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  1. B200 工学部/工学研究科
  2. B200b 紀要
  3. Memoirs of the Faculty of Engineering, Nagoya University
  4. 38(2)

LPE growth of InGaAsP epitaxial layers on GaAs substrates

https://doi.org/10.18999/memfenu.38.2.183
5b70ba38-c8f1-466c-980b-5840ec6de1a6
名前 / ファイル ライセンス アクション
38-2-02.pdf 38-2-02.pdf (4.2 MB)
Item type 紀要論文 / Departmental Bulletin Paper(1)
公開日 2020-11-04
タイトル
タイトル LPE growth of InGaAsP epitaxial layers on GaAs substrates
言語 en
著者 Hiramatsu, Kazumasa

× Hiramatsu, Kazumasa

WEKO 102052

en Hiramatsu, Kazumasa

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Akasaki, Isamu

× Akasaki, Isamu

WEKO 102053

en Akasaki, Isamu

Search repository
Sawaki, Nobuhiko

× Sawaki, Nobuhiko

WEKO 102054

en Sawaki, Nobuhiko

Search repository
抄録
内容記述 Effects of various growth conditions on surface morphology and compositional non-uniformity of LPE (liquid phase epitaxy) layers of In[x]Ga[1][-x]As[y]P[1][-y] (y<0.01) on (100) GaAs are studied. (1) Growth conditions to obtain a smooth and uniform layer is found from results of change in the surface morphology. (2) The interface instability occurring under an undercooling condition in LPE process is studied by means of analysis of Fourier spectra of the surface morphology. (3) Compositional nonuniformity of InGaAsP LPE layers are investigated by means of the precision X-ray diffractometry. The compositional variation taking place at the initial growth stage during several seconds is found. The variation at the initial stage is analyzed theoretically by "growth lines" on an In-Ga-P phase diagram due to the diffusion-limited growth model by comparison with the experiments. Growth conditions to minimize the compositional variation is proposed.
言語 en
内容記述タイプ Abstract
出版者
出版者 Faculty of Engineering, Nagoya University
言語
言語 eng
資源タイプ
資源 http://purl.org/coar/resource_type/c_6501
タイプ departmental bulletin paper
ID登録
ID登録 10.18999/memfenu.38.2.183
ID登録タイプ JaLC
ISSN(print)
収録物識別子タイプ PISSN
収録物識別子 0027-7657
書誌情報 Memoirs of the Faculty of Engineering, Nagoya University

巻 38, 号 2, p. 183-207, 発行日 1987-03-31
著者版フラグ
値 publisher
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