{"_buckets": {"deposit": "428d4173-51fe-40bd-9c35-12b21495d385"}, "_deposit": {"id": "28220", "owners": [], "pid": {"revision_id": 0, "type": "depid", "value": "28220"}, "status": "published"}, "_oai": {"id": "oai:nagoya.repo.nii.ac.jp:00028220", "sets": ["675"]}, "author_link": ["91876", "91877", "91878", "91879", "91880", "91881", "91882", "91883"], "item_10_biblio_info_6": {"attribute_name": "書誌情報", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2019-04-15", "bibliographicIssueDateType": "Issued"}, "bibliographicPageEnd": "83", "bibliographicPageStart": "78", "bibliographicVolumeNumber": "512", "bibliographic_titles": [{"bibliographic_title": "Journal of Crystal Growth", "bibliographic_titleLang": "en"}]}]}, "item_10_description_4": {"attribute_name": "抄録", "attribute_value_mlt": [{"subitem_description": "This study examines the effect of (000−1) GaN substrate misorientation on the residual impurities and surface morphology of N-polar GaN grown by metalorganic vapor-phase epitaxy. Carbon, silicon, and oxygen concentrations decreased with increasing GaN substrate misorientation angle, with the lowest impurity concentration achieved for a misorientation angle of 2° toward the m-axis, with 6×10^15cm^−3 carbon, 6×10^15cm^−3 silicon, and 4×10^17cm^−3 oxygen atoms. The oxygen concentration was measured at a depth of 0.5μm below the wafer surface, and the oxygen concentration decreased with increasing thickness. The incorporation of carbon and oxygen revealed a strong dependence on the misorientation angle. The step distance height of the steps parallel to the [11−20] direction (or perpendicular to the [1−100] m-direction) was confirmed to be a double-height layer step. This phenomenon indicated that m-direction steps are stable for N-polar growth in GaN. In cases of large misorientation toward the m-axis in of the GaN substrate it was difficult to control the misorientation perpendicular to the nominal direction leading to a-axis direction by wafer bowing at wafer manufacturing. Therefore, step-bunching was generated for each symmetric m-axis due to an increase in the compound\u0027s off-angle, thus causing the surface roughness to become large.", "subitem_description_language": "en", "subitem_description_type": "Abstract"}]}, "item_10_description_5": {"attribute_name": "内容記述", "attribute_value_mlt": [{"subitem_description": "ファイル公開：2021-04-15", "subitem_description_language": "ja", "subitem_description_type": "Other"}]}, "item_10_publisher_32": {"attribute_name": "出版者", "attribute_value_mlt": [{"subitem_publisher": "Elsevier", "subitem_publisher_language": "en"}]}, "item_10_relation_11": {"attribute_name": "DOI", "attribute_value_mlt": [{"subitem_relation_type": "isVersionOf", "subitem_relation_type_id": {"subitem_relation_type_id_text": "https://doi.org/10.1016/j.jcrysgro.2019.02.013", "subitem_relation_type_select": "DOI"}}]}, "item_10_rights_12": {"attribute_name": "権利", "attribute_value_mlt": [{"subitem_rights": "© 2019. This manuscript version is made available under the CC-BY-NC-ND 4.0 license http://creativecommons.org/licenses/by-nc-nd/4.0/", "subitem_rights_language": "en"}]}, "item_10_select_15": {"attribute_name": "著者版フラグ", "attribute_value_mlt": [{"subitem_select_item": "author"}]}, "item_10_source_id_61": {"attribute_name": "ISSN（print）", "attribute_value_mlt": [{"subitem_source_identifier": "0022-0248", "subitem_source_identifier_type": "PISSN"}]}, "item_1615787544753": {"attribute_name": "出版タイプ", "attribute_value_mlt": [{"subitem_version_resource": "http://purl.org/coar/version/c_ab4af688f83e57aa", "subitem_version_type": "AM"}]}, "item_access_right": {"attribute_name": "アクセス権", "attribute_value_mlt": [{"subitem_access_right": "open access", "subitem_access_right_uri": "http://purl.org/coar/access_right/c_abf2"}]}, "item_creator": {"attribute_name": "著者", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "Nagamatsu, Kentaro", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "91876", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Ando, Yuto", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "91877", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Kono, Tsukasa", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "91878", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Cheong, Heajeong", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "91879", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Nitta, Shugo", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "91880", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Honda, Yoshio", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "91881", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Pristovsek, Markus", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "91882", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Amano, Hiroshi", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "91883", "nameIdentifierScheme": "WEKO"}]}]}, "item_files": {"attribute_name": "ファイル情報", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2021-04-15"}], "displaytype": "detail", "download_preview_message": "", "file_order": 0, "filename": "N-polar_accepted_Nagamatsu.pdf", "filesize": [{"value": "806.2 kB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "licensetype": "license_note", "mimetype": "application/pdf", "size": 806200.0, "url": {"label": "N-polar_accepted_Nagamatsu", "objectType": "fulltext", "url": "https://nagoya.repo.nii.ac.jp/record/28220/files/N-polar_accepted_Nagamatsu.pdf"}, "version_id": "f8f1e906-002c-4e0a-929c-5c08bf43baff"}]}, "item_keyword": {"attribute_name": "キーワード", "attribute_value_mlt": [{"subitem_subject": "Impurities", "subitem_subject_scheme": "Other"}, {"subitem_subject": "Surfaces", "subitem_subject_scheme": "Other"}, {"subitem_subject": "Metalorganic vapor-phase epitaxy", "subitem_subject_scheme": "Other"}, {"subitem_subject": "Nitrides", "subitem_subject_scheme": "Other"}]}, "item_language": {"attribute_name": "言語", "attribute_value_mlt": [{"subitem_language": "eng"}]}, "item_resource_type": {"attribute_name": "資源タイプ", "attribute_value_mlt": [{"resourcetype": "journal article", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "Effect of substrate misorientation on the concentration of impurities and surface morphology of an epitaxial GaN layer on N-polar GaN substrate by MOVPE", "item_titles": {"attribute_name": "タイトル", "attribute_value_mlt": [{"subitem_title": "Effect of substrate misorientation on the concentration of impurities and surface morphology of an epitaxial GaN layer on N-polar GaN substrate by MOVPE", "subitem_title_language": "en"}]}, "item_type_id": "10", "owner": "1", "path": ["675"], "permalink_uri": "http://hdl.handle.net/2237/00030416", "pubdate": {"attribute_name": "PubDate", "attribute_value": "2019-06-12"}, "publish_date": "2019-06-12", "publish_status": "0", "recid": "28220", "relation": {}, "relation_version_is_last": true, "title": ["Effect of substrate misorientation on the concentration of impurities and surface morphology of an epitaxial GaN layer on N-polar GaN substrate by MOVPE"], "weko_shared_id": -1}