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  1. F200 未来材料・システム研究所
  2. F200a 雑誌掲載論文
  3. 学術雑誌

Lattice bow in thick, homoepitaxial GaN layers for vertical power devices

http://hdl.handle.net/2237/00032639
http://hdl.handle.net/2237/00032639
ab75eaa0-b072-487d-b552-3b4a37689318
名前 / ファイル ライセンス アクション
Manuscript_final.pdf Manuscript_final (937.3 kB)
Item type 学術雑誌論文 / Journal Article(1)
公開日 2020-09-16
タイトル
タイトル Lattice bow in thick, homoepitaxial GaN layers for vertical power devices
言語 en
著者 Liu, Qiang

× Liu, Qiang

WEKO 101259

en Liu, Qiang

Search repository
Fujimoto, Naoki

× Fujimoto, Naoki

WEKO 101260

en Fujimoto, Naoki

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Shen, Jian

× Shen, Jian

WEKO 101261

en Shen, Jian

Search repository
Nitta, Shugo

× Nitta, Shugo

WEKO 101262

en Nitta, Shugo

Search repository
Tanaka, Atsushi

× Tanaka, Atsushi

WEKO 101263

en Tanaka, Atsushi

Search repository
Honda, Yoshio

× Honda, Yoshio

WEKO 101264

en Honda, Yoshio

Search repository
Sitar, Zlatko

× Sitar, Zlatko

WEKO 101265

en Sitar, Zlatko

Search repository
Boćkowski, Michał

× Boćkowski, Michał

WEKO 101266

en Boćkowski, Michał

Search repository
Kumagai, Yoshinao

× Kumagai, Yoshinao

WEKO 101267

en Kumagai, Yoshinao

Search repository
Amano, Hiroshi

× Amano, Hiroshi

WEKO 101268

en Amano, Hiroshi

Search repository
アクセス権
アクセス権 open access
アクセス権URI http://purl.org/coar/access_right/c_abf2
権利
言語 en
権利情報 © 2020. This manuscript version is made available under the CC-BY-NC-ND 4.0 license http://creativecommons.org/licenses/by-nc-nd/4.0/
キーワード
主題Scheme Other
主題 attice bow
キーワード
主題Scheme Other
主題 hick GaN homoepitaxy
キーワード
主題Scheme Other
主題 itrides
キーワード
主題Scheme Other
主題 emiconducting III-V materials
キーワード
主題Scheme Other
主題 ertical power devices
抄録
内容記述 Lattice bow generated by 40 µm thick HVPE homoepitaxial layers on commercial free-standing, ammonothermal and HVPE GaN wafers was studied. While a change in lattice bow was measured for all wafers, the additional bow on the ammonothermal GaN wafers was minimal. The main driving force for the observed increase in the lattice bow for HVPE wafers was related to stress in the films generated by the elongation of dislocations via climb and generation of new dislocations at the homoepitaxial interface. Lattice bow is a crucial wafer parameter as it determines the variation of the offcut across the surface. If an offcut variation of 0.1° is allowed for desired control surface morphology, composition of alloys, and uniformity of doping on this surface, the measured bow on the two HVPE GaN wafers and one ammonothermal GaN wafer limits their uniformity-diameter to ~0.5″, 1″ and >4″, respectively.
言語 en
内容記述タイプ Abstract
内容記述
内容記述 ファイル公開:2022-06-01
言語 ja
内容記述タイプ Other
出版者
言語 en
出版者 Elsevier
言語
言語 eng
資源タイプ
資源タイプresource http://purl.org/coar/resource_type/c_6501
タイプ journal article
出版タイプ
出版タイプ AM
出版タイプResource http://purl.org/coar/version/c_ab4af688f83e57aa
DOI
関連タイプ isVersionOf
識別子タイプ DOI
関連識別子 https://doi.org/10.1016/j.jcrysgro.2020.125643
ISSN(print)
収録物識別子タイプ PISSN
収録物識別子 0022-0248
書誌情報 en : Journal of Crystal Growth

巻 539, p. 125643, 発行日 2020-06-01
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