitaxy. Carbon, silicon, and oxygen concentrations decreased with increasing GaN substrate misorientation angle, with the lowest impurity concentration achieved for a misorientation angle of 2° toward the m-axis, with 6×10^15cm^−3 carbon, 6×10^15cm^−3 silicon, and 4×10^17cm^−3 oxygen atoms. The oxygen concentration was measured at a depth of 0.5μm below the wafer surface, and the oxygen concentration decreased with increasing thickness. The incorporation of carbon and oxygen revealed a strong dependence on the misorientation angle. The step distance height of the steps parallel to the [11−20] direction (or perpendicular to the [1−100] m-direction) was confirmed to be a double-height layer step. This phenomenon indicated that m-direction steps are stable for N-polar growth in GaN. In cases of large misorientation toward the m-axis in of the GaN substrate it was difficult to control the misorientation perpendicular to the nominal direction leading to a-axis direction by wafer bowing at wafer manufacturing. Therefore, step-bunching was generated for each symmetric m-axis due to an increase in the compound's off-angle, thus causing the surface roughness to become large.
言語 en
内容記述タイプ Abstract
内容記述
内容記述 ファイル公開:2021-04-15
言語 ja
内容記述タイプ Other
出版者
言語 en
出版者 Elsevier
言語
言語 eng
資源タイプ
資源タイプresource http://purl.org/coar/resource_type/c_6501
タイプ journal article
出版タイプ
出版タイプ AM
出版タイプResource http://purl.org/coar/version/c_ab4af688f83e57aa
DOI
関連タイプ isVersionOf
識別子タイプ DOI
関連識別子 https://doi.org/10.1016/j.jcrysgro.2019.02.013
ISSN(print)
収録物識別子タイプ PISSN
収録物識別子 0022-0248
書誌情報 en : Journal of Crystal Growth

巻 512, p. 78-83, 発行日 2019-04-15
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