WEKO3
アイテム
Silicon oxide contact hole etching employing an environmentally benign process
http://hdl.handle.net/2237/7097
http://hdl.handle.net/2237/7097dabf698b-a527-431d-859b-981c60e11b44
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
JVB002192.pdf (458.2 kB)
|
|
| Item type | 学術雑誌論文 / Journal Article(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2006-10-30 | |||||
| タイトル | ||||||
| タイトル | Silicon oxide contact hole etching employing an environmentally benign process | |||||
| 言語 | en | |||||
| 著者 |
Fujita, Kazushi
× Fujita, Kazushi× Hori, Masaru× Goto, Toshio× Ito, Masafumi |
|||||
| アクセス権 | ||||||
| アクセス権 | open access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_abf2 | |||||
| 権利 | ||||||
| 言語 | en | |||||
| 権利情報 | Copyright (2002) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. | |||||
| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | An environmentally benign etching process using a solid material evaporation technique has been investigated for preventing global warming. In this process, a polytetrafluoroethylene is evaporated by a CO_2 laser, resulting in production of fluorocarbon species working as the etching species. Therefore, this system employs no perfluorocompound feed gases, which cause global warming, and enables us to design a new plasma chemistry using the solid material. The system was successfully applied to a SiO_2 contact hole etching process employing a planar electron cyclotron resonance plasma. The etched profile was successfully controlled by varying the Ar dilution ratio and the process pressure. In a 0.6 μm contact hole and a 0.08 μm trench fabrication process, this novel process enables us to realize high etching performances, where the etching rate of SiO_2 , selectivities of SiO_2/resist, and SiO_2 /Si were 340 μm/min, 6.8 and 31, respectively, in optimal condition. To clarify the plasma chemistry using solid material evaporation, CF_x (x=1 – 3) radical densities and F atom density were measured by infrared diode laser absorption spectroscopy and actinometric optical emission spectroscopy, and fluorocarbon films deposited on SiO_2 were analyzed by x-ray photoelectron spectroscopy. On the basis of these results, the etching mechanism was discussed. | |||||
| 言語 | en | |||||
| 出版者 | ||||||
| 出版者 | American Institute of Physics | |||||
| 言語 | en | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプresource | http://purl.org/coar/resource_type/c_6501 | |||||
| タイプ | journal article | |||||
| 出版タイプ | ||||||
| 出版タイプ | VoR | |||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
| DOI | ||||||
| 関連タイプ | isVersionOf | |||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | https://doi.org/10.1116/1.1513632 | |||||
| ISSN | ||||||
| 収録物識別子タイプ | PISSN | |||||
| 収録物識別子 | 1071-1023 | |||||
| 書誌情報 |
en : Journal of Vacuum Science & Technology B 巻 20, 号 6, p. 2192-2198, 発行日 2002-11 |
|||||
| フォーマット | ||||||
| 値 | application/pdf | |||||
| 著者版フラグ | ||||||
| 値 | publisher | |||||
| URI | ||||||
| 識別子 | http://hdl.handle.net/2237/7097 | |||||
| 識別子タイプ | HDL | |||||
