{"_buckets": {"deposit": "428d4173-51fe-40bd-9c35-12b21495d385"}, "_deposit": {"id": "28220", "owners": [], "pid": {"revision_id": 0, "type": "depid", "value": "28220"}, "status": "published"}, "_oai": {"id": "oai:nagoya.repo.nii.ac.jp:00028220"}, "item_10_biblio_info_6": {"attribute_name": "\u66f8\u8a8c\u60c5\u5831", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2019-04-15", "bibliographicIssueDateType": "Issued"}, "bibliographicPageEnd": "83", "bibliographicPageStart": "78", "bibliographicVolumeNumber": "512", "bibliographic_titles": [{"bibliographic_title": "Journal of Crystal Growth"}]}]}, "item_10_description_4": {"attribute_name": "\u6284\u9332", "attribute_value_mlt": [{"subitem_description": "This study examines the effect of (000\u22121) GaN substrate misorientation on the residual impurities and surface morphology of N-polar GaN grown by metalorganic vapor-phase epitaxy. Carbon, silicon, and oxygen concentrations decreased with increasing GaN substrate misorientation angle, with the lowest impurity concentration achieved for a misorientation angle of 2\u00b0 toward the m-axis, with 6\u00d710^15cm^\u22123 carbon, 6\u00d710^15cm^\u22123 silicon, and 4\u00d710^17cm^\u22123 oxygen atoms. The oxygen concentration was measured at a depth of 0.5\u03bcm below the wafer surface, and the oxygen concentration decreased with increasing thickness. The incorporation of carbon and oxygen revealed a strong dependence on the misorientation angle. The step distance height of the steps parallel to the [11\u221220] direction (or perpendicular to the [1\u2212100] m-direction) was confirmed to be a double-height layer step. This phenomenon indicated that m-direction steps are stable for N-polar growth in GaN. In cases of large misorientation toward the m-axis in of the GaN substrate it was difficult to control the misorientation perpendicular to the nominal direction leading to a-axis direction by wafer bowing at wafer manufacturing. Therefore, step-bunching was generated for each symmetric m-axis due to an increase in the compound\u0027s off-angle, thus causing the surface roughness to become large.", "subitem_description_type": "Abstract"}]}, "item_10_description_5": {"attribute_name": "\u5185\u5bb9\u8a18\u8ff0", "attribute_value_mlt": [{"subitem_description": "\u30d5\u30a1\u30a4\u30eb\u516c\u958b\uff1a2021-04-15", "subitem_description_type": "Other"}]}, "item_10_publisher_32": {"attribute_name": "\u51fa\u7248\u8005", "attribute_value_mlt": [{"subitem_publisher": "Elsevier"}]}, "item_10_relation_11": {"attribute_name": "DOI", "attribute_value_mlt": [{"subitem_relation_type_id": {"subitem_relation_type_id_text": "https://doi.org/10.1016/j.jcrysgro.2019.02.013", "subitem_relation_type_select": "DOI"}}]}, "item_10_rights_12": {"attribute_name": "\u6a29\u5229", "attribute_value_mlt": [{"subitem_rights": "\u00a9 2019. This manuscript version is made available under the CC-BY-NC-ND 4.0 license http://creativecommons.org/licenses/by-nc-nd/4.0/"}]}, "item_10_select_15": {"attribute_name": "\u8457\u8005\u7248\u30d5\u30e9\u30b0", "attribute_value_mlt": [{"subitem_select_item": "author"}]}, "item_10_source_id_61": {"attribute_name": "ISSN\uff08print\uff09", "attribute_value_mlt": [{"subitem_source_identifier": "0022-0248", "subitem_source_identifier_type": "ISSN"}]}, "item_creator": {"attribute_name": "\u8457\u8005", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "Nagamatsu, Kentaro"}], "nameIdentifiers": [{"nameIdentifier": "91876", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Ando, Yuto"}], "nameIdentifiers": [{"nameIdentifier": "91877", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Kono, Tsukasa"}], "nameIdentifiers": [{"nameIdentifier": "91878", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Cheong, Heajeong"}], "nameIdentifiers": [{"nameIdentifier": "91879", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Nitta, Shugo"}], "nameIdentifiers": [{"nameIdentifier": "91880", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Honda, Yoshio"}], "nameIdentifiers": [{"nameIdentifier": "91881", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Pristovsek, Markus"}], "nameIdentifiers": [{"nameIdentifier": "91882", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Amano, Hiroshi"}], "nameIdentifiers": [{"nameIdentifier": "91883", "nameIdentifierScheme": "WEKO"}]}]}, "item_files": {"attribute_name": "\u30d5\u30a1\u30a4\u30eb\u60c5\u5831", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2021-04-15"}], "displaytype": "detail", "download_preview_message": "", "file_order": 0, "filename": "N-polar_accepted_Nagamatsu.pdf", "filesize": [{"value": "806.2 kB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "licensetype": "license_free", "mimetype": "application/pdf", "size": 806200.0, "url": {"label": "N-polar_accepted_Nagamatsu", "url": "https://nagoya.repo.nii.ac.jp/record/28220/files/N-polar_accepted_Nagamatsu.pdf"}, "version_id": "f8f1e906-002c-4e0a-929c-5c08bf43baff"}]}, "item_keyword": {"attribute_name": "\u30ad\u30fc\u30ef\u30fc\u30c9", "attribute_value_mlt": [{"subitem_subject": "Impurities", "subitem_subject_scheme": "Other"}, {"subitem_subject": "Surfaces", "subitem_subject_scheme": "Other"}, {"subitem_subject": "Metalorganic vapor-phase epitaxy", "subitem_subject_scheme": "Other"}, {"subitem_subject": "Nitrides", "subitem_subject_scheme": "Other"}]}, "item_language": {"attribute_name": "\u8a00\u8a9e", "attribute_value_mlt": [{"subitem_language": "eng"}]}, "item_resource_type": {"attribute_name": "\u8cc7\u6e90\u30bf\u30a4\u30d7", "attribute_value_mlt": [{"resourcetype": "journal article", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "Effect of substrate misorientation on the concentration of impurities and surface morphology of an epitaxial GaN layer on N-polar GaN substrate by MOVPE", "item_titles": {"attribute_name": "\u30bf\u30a4\u30c8\u30eb", "attribute_value_mlt": [{"subitem_title": "Effect of substrate misorientation on the concentration of impurities and surface morphology of an epitaxial GaN layer on N-polar GaN substrate by MOVPE"}]}, "item_type_id": "10", "owner": "1", "path": ["673/674/675"], "permalink_uri": "http://hdl.handle.net/2237/00030416", "pubdate": {"attribute_name": "\u516c\u958b\u65e5", "attribute_name_i18n": "\u516c\u958b\u65e5", "attribute_value": "2019-06-12"}, "publish_date": "2019-06-12", "publish_status": "0", "recid": "28220", "relation": {}, "relation_version_is_last": true, "title": ["Effect of substrate misorientation on the concentration of impurities and surface morphology of an epitaxial GaN layer on N-polar GaN substrate by MOVPE"], "weko_shared_id": null}