{"_buckets": {"deposit": "6eff97df-0c5d-4547-bb18-50077445ce4e"}, "_deposit": {"id": "5472", "owners": [], "pid": {"revision_id": 0, "type": "depid", "value": "5472"}, "status": "published"}, "_oai": {"id": "oai:nagoya.repo.nii.ac.jp:00005472"}, "item_10_biblio_info_6": {"attribute_name": "\u66f8\u8a8c\u60c5\u5831", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "1999-05", "bibliographicIssueDateType": "Issued"}, "bibliographicIssueNumber": "3", "bibliographicPageEnd": "960", "bibliographicPageStart": "957", "bibliographicVolumeNumber": "17", "bibliographic_titles": [{"bibliographic_title": "Journal of Vacuum Science \u0026 Technology B"}]}]}, "item_10_description_4": {"attribute_name": "\u6284\u9332", "attribute_value_mlt": [{"subitem_description": "A novel gas source replacing fluorocarbon feed gases has been developed for preventing global warming. The novel gas source was designed to generate fluorocarbon species from polytetrafluoroethylene by CO_2 laser ablation. The species generated from the gas source were introduced into an electron cyclotron resonance (ECR) plasma employing Ar gases. To characterize the gas source, CF_x (x=1\u20133) radical densities with and without plasmas were measured by infrared diode laser absorption spectroscopy. In the ECR plasma employing the novel gas source, CF_x (x =1\u20133) radical densities were estimated to be of the order of 10^12\u201310^13 cm^-3. The gas source has been applied to the selective etching of SiO_2 to Si using the ECR plasma. As a result, the etching characteristics by ECR plasma employing the novel gas source were equivalent to those by a conventional ECR plasma employing C_4F_8 gas. Therefore, this novel gas source is applicable to etching processes for preventing global warming.", "subitem_description_type": "Abstract"}]}, "item_10_identifier_60": {"attribute_name": "URI", "attribute_value_mlt": [{"subitem_identifier_type": "HDL", "subitem_identifier_uri": "http://hdl.handle.net/2237/7076"}]}, "item_10_publisher_32": {"attribute_name": "\u51fa\u7248\u8005", "attribute_value_mlt": [{"subitem_publisher": "American Institute of Physics"}]}, "item_10_relation_11": {"attribute_name": "DOI", "attribute_value_mlt": [{"subitem_relation_type_id": {"subitem_relation_type_id_text": "http://dx.doi.org/10.1116/1.590676", "subitem_relation_type_select": "DOI"}}]}, "item_10_rights_12": {"attribute_name": "\u6a29\u5229", "attribute_value_mlt": [{"subitem_rights": "Copyright (1999) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics."}]}, "item_10_select_15": {"attribute_name": "\u8457\u8005\u7248\u30d5\u30e9\u30b0", "attribute_value_mlt": [{"subitem_select_item": "publisher"}]}, "item_10_source_id_7": {"attribute_name": "ISSN", "attribute_value_mlt": [{"subitem_source_identifier": "1071-1023", "subitem_source_identifier_type": "ISSN"}]}, "item_10_text_14": {"attribute_name": "\u30d5\u30a9\u30fc\u30de\u30c3\u30c8", "attribute_value_mlt": [{"subitem_text_value": "application/pdf"}]}, "item_creator": {"attribute_name": "\u8457\u8005", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "Fujita, Kazushi"}], "nameIdentifiers": [{"nameIdentifier": "14111", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Ito, Masafumi"}], "nameIdentifiers": [{"nameIdentifier": "14112", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Hori, Masaru"}], "nameIdentifiers": [{"nameIdentifier": "14113", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Goto, Toshio"}], "nameIdentifiers": [{"nameIdentifier": "14114", "nameIdentifierScheme": "WEKO"}]}]}, "item_files": {"attribute_name": "\u30d5\u30a1\u30a4\u30eb\u60c5\u5831", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2018-02-19"}], "displaytype": "detail", "download_preview_message": "", "file_order": 0, "filename": "JVB000957.pdf", "filesize": [{"value": "199.2 kB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "licensetype": "license_free", "mimetype": "application/pdf", "size": 199200.0, "url": {"label": "JVB000957.pdf", "url": "https://nagoya.repo.nii.ac.jp/record/5472/files/JVB000957.pdf"}, "version_id": "7e4958b9-e106-43ea-9758-f2118094c348"}]}, "item_language": {"attribute_name": "\u8a00\u8a9e", "attribute_value_mlt": [{"subitem_language": "eng"}]}, "item_resource_type": {"attribute_name": "\u8cc7\u6e90\u30bf\u30a4\u30d7", "attribute_value_mlt": [{"resourcetype": "journal article", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "Novel process for SiO_2/Si selective etching using a novel gas source for preventing global warming", "item_titles": {"attribute_name": "\u30bf\u30a4\u30c8\u30eb", "attribute_value_mlt": [{"subitem_title": "Novel process for SiO_2/Si selective etching using a novel gas source for preventing global warming"}]}, "item_type_id": "10", "owner": "1", "path": ["320/321/322"], "permalink_uri": "http://hdl.handle.net/2237/7076", "pubdate": {"attribute_name": "\u516c\u958b\u65e5", "attribute_name_i18n": "\u516c\u958b\u65e5", "attribute_value": "2006-10-26"}, "publish_date": "2006-10-26", "publish_status": "0", "recid": "5472", "relation": {}, "relation_version_is_last": true, "title": ["Novel process for SiO_2/Si selective etching using a novel gas source for preventing global warming"], "weko_shared_id": 3}