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Double-wall carbon nanotube field-effect transistors: Ambipolar transport characteristics
http://hdl.handle.net/2237/7006
http://hdl.handle.net/2237/70062aae927d-910e-4f28-b036-0901115f5820
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
ApplPhysLett_84_2412.pdf (102.2 kB)
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| Item type | 学術雑誌論文 / Journal Article(1) | |||||
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| 公開日 | 2006-10-23 | |||||
| タイトル | ||||||
| タイトル | Double-wall carbon nanotube field-effect transistors: Ambipolar transport characteristics | |||||
| 言語 | en | |||||
| 著者 |
Shimada, Takashi
× Shimada, Takashi× Sugai, Toshiki× Ohno, Yutaka× Kishimoto, Shigeru× Mizutani, Takashi× Yoshida, Hiromichi× Okazaki, Toshiya× Shinohara, Hisanori |
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| アクセス権 | ||||||
| アクセス権 | open access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_abf2 | |||||
| 権利 | ||||||
| 言語 | en | |||||
| 権利情報 | Copyright (2004) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. | |||||
| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | Double-wall carbon nanotubes (DWNTs) have been used as channels of field-effect transistors (FETs) to obtain information on their transport characteristics. DWNTs-FETs show metallic or semiconducting behavior depending on the tube diameters. All the semiconducting DWNTs have exhibited both p- and n-type characteristics, the so-called ambipolar behavior which is absent in normal SWNTs-FETs. Comparisons between the subthreshold swing (S) factor of DWNTs and that of SWNTs indicate that DWNTs are better FET channels than SWNTs. | |||||
| 言語 | en | |||||
| 出版者 | ||||||
| 出版者 | American Institute of Physics | |||||
| 言語 | en | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプresource | http://purl.org/coar/resource_type/c_6501 | |||||
| タイプ | journal article | |||||
| 出版タイプ | ||||||
| 出版タイプ | VoR | |||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
| DOI | ||||||
| 関連タイプ | isVersionOf | |||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | https://doi.org/10.1063/1.1689404 | |||||
| ISSN | ||||||
| 収録物識別子タイプ | PISSN | |||||
| 収録物識別子 | 0003-6951 | |||||
| 書誌情報 |
en : Applied Physics Letters 巻 84, 号 13, p. 2412-2414, 発行日 2004-03-29 |
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| フォーマット | ||||||
| 値 | application/pdf | |||||
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| 値 | publisher | |||||
| URI | ||||||
| 識別子 | http://hdl.handle.net/2237/7006 | |||||
| 識別子タイプ | HDL | |||||
