ログイン
言語:

WEKO3

  • トップ
  • ランキング
To
lat lon distance
To

Field does not validate



インデックスリンク

インデックスツリー

メールアドレスを入力してください。

WEKO

One fine body…

WEKO

One fine body…

アイテム

{"_buckets": {"deposit": "6160af60-e29d-45cb-8eeb-0c122c2d08d8"}, "_deposit": {"id": "5491", "owners": [], "pid": {"revision_id": 0, "type": "depid", "value": "5491"}, "status": "published"}, "_oai": {"id": "oai:nagoya.repo.nii.ac.jp:00005491", "sets": ["322"]}, "author_link": ["14166", "14167", "14168", "14169"], "item_10_biblio_info_6": {"attribute_name": "書誌情報", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2002-11", "bibliographicIssueDateType": "Issued"}, "bibliographicIssueNumber": "6", "bibliographicPageEnd": "2198", "bibliographicPageStart": "2192", "bibliographicVolumeNumber": "20", "bibliographic_titles": [{"bibliographic_title": "Journal of Vacuum Science \u0026 Technology B", "bibliographic_titleLang": "en"}]}]}, "item_10_description_4": {"attribute_name": "抄録", "attribute_value_mlt": [{"subitem_description": "An environmentally benign etching process using a solid material evaporation technique has been investigated for preventing global warming. In this process, a polytetrafluoroethylene is evaporated by a CO_2 laser, resulting in production of fluorocarbon species working as the etching species. Therefore, this system employs no perfluorocompound feed gases, which cause global warming, and enables us to design a new plasma chemistry using the solid material. The system was successfully applied to a SiO_2 contact hole etching process employing a planar electron cyclotron resonance plasma. The etched profile was successfully controlled by varying the Ar dilution ratio and the process pressure. In a 0.6 μm contact hole and a 0.08 μm trench fabrication process, this novel process enables us to realize high etching performances, where the etching rate of SiO_2 , selectivities of SiO_2/resist, and SiO_2 /Si were 340 μm/min, 6.8 and 31, respectively, in optimal condition. To clarify the plasma chemistry using solid material evaporation, CF_x (x=1 – 3) radical densities and F atom density were measured by infrared diode laser absorption spectroscopy and actinometric optical emission spectroscopy, and fluorocarbon films deposited on SiO_2 were analyzed by x-ray photoelectron spectroscopy. On the basis of these results, the etching mechanism was discussed.", "subitem_description_language": "en", "subitem_description_type": "Abstract"}]}, "item_10_identifier_60": {"attribute_name": "URI", "attribute_value_mlt": [{"subitem_identifier_type": "HDL", "subitem_identifier_uri": "http://hdl.handle.net/2237/7097"}]}, "item_10_publisher_32": {"attribute_name": "出版者", "attribute_value_mlt": [{"subitem_publisher": "American Institute of Physics", "subitem_publisher_language": "en"}]}, "item_10_relation_11": {"attribute_name": "DOI", "attribute_value_mlt": [{"subitem_relation_type": "isVersionOf", "subitem_relation_type_id": {"subitem_relation_type_id_text": "https://doi.org/10.1116/1.1513632", "subitem_relation_type_select": "DOI"}}]}, "item_10_rights_12": {"attribute_name": "権利", "attribute_value_mlt": [{"subitem_rights": "Copyright (2002) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.", "subitem_rights_language": "en"}]}, "item_10_select_15": {"attribute_name": "著者版フラグ", "attribute_value_mlt": [{"subitem_select_item": "publisher"}]}, "item_10_source_id_7": {"attribute_name": "ISSN", "attribute_value_mlt": [{"subitem_source_identifier": "1071-1023", "subitem_source_identifier_type": "PISSN"}]}, "item_10_text_14": {"attribute_name": "フォーマット", "attribute_value_mlt": [{"subitem_text_value": "application/pdf"}]}, "item_1615787544753": {"attribute_name": "出版タイプ", "attribute_value_mlt": [{"subitem_version_resource": "http://purl.org/coar/version/c_970fb48d4fbd8a85", "subitem_version_type": "VoR"}]}, "item_access_right": {"attribute_name": "アクセス権", "attribute_value_mlt": [{"subitem_access_right": "open access", "subitem_access_right_uri": "http://purl.org/coar/access_right/c_abf2"}]}, "item_creator": {"attribute_name": "著者", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "Fujita, Kazushi", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "14166", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Hori, Masaru", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "14167", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Goto, Toshio", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "14168", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Ito, Masafumi", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "14169", "nameIdentifierScheme": "WEKO"}]}]}, "item_files": {"attribute_name": "ファイル情報", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2018-02-19"}], "displaytype": "detail", "download_preview_message": "", "file_order": 0, "filename": "JVB002192.pdf", "filesize": [{"value": "458.2 kB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "licensetype": "license_note", "mimetype": "application/pdf", "size": 458200.0, "url": {"label": "JVB002192.pdf", "objectType": "fulltext", "url": "https://nagoya.repo.nii.ac.jp/record/5491/files/JVB002192.pdf"}, "version_id": "ecafc6d6-4f84-4be7-bbdf-bb9a38afb4e4"}]}, "item_language": {"attribute_name": "言語", "attribute_value_mlt": [{"subitem_language": "eng"}]}, "item_resource_type": {"attribute_name": "資源タイプ", "attribute_value_mlt": [{"resourcetype": "journal article", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "Silicon oxide contact hole etching employing an environmentally benign process", "item_titles": {"attribute_name": "タイトル", "attribute_value_mlt": [{"subitem_title": "Silicon oxide contact hole etching employing an environmentally benign process", "subitem_title_language": "en"}]}, "item_type_id": "10", "owner": "1", "path": ["322"], "permalink_uri": "http://hdl.handle.net/2237/7097", "pubdate": {"attribute_name": "PubDate", "attribute_value": "2006-10-30"}, "publish_date": "2006-10-30", "publish_status": "0", "recid": "5491", "relation": {}, "relation_version_is_last": true, "title": ["Silicon oxide contact hole etching employing an environmentally benign process"], "weko_shared_id": -1}
  1. B200 工学部/工学研究科
  2. B200a 雑誌掲載論文
  3. 学術雑誌

Silicon oxide contact hole etching employing an environmentally benign process

http://hdl.handle.net/2237/7097
http://hdl.handle.net/2237/7097
dabf698b-a527-431d-859b-981c60e11b44
名前 / ファイル ライセンス アクション
JVB002192.pdf JVB002192.pdf (458.2 kB)
Item type 学術雑誌論文 / Journal Article(1)
公開日 2006-10-30
タイトル
タイトル Silicon oxide contact hole etching employing an environmentally benign process
言語 en
著者 Fujita, Kazushi

× Fujita, Kazushi

WEKO 14166

en Fujita, Kazushi

Search repository
Hori, Masaru

× Hori, Masaru

WEKO 14167

en Hori, Masaru

Search repository
Goto, Toshio

× Goto, Toshio

WEKO 14168

en Goto, Toshio

Search repository
Ito, Masafumi

× Ito, Masafumi

WEKO 14169

en Ito, Masafumi

Search repository
アクセス権
アクセス権 open access
アクセス権URI http://purl.org/coar/access_right/c_abf2
権利
言語 en
権利情報 Copyright (2002) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
抄録
内容記述 An environmentally benign etching process using a solid material evaporation technique has been investigated for preventing global warming. In this process, a polytetrafluoroethylene is evaporated by a CO_2 laser, resulting in production of fluorocarbon species working as the etching species. Therefore, this system employs no perfluorocompound feed gases, which cause global warming, and enables us to design a new plasma chemistry using the solid material. The system was successfully applied to a SiO_2 contact hole etching process employing a planar electron cyclotron resonance plasma. The etched profile was successfully controlled by varying the Ar dilution ratio and the process pressure. In a 0.6 μm contact hole and a 0.08 μm trench fabrication process, this novel process enables us to realize high etching performances, where the etching rate of SiO_2 , selectivities of SiO_2/resist, and SiO_2 /Si were 340 μm/min, 6.8 and 31, respectively, in optimal condition. To clarify the plasma chemistry using solid material evaporation, CF_x (x=1 – 3) radical densities and F atom density were measured by infrared diode laser absorption spectroscopy and actinometric optical emission spectroscopy, and fluorocarbon films deposited on SiO_2 were analyzed by x-ray photoelectron spectroscopy. On the basis of these results, the etching mechanism was discussed.
言語 en
内容記述タイプ Abstract
出版者
言語 en
出版者 American Institute of Physics
言語
言語 eng
資源タイプ
資源タイプresource http://purl.org/coar/resource_type/c_6501
タイプ journal article
出版タイプ
出版タイプ VoR
出版タイプResource http://purl.org/coar/version/c_970fb48d4fbd8a85
DOI
関連タイプ isVersionOf
識別子タイプ DOI
関連識別子 https://doi.org/10.1116/1.1513632
ISSN
収録物識別子タイプ PISSN
収録物識別子 1071-1023
書誌情報 en : Journal of Vacuum Science & Technology B

巻 20, 号 6, p. 2192-2198, 発行日 2002-11
フォーマット
application/pdf
著者版フラグ
値 publisher
URI
識別子 http://hdl.handle.net/2237/7097
識別子タイプ HDL
戻る
0
views
See details
Views

Versions

Ver.1 2021-03-01 13:09:58.678487
Show All versions

Share

Mendeley Twitter Facebook Print Addthis

Cite as

エクスポート

OAI-PMH
  • OAI-PMH JPCOAR
  • OAI-PMH DublinCore
  • OAI-PMH DDI
Other Formats
  • JSON
  • BIBTEX

Confirm


Powered by WEKO3


Powered by WEKO3