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LPE growth of InGaAsP epitaxial layers on GaAs substrates
https://doi.org/10.18999/memfenu.38.2.183
https://doi.org/10.18999/memfenu.38.2.1835b70ba38-c8f1-466c-980b-5840ec6de1a6
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
38-2-02.pdf (4.2 MB)
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| Item type | 紀要論文 / Departmental Bulletin Paper(1) | |||||
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| 公開日 | 2020-11-04 | |||||
| タイトル | ||||||
| タイトル | LPE growth of InGaAsP epitaxial layers on GaAs substrates | |||||
| 言語 | en | |||||
| 著者 |
Hiramatsu, Kazumasa
× Hiramatsu, Kazumasa× Akasaki, Isamu× Sawaki, Nobuhiko |
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| アクセス権 | ||||||
| アクセス権 | open access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_abf2 | |||||
| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | Effects of various growth conditions on surface morphology and compositional non-uniformity of LPE (liquid phase epitaxy) layers of In[x]Ga[1][-x]As[y]P[1][-y] (y＜0.01) on (100) GaAs are studied. (1) Growth conditions to obtain a smooth and uniform layer is found from results of change in the surface morphology. (2) The interface instability occurring under an undercooling condition in LPE process is studied by means of analysis of Fourier spectra of the surface morphology. (3) Compositional nonuniformity of InGaAsP LPE layers are investigated by means of the precision X-ray diffractometry. The compositional variation taking place at the initial growth stage during several seconds is found. The variation at the initial stage is analyzed theoretically by "growth lines" on an In-Ga-P phase diagram due to the diffusion-limited growth model by comparison with the experiments. Growth conditions to minimize the compositional variation is proposed. | |||||
| 言語 | en | |||||
| 出版者 | ||||||
| 出版者 | Faculty of Engineering, Nagoya University | |||||
| 言語 | en | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源 | http://purl.org/coar/resource_type/c_6501 | |||||
| タイプ | departmental bulletin paper | |||||
| 出版タイプ | ||||||
| 出版タイプ | VoR | |||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
| ID登録 | ||||||
| ID登録 | 10.18999/memfenu.38.2.183 | |||||
| ID登録タイプ | JaLC | |||||
| ISSN（print） | ||||||
| 収録物識別子タイプ | PISSN | |||||
| 収録物識別子 | 0027-7657 | |||||
| 書誌情報 |
en : Memoirs of the Faculty of Engineering, Nagoya University 巻 38, 号 2, p. 183-207, 発行日 1987-03-31 |
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| 著者版フラグ | ||||||
| 値 | publisher | |||||
