{"_buckets": {"deposit": "6eff97df-0c5d-4547-bb18-50077445ce4e"}, "_deposit": {"id": "5472", "owners": [], "pid": {"revision_id": 0, "type": "depid", "value": "5472"}, "status": "published"}, "_oai": {"id": "oai:nagoya.repo.nii.ac.jp:00005472", "sets": ["322"]}, "author_link": ["14111", "14112", "14113", "14114"], "item_10_biblio_info_6": {"attribute_name": "書誌情報", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "1999-05", "bibliographicIssueDateType": "Issued"}, "bibliographicIssueNumber": "3", "bibliographicPageEnd": "960", "bibliographicPageStart": "957", "bibliographicVolumeNumber": "17", "bibliographic_titles": [{"bibliographic_title": "Journal of Vacuum Science \u0026 Technology B", "bibliographic_titleLang": "en"}]}]}, "item_10_description_4": {"attribute_name": "抄録", "attribute_value_mlt": [{"subitem_description": "A novel gas source replacing fluorocarbon feed gases has been developed for preventing global warming. The novel gas source was designed to generate fluorocarbon species from polytetrafluoroethylene by CO_2 laser ablation. The species generated from the gas source were introduced into an electron cyclotron resonance (ECR) plasma employing Ar gases. To characterize the gas source, CF_x (x=1–3) radical densities with and without plasmas were measured by infrared diode laser absorption spectroscopy. In the ECR plasma employing the novel gas source, CF_x (x =1–3) radical densities were estimated to be of the order of 10^12–10^13 cm^-3. The gas source has been applied to the selective etching of SiO_2 to Si using the ECR plasma. As a result, the etching characteristics by ECR plasma employing the novel gas source were equivalent to those by a conventional ECR plasma employing C_4F_8 gas. Therefore, this novel gas source is applicable to etching processes for preventing global warming.", "subitem_description_language": "en", "subitem_description_type": "Abstract"}]}, "item_10_identifier_60": {"attribute_name": "URI", "attribute_value_mlt": [{"subitem_identifier_type": "HDL", "subitem_identifier_uri": "http://hdl.handle.net/2237/7076"}]}, "item_10_publisher_32": {"attribute_name": "出版者", "attribute_value_mlt": [{"subitem_publisher": "American Institute of Physics", "subitem_publisher_language": "en"}]}, "item_10_relation_11": {"attribute_name": "DOI", "attribute_value_mlt": [{"subitem_relation_type": "isVersionOf", "subitem_relation_type_id": {"subitem_relation_type_id_text": "https://doi.org/10.1116/1.590676", "subitem_relation_type_select": "DOI"}}]}, "item_10_rights_12": {"attribute_name": "権利", "attribute_value_mlt": [{"subitem_rights": "Copyright (1999) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.", "subitem_rights_language": "en"}]}, "item_10_select_15": {"attribute_name": "著者版フラグ", "attribute_value_mlt": [{"subitem_select_item": "publisher"}]}, "item_10_source_id_7": {"attribute_name": "ISSN", "attribute_value_mlt": [{"subitem_source_identifier": "1071-1023", "subitem_source_identifier_type": "PISSN"}]}, "item_10_text_14": {"attribute_name": "フォーマット", "attribute_value_mlt": [{"subitem_text_value": "application/pdf"}]}, "item_1615787544753": {"attribute_name": "出版タイプ", "attribute_value_mlt": [{"subitem_version_resource": "http://purl.org/coar/version/c_970fb48d4fbd8a85", "subitem_version_type": "VoR"}]}, "item_access_right": {"attribute_name": "アクセス権", "attribute_value_mlt": [{"subitem_access_right": "open access", "subitem_access_right_uri": "http://purl.org/coar/access_right/c_abf2"}]}, "item_creator": {"attribute_name": "著者", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "Fujita, Kazushi", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "14111", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Ito, Masafumi", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "14112", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Hori, Masaru", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "14113", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Goto, Toshio", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "14114", "nameIdentifierScheme": "WEKO"}]}]}, "item_files": {"attribute_name": "ファイル情報", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2018-02-19"}], "displaytype": "detail", "download_preview_message": "", "file_order": 0, "filename": "JVB000957.pdf", "filesize": [{"value": "199.2 kB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "licensetype": "license_note", "mimetype": "application/pdf", "size": 199200.0, "url": {"label": "JVB000957.pdf", "objectType": "fulltext", "url": "https://nagoya.repo.nii.ac.jp/record/5472/files/JVB000957.pdf"}, "version_id": "7e4958b9-e106-43ea-9758-f2118094c348"}]}, "item_language": {"attribute_name": "言語", "attribute_value_mlt": [{"subitem_language": "eng"}]}, "item_resource_type": {"attribute_name": "資源タイプ", "attribute_value_mlt": [{"resourcetype": "journal article", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "Novel process for SiO_2/Si selective etching using a novel gas source for preventing global warming", "item_titles": {"attribute_name": "タイトル", "attribute_value_mlt": [{"subitem_title": "Novel process for SiO_2/Si selective etching using a novel gas source for preventing global warming", "subitem_title_language": "en"}]}, "item_type_id": "10", "owner": "1", "path": ["322"], "permalink_uri": "http://hdl.handle.net/2237/7076", "pubdate": {"attribute_name": "PubDate", "attribute_value": "2006-10-26"}, "publish_date": "2006-10-26", "publish_status": "0", "recid": "5472", "relation": {}, "relation_version_is_last": true, "title": ["Novel process for SiO_2/Si selective etching using a novel gas source for preventing global warming"], "weko_shared_id": -1}