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Effect of substrate misorientation on the concentration of impurities and surface morphology of an epitaxial GaN layer on N-polar GaN substrate by MOVPE
http://hdl.handle.net/2237/00030416
http://hdl.handle.net/2237/00030416a18e349c-4e7b-4d31-960b-a74e8c089295
名前 / ファイル | ライセンス | アクション |
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2019-06-12 | |||||
タイトル | ||||||
タイトル | Effect of substrate misorientation on the concentration of impurities and surface morphology of an epitaxial GaN layer on N-polar GaN substrate by MOVPE | |||||
言語 | en | |||||
著者 |
Nagamatsu, Kentaro
× Nagamatsu, Kentaro× Ando, Yuto× Kono, Tsukasa× Cheong, Heajeong× Nitta, Shugo× Honda, Yoshio× Pristovsek, Markus× Amano, Hiroshi |
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アクセス権 | ||||||
アクセス権 | open access | |||||
アクセス権URI | http://purl.org/coar/access_right/c_abf2 | |||||
権利 | ||||||
言語 | en | |||||
権利情報 | © 2019. This manuscript version is made available under the CC-BY-NC-ND 4.0 license http://creativecommons.org/licenses/by-nc-nd/4.0/ | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | Impurities | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | Surfaces | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | Metalorganic vapor-phase epitaxy | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | Nitrides | |||||
抄録 | ||||||
内容記述 | This study examines the effect of (000−1) GaN substrate misorientation on the residual impurities and surface morphology of N-polar GaN grown by metalorganic vapor-phase epitaxy. Carbon, silicon, and oxygen concentrations decreased with increasing GaN substrate misorientation angle, with the lowest impurity concentration achieved for a misorientation angle of 2° toward the m-axis, with 6×10^15cm^−3 carbon, 6×10^15cm^−3 silicon, and 4×10^17cm^−3 oxygen atoms. The oxygen concentration was measured at a depth of 0.5μm below the wafer surface, and the oxygen concentration decreased with increasing thickness. The incorporation of carbon and oxygen revealed a strong dependence on the misorientation angle. The step distance height of the steps parallel to the [11−20] direction (or perpendicular to the [1−100] m-direction) was confirmed to be a double-height layer step. This phenomenon indicated that m-direction steps are stable for N-polar growth in GaN. In cases of large misorientation toward the m-axis in of the GaN substrate it was difficult to control the misorientation perpendicular to the nominal direction leading to a-axis direction by wafer bowing at wafer manufacturing. Therefore, step-bunching was generated for each symmetric m-axis due to an increase in the compound's off-angle, thus causing the surface roughness to become large. | |||||
言語 | en | |||||
内容記述タイプ | Abstract | |||||
内容記述 | ||||||
内容記述 | ファイル公開:2021-04-15 | |||||
言語 | ja | |||||
内容記述タイプ | Other | |||||
出版者 | ||||||
言語 | en | |||||
出版者 | Elsevier | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプresource | http://purl.org/coar/resource_type/c_6501 | |||||
タイプ | journal article | |||||
出版タイプ | ||||||
出版タイプ | AM | |||||
出版タイプResource | http://purl.org/coar/version/c_ab4af688f83e57aa | |||||
DOI | ||||||
関連タイプ | isVersionOf | |||||
識別子タイプ | DOI | |||||
関連識別子 | https://doi.org/10.1016/j.jcrysgro.2019.02.013 | |||||
ISSN(print) | ||||||
収録物識別子タイプ | PISSN | |||||
収録物識別子 | 0022-0248 | |||||
書誌情報 |
en : Journal of Crystal Growth 巻 512, p. 78-83, 発行日 2019-04-15 |
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著者版フラグ | ||||||
値 | author |