{"_buckets": {"deposit": "6160af60-e29d-45cb-8eeb-0c122c2d08d8"}, "_deposit": {"id": "5491", "owners": [], "pid": {"revision_id": 0, "type": "depid", "value": "5491"}, "status": "published"}, "_oai": {"id": "oai:nagoya.repo.nii.ac.jp:00005491", "sets": ["322"]}, "author_link": ["14166", "14167", "14168", "14169"], "item_10_biblio_info_6": {"attribute_name": "書誌情報", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2002-11", "bibliographicIssueDateType": "Issued"}, "bibliographicIssueNumber": "6", "bibliographicPageEnd": "2198", "bibliographicPageStart": "2192", "bibliographicVolumeNumber": "20", "bibliographic_titles": [{"bibliographic_title": "Journal of Vacuum Science \u0026 Technology B", "bibliographic_titleLang": "en"}]}]}, "item_10_description_4": {"attribute_name": "抄録", "attribute_value_mlt": [{"subitem_description": "An environmentally benign etching process using a solid material evaporation technique has been investigated for preventing global warming. In this process, a polytetrafluoroethylene is evaporated by a CO_2 laser, resulting in production of fluorocarbon species working as the etching species. Therefore, this system employs no perfluorocompound feed gases, which cause global warming, and enables us to design a new plasma chemistry using the solid material. The system was successfully applied to a SiO_2 contact hole etching process employing a planar electron cyclotron resonance plasma. The etched profile was successfully controlled by varying the Ar dilution ratio and the process pressure. In a 0.6 μm contact hole and a 0.08 μm trench fabrication process, this novel process enables us to realize high etching performances, where the etching rate of SiO_2 , selectivities of SiO_2/resist, and SiO_2 /Si were 340 μm/min, 6.8 and 31, respectively, in optimal condition. To clarify the plasma chemistry using solid material evaporation, CF_x (x=1 – 3) radical densities and F atom density were measured by infrared diode laser absorption spectroscopy and actinometric optical emission spectroscopy, and fluorocarbon films deposited on SiO_2 were analyzed by x-ray photoelectron spectroscopy. On the basis of these results, the etching mechanism was discussed.", "subitem_description_language": "en", "subitem_description_type": "Abstract"}]}, "item_10_identifier_60": {"attribute_name": "URI", "attribute_value_mlt": [{"subitem_identifier_type": "HDL", "subitem_identifier_uri": "http://hdl.handle.net/2237/7097"}]}, "item_10_publisher_32": {"attribute_name": "出版者", "attribute_value_mlt": [{"subitem_publisher": "American Institute of Physics", "subitem_publisher_language": "en"}]}, "item_10_relation_11": {"attribute_name": "DOI", "attribute_value_mlt": [{"subitem_relation_type": "isVersionOf", "subitem_relation_type_id": {"subitem_relation_type_id_text": "https://doi.org/10.1116/1.1513632", "subitem_relation_type_select": "DOI"}}]}, "item_10_rights_12": {"attribute_name": "権利", "attribute_value_mlt": [{"subitem_rights": "Copyright (2002) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.", "subitem_rights_language": "en"}]}, "item_10_select_15": {"attribute_name": "著者版フラグ", "attribute_value_mlt": [{"subitem_select_item": "publisher"}]}, "item_10_source_id_7": {"attribute_name": "ISSN", "attribute_value_mlt": [{"subitem_source_identifier": "1071-1023", "subitem_source_identifier_type": "PISSN"}]}, "item_10_text_14": {"attribute_name": "フォーマット", "attribute_value_mlt": [{"subitem_text_value": "application/pdf"}]}, "item_1615787544753": {"attribute_name": "出版タイプ", "attribute_value_mlt": [{"subitem_version_resource": "http://purl.org/coar/version/c_970fb48d4fbd8a85", "subitem_version_type": "VoR"}]}, "item_access_right": {"attribute_name": "アクセス権", "attribute_value_mlt": [{"subitem_access_right": "open access", "subitem_access_right_uri": "http://purl.org/coar/access_right/c_abf2"}]}, "item_creator": {"attribute_name": "著者", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "Fujita, Kazushi", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "14166", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Hori, Masaru", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "14167", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Goto, Toshio", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "14168", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Ito, Masafumi", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "14169", "nameIdentifierScheme": "WEKO"}]}]}, "item_files": {"attribute_name": "ファイル情報", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2018-02-19"}], "displaytype": "detail", "download_preview_message": "", "file_order": 0, "filename": "JVB002192.pdf", "filesize": [{"value": "458.2 kB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "licensetype": "license_note", "mimetype": "application/pdf", "size": 458200.0, "url": {"label": "JVB002192.pdf", "objectType": "fulltext", "url": "https://nagoya.repo.nii.ac.jp/record/5491/files/JVB002192.pdf"}, "version_id": "ecafc6d6-4f84-4be7-bbdf-bb9a38afb4e4"}]}, "item_language": {"attribute_name": "言語", "attribute_value_mlt": [{"subitem_language": "eng"}]}, "item_resource_type": {"attribute_name": "資源タイプ", "attribute_value_mlt": [{"resourcetype": "journal article", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "Silicon oxide contact hole etching employing an environmentally benign process", "item_titles": {"attribute_name": "タイトル", "attribute_value_mlt": [{"subitem_title": "Silicon oxide contact hole etching employing an environmentally benign process", "subitem_title_language": "en"}]}, "item_type_id": "10", "owner": "1", "path": ["322"], "permalink_uri": "http://hdl.handle.net/2237/7097", "pubdate": {"attribute_name": "PubDate", "attribute_value": "2006-10-30"}, "publish_date": "2006-10-30", "publish_status": "0", "recid": "5491", "relation": {}, "relation_version_is_last": true, "title": ["Silicon oxide contact hole etching employing an environmentally benign process"], "weko_shared_id": -1}