ログイン
言語:

WEKO3

  • トップ
  • ランキング
To
lat lon distance
To

Field does not validate



インデックスリンク

インデックスツリー

メールアドレスを入力してください。

WEKO

One fine body…

WEKO

One fine body…

アイテム

{"_buckets": {"deposit": "d15cdb6f-a3c7-434d-b3e2-8d920b071bd7"}, "_deposit": {"id": "29397", "owners": [], "pid": {"revision_id": 0, "type": "depid", "value": "29397"}, "status": "published"}, "_oai": {"id": "oai:nagoya.repo.nii.ac.jp:00029397", "sets": ["675"]}, "author_link": ["96541", "96542", "96543", "96544", "96545", "96546", "96547"], "item_10_biblio_info_6": {"attribute_name": "書誌情報", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2019-11-07", "bibliographicIssueDateType": "Issued"}, "bibliographicIssueNumber": "12", "bibliographicPageStart": "124003", "bibliographicVolumeNumber": "12", "bibliographic_titles": [{"bibliographic_title": "Applied Physics Express", "bibliographic_titleLang": "en"}]}]}, "item_10_description_4": {"attribute_name": "抄録", "attribute_value_mlt": [{"subitem_description": "We present a deep-ultraviolet semiconductor laser diode that operates under current injection at room temperature and at a very short wavelength. The laser structure was grown on the (0001) face of a single-crystal aluminum nitride substrate. The measured lasing wavelength was 271.8 nm with a pulsed duration of 50 ns and a repetition frequency of 2 kHz. A polarization-induced doping cladding layer was employed to achieve hole conductivity and injection without intentional impurity doping. Even with this undoped layer, we were still able to achieve a low operation voltage of 13.8 V at a lasing threshold current of 0.4 A.", "subitem_description_language": "en", "subitem_description_type": "Abstract"}]}, "item_10_description_5": {"attribute_name": "内容記述", "attribute_value_mlt": [{"subitem_description": "ファイル公開:2020-11-07", "subitem_description_language": "ja", "subitem_description_type": "Other"}]}, "item_10_publisher_32": {"attribute_name": "出版者", "attribute_value_mlt": [{"subitem_publisher": "IOP publishing", "subitem_publisher_language": "en"}]}, "item_10_relation_11": {"attribute_name": "DOI", "attribute_value_mlt": [{"subitem_relation_type": "isVersionOf", "subitem_relation_type_id": {"subitem_relation_type_id_text": "https://doi.org/10.7567/1882-0786/ab50e0", "subitem_relation_type_select": "DOI"}}]}, "item_10_rights_12": {"attribute_name": "権利", "attribute_value_mlt": [{"subitem_rights": "This is an author-created, un-copyedited version of an article published in {Applied Physics Express}. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at {https://doi.org/10.7567/1882-0786/ab50e0}. “This Accepted Manuscript is available for reuse under a CC BY-NC-ND 4.0 licence after the 12 month embargo period provided that all the terms of the licence are adhered to”", "subitem_rights_language": "en"}]}, "item_10_select_15": {"attribute_name": "著者版フラグ", "attribute_value_mlt": [{"subitem_select_item": "author"}]}, "item_10_source_id_61": {"attribute_name": "ISSN(print)", "attribute_value_mlt": [{"subitem_source_identifier": "1882-0778", "subitem_source_identifier_type": "PISSN"}]}, "item_1615787544753": {"attribute_name": "出版タイプ", "attribute_value_mlt": [{"subitem_version_resource": "http://purl.org/coar/version/c_ab4af688f83e57aa", "subitem_version_type": "AM"}]}, "item_access_right": {"attribute_name": "アクセス権", "attribute_value_mlt": [{"subitem_access_right": "open access", "subitem_access_right_uri": "http://purl.org/coar/access_right/c_abf2"}]}, "item_creator": {"attribute_name": "著者", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "Zhang, Ziyi", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "96541", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Kushimoto, Maki", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "96542", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Sakai, Tadayoshi", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "96543", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Sugiyama, Naoharu", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "96544", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Schowalter, Leo J.", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "96545", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Sasaoka, Chiaki", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "96546", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Amano, Hiroshi", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "96547", "nameIdentifierScheme": "WEKO"}]}]}, "item_files": {"attribute_name": "ファイル情報", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2020-11-07"}], "displaytype": "detail", "download_preview_message": "", "file_order": 0, "filename": "APEX-102907.R1_Proof_hi.pdf", "filesize": [{"value": "397.9 kB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "licensetype": "license_note", "mimetype": "application/pdf", "size": 397900.0, "url": {"label": "APEX-102907.R1_Proof_hi", "objectType": "fulltext", "url": "https://nagoya.repo.nii.ac.jp/record/29397/files/APEX-102907.R1_Proof_hi.pdf"}, "version_id": "f28bd7ee-9684-4d46-b3d7-ac3696a5440c"}]}, "item_language": {"attribute_name": "言語", "attribute_value_mlt": [{"subitem_language": "eng"}]}, "item_resource_type": {"attribute_name": "資源タイプ", "attribute_value_mlt": [{"resourcetype": "journal article", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "A 271.8 nm deep-ultraviolet laser diode for room temperature operation", "item_titles": {"attribute_name": "タイトル", "attribute_value_mlt": [{"subitem_title": "A 271.8 nm deep-ultraviolet laser diode for room temperature operation", "subitem_title_language": "en"}]}, "item_type_id": "10", "owner": "1", "path": ["675"], "permalink_uri": "http://hdl.handle.net/2237/00031584", "pubdate": {"attribute_name": "PubDate", "attribute_value": "2020-03-12"}, "publish_date": "2020-03-12", "publish_status": "0", "recid": "29397", "relation": {}, "relation_version_is_last": true, "title": ["A 271.8 nm deep-ultraviolet laser diode for room temperature operation"], "weko_shared_id": -1}
  1. F200 未来材料・システム研究所
  2. F200a 雑誌掲載論文
  3. 学術雑誌

A 271.8 nm deep-ultraviolet laser diode for room temperature operation

http://hdl.handle.net/2237/00031584
http://hdl.handle.net/2237/00031584
e244cebd-850d-4125-b689-0f566b773d2f
名前 / ファイル ライセンス アクション
APEX-102907.R1_Proof_hi.pdf APEX-102907.R1_Proof_hi (397.9 kB)
Item type 学術雑誌論文 / Journal Article(1)
公開日 2020-03-12
タイトル
タイトル A 271.8 nm deep-ultraviolet laser diode for room temperature operation
言語 en
著者 Zhang, Ziyi

× Zhang, Ziyi

WEKO 96541

en Zhang, Ziyi

Search repository
Kushimoto, Maki

× Kushimoto, Maki

WEKO 96542

en Kushimoto, Maki

Search repository
Sakai, Tadayoshi

× Sakai, Tadayoshi

WEKO 96543

en Sakai, Tadayoshi

Search repository
Sugiyama, Naoharu

× Sugiyama, Naoharu

WEKO 96544

en Sugiyama, Naoharu

Search repository
Schowalter, Leo J.

× Schowalter, Leo J.

WEKO 96545

en Schowalter, Leo J.

Search repository
Sasaoka, Chiaki

× Sasaoka, Chiaki

WEKO 96546

en Sasaoka, Chiaki

Search repository
Amano, Hiroshi

× Amano, Hiroshi

WEKO 96547

en Amano, Hiroshi

Search repository
アクセス権
アクセス権 open access
アクセス権URI http://purl.org/coar/access_right/c_abf2
権利
言語 en
権利情報 This is an author-created, un-copyedited version of an article published in {Applied Physics Express}. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at {https://doi.org/10.7567/1882-0786/ab50e0}. “This Accepted Manuscript is available for reuse under a CC BY-NC-ND 4.0 licence after the 12 month embargo period provided that all the terms of the licence are adhered to”
抄録
内容記述 We present a deep-ultraviolet semiconductor laser diode that operates under current injection at room temperature and at a very short wavelength. The laser structure was grown on the (0001) face of a single-crystal aluminum nitride substrate. The measured lasing wavelength was 271.8 nm with a pulsed duration of 50 ns and a repetition frequency of 2 kHz. A polarization-induced doping cladding layer was employed to achieve hole conductivity and injection without intentional impurity doping. Even with this undoped layer, we were still able to achieve a low operation voltage of 13.8 V at a lasing threshold current of 0.4 A.
言語 en
内容記述タイプ Abstract
内容記述
内容記述 ファイル公開:2020-11-07
言語 ja
内容記述タイプ Other
出版者
言語 en
出版者 IOP publishing
言語
言語 eng
資源タイプ
資源タイプresource http://purl.org/coar/resource_type/c_6501
タイプ journal article
出版タイプ
出版タイプ AM
出版タイプResource http://purl.org/coar/version/c_ab4af688f83e57aa
DOI
関連タイプ isVersionOf
識別子タイプ DOI
関連識別子 https://doi.org/10.7567/1882-0786/ab50e0
ISSN(print)
収録物識別子タイプ PISSN
収録物識別子 1882-0778
書誌情報 en : Applied Physics Express

巻 12, 号 12, p. 124003, 発行日 2019-11-07
著者版フラグ
値 author
戻る
0
views
See details
Views

Versions

Ver.1 2021-03-01 09:33:55.189123
Show All versions

Share

Mendeley Twitter Facebook Print Addthis

Cite as

エクスポート

OAI-PMH
  • OAI-PMH JPCOAR
  • OAI-PMH DublinCore
  • OAI-PMH DDI
Other Formats
  • JSON
  • BIBTEX

Confirm


Powered by WEKO3


Powered by WEKO3