ログイン
言語:

WEKO3

  • トップ
  • コミュニティ
  • ランキング
AND
To
lat lon distance
To

Field does not validate



インデックスリンク

インデックスツリー

メールアドレスを入力してください。

WEKO

One fine body…

WEKO

One fine body…

アイテム

{"_buckets": {"deposit": "49874357-509e-4f45-9db4-cd0bdaa845e4"}, "_deposit": {"id": "30456", "owners": [], "pid": {"revision_id": 0, "type": "depid", "value": "30456"}, "status": "published"}, "_oai": {"id": "oai:nagoya.repo.nii.ac.jp:00030456"}, "item_10_biblio_info_6": {"attribute_name": "\u66f8\u8a8c\u60c5\u5831", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2020-01-29", "bibliographicIssueDateType": "Issued"}, "bibliographicIssueNumber": "3", "bibliographicPageStart": "035004", "bibliographicVolumeNumber": "35", "bibliographic_titles": [{"bibliographic_title": "Semiconductor Science and Technology"}]}]}, "item_10_description_4": {"attribute_name": "\u6284\u9332", "attribute_value_mlt": [{"subitem_description": "Indium incorporation and the optical properties of Inx Al1\u2212x N layers (0 \u2264 x \u2264 0.45) grown by metal-organic vapour phase epitaxy have been investigated simultaneously on polar (0001), untwinned semipolar (10overline 13) and nonpolar (10overline 10) AlN templates, which were prepared on planar sapphire substrates. The InN mole fraction XInN of the layers was tuned by changing growth temperature from 660\u00b0C to 860\u00b0C. XInN determined by x-ray diffraction was found to be comparable for the polar, semipolar and nonpolar surface orientations. This is consistent with comparable effective bandgap energy of the layers obtained from optical transmission measurements at room temperature. The bandgap bowing parameter was found to be strongly composition-dependent. Room-temperature photoluminescence measurements showed impurity transitions for the layers with XInN \u2264 0.2, while InAlN near-band-edge luminescence was observed for the layers with higher XInN.", "subitem_description_type": "Abstract"}]}, "item_10_description_5": {"attribute_name": "\u5185\u5bb9\u8a18\u8ff0", "attribute_value_mlt": [{"subitem_description": "\u30d5\u30a1\u30a4\u30eb\u516c\u958b\uff1a2021-01-29", "subitem_description_type": "Other"}]}, "item_10_publisher_32": {"attribute_name": "\u51fa\u7248\u8005", "attribute_value_mlt": [{"subitem_publisher": "IOP publishing"}]}, "item_10_relation_11": {"attribute_name": "DOI", "attribute_value_mlt": [{"subitem_relation_type_id": {"subitem_relation_type_id_text": "https://doi.org/10.1088/1361-6641/ab63f1", "subitem_relation_type_select": "DOI"}}]}, "item_10_rights_12": {"attribute_name": "\u6a29\u5229", "attribute_value_mlt": [{"subitem_rights": "This is an author-created, un-copyedited version of an article published in {Semiconductor Science and Technology}. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at {https://doi.org/10.1088/1361-6641/ab63f1}.\u3000\u201cThis Accepted Manuscript is available for reuse under a CC BY-NC-ND 4.0 licence after the 12 month embargo period provided that all the terms of the licence are adhered to\u201d"}]}, "item_10_select_15": {"attribute_name": "\u8457\u8005\u7248\u30d5\u30e9\u30b0", "attribute_value_mlt": [{"subitem_select_item": "author"}]}, "item_10_source_id_61": {"attribute_name": "ISSN\uff08print\uff09", "attribute_value_mlt": [{"subitem_source_identifier": "0268-1242", "subitem_source_identifier_type": "ISSN"}]}, "item_creator": {"attribute_name": "\u8457\u8005", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "Dinh, Duc V"}], "nameIdentifiers": [{"nameIdentifier": "101281", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Hu, Nan"}], "nameIdentifiers": [{"nameIdentifier": "101282", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Honda, Yoshio"}], "nameIdentifiers": [{"nameIdentifier": "101283", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Amano, Hiroshi"}], "nameIdentifiers": [{"nameIdentifier": "101284", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Pristovsek, Markus"}], "nameIdentifiers": [{"nameIdentifier": "101285", "nameIdentifierScheme": "WEKO"}]}]}, "item_files": {"attribute_name": "\u30d5\u30a1\u30a4\u30eb\u60c5\u5831", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2021-01-29"}], "displaytype": "detail", "download_preview_message": "", "file_order": 0, "filename": "1st_InAlN_circulation_CBA.pdf", "filesize": [{"value": "791.5 kB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "licensetype": "license_free", "mimetype": "application/pdf", "size": 791500.0, "url": {"label": "1st_InAlN_circulation_CBA", "url": "https://nagoya.repo.nii.ac.jp/record/30456/files/1st_InAlN_circulation_CBA.pdf"}, "version_id": "b53a9958-42b0-44c6-ae6b-eb3673b147d3"}]}, "item_language": {"attribute_name": "\u8a00\u8a9e", "attribute_value_mlt": [{"subitem_language": "eng"}]}, "item_resource_type": {"attribute_name": "\u8cc7\u6e90\u30bf\u30a4\u30d7", "attribute_value_mlt": [{"resourcetype": "journal article", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "Indium incorporation and optical properties of polar, semipolar and nonpolar InAlN", "item_titles": {"attribute_name": "\u30bf\u30a4\u30c8\u30eb", "attribute_value_mlt": [{"subitem_title": "Indium incorporation and optical properties of polar, semipolar and nonpolar InAlN"}]}, "item_type_id": "10", "owner": "1", "path": ["673/674/675"], "permalink_uri": "http://hdl.handle.net/2237/00032641", "pubdate": {"attribute_name": "\u516c\u958b\u65e5", "attribute_value": "2020-09-16"}, "publish_date": "2020-09-16", "publish_status": "0", "recid": "30456", "relation": {}, "relation_version_is_last": true, "title": ["Indium incorporation and optical properties of polar, semipolar and nonpolar InAlN"], "weko_shared_id": null}
  1. F200 未来材料・システム研究所
  2. F200a 雑誌掲載論文
  3. 学術雑誌

Indium incorporation and optical properties of polar, semipolar and nonpolar InAlN

http://hdl.handle.net/2237/00032641
5ce68163-514c-41f8-baa2-240379dd4515
名前 / ファイル ライセンス アクション
1st_InAlN_circulation_CBA.pdf 1st_InAlN_circulation_CBA (791.5 kB)
Item type 学術雑誌論文 / Journal Article(1)
公開日 2020-09-16
タイトル
タイトル Indium incorporation and optical properties of polar, semipolar and nonpolar InAlN
著者 Dinh, Duc V

× Dinh, Duc V

WEKO 101281

Dinh, Duc V

Search repository
Hu, Nan

× Hu, Nan

WEKO 101282

Hu, Nan

Search repository
Honda, Yoshio

× Honda, Yoshio

WEKO 101283

Honda, Yoshio

Search repository
Amano, Hiroshi

× Amano, Hiroshi

WEKO 101284

Amano, Hiroshi

Search repository
Pristovsek, Markus

× Pristovsek, Markus

WEKO 101285

Pristovsek, Markus

Search repository
権利
権利情報 This is an author-created, un-copyedited version of an article published in {Semiconductor Science and Technology}. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at {https://doi.org/10.1088/1361-6641/ab63f1}. “This Accepted Manuscript is available for reuse under a CC BY-NC-ND 4.0 licence after the 12 month embargo period provided that all the terms of the licence are adhered to”
抄録
内容記述 Indium incorporation and the optical properties of Inx Al1−x N layers (0 ≤ x ≤ 0.45) grown by metal-organic vapour phase epitaxy have been investigated simultaneously on polar (0001), untwinned semipolar (10overline 13) and nonpolar (10overline 10) AlN templates, which were prepared on planar sapphire substrates. The InN mole fraction XInN of the layers was tuned by changing growth temperature from 660°C to 860°C. XInN determined by x-ray diffraction was found to be comparable for the polar, semipolar and nonpolar surface orientations. This is consistent with comparable effective bandgap energy of the layers obtained from optical transmission measurements at room temperature. The bandgap bowing parameter was found to be strongly composition-dependent. Room-temperature photoluminescence measurements showed impurity transitions for the layers with XInN ≤ 0.2, while InAlN near-band-edge luminescence was observed for the layers with higher XInN.
内容記述タイプ Abstract
内容記述
内容記述 ファイル公開:2021-01-29
内容記述タイプ Other
出版者
出版者 IOP publishing
言語
言語 eng
資源タイプ
資源タイプresource http://purl.org/coar/resource_type/c_6501
タイプ journal article
DOI
関連識別子
識別子タイプ DOI
関連識別子 https://doi.org/10.1088/1361-6641/ab63f1
ISSN(print)
収録物識別子タイプ ISSN
収録物識別子 0268-1242
書誌情報 Semiconductor Science and Technology

巻 35, 号 3, p. 035004, 発行日 2020-01-29
著者版フラグ
値 author
戻る
0
views
See details
Views

Versions

Ver.1 2021-03-01 08:49:11.007142
Show All versions

Share

Mendeley CiteULike Twitter Facebook Print Addthis

Cite as

Export

OAI-PMH
  • OAI-PMH JPCOAR
  • OAI-PMH DublinCore
  • OAI-PMH DDI
Other Formats
  • JSON
  • BIBTEX

Confirm


Powered by CERN Data Centre & Invenio


Powered by CERN Data Centre & Invenio