{"_buckets": {"deposit": "6160af60-e29d-45cb-8eeb-0c122c2d08d8"}, "_deposit": {"id": "5491", "owners": [], "pid": {"revision_id": 0, "type": "depid", "value": "5491"}, "status": "published"}, "_oai": {"id": "oai:nagoya.repo.nii.ac.jp:00005491"}, "item_10_biblio_info_6": {"attribute_name": "\u66f8\u8a8c\u60c5\u5831", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2002-11", "bibliographicIssueDateType": "Issued"}, "bibliographicIssueNumber": "6", "bibliographicPageEnd": "2198", "bibliographicPageStart": "2192", "bibliographicVolumeNumber": "20", "bibliographic_titles": [{"bibliographic_title": "Journal of Vacuum Science \u0026 Technology B"}]}]}, "item_10_description_4": {"attribute_name": "\u6284\u9332", "attribute_value_mlt": [{"subitem_description": "An environmentally benign etching process using a solid material evaporation technique has been investigated for preventing global warming. In this process, a polytetrafluoroethylene is evaporated by a CO_2 laser, resulting in production of fluorocarbon species working as the etching species. Therefore, this system employs no perfluorocompound feed gases, which cause global warming, and enables us to design a new plasma chemistry using the solid material. The system was successfully applied to a SiO_2 contact hole etching process employing a planar electron cyclotron resonance plasma. The etched profile was successfully controlled by varying the Ar dilution ratio and the process pressure. In a 0.6 \u03bcm contact hole and a 0.08 \u03bcm trench fabrication process, this novel process enables us to realize high etching performances, where the etching rate of SiO_2 , selectivities of SiO_2/resist, and SiO_2 /Si were 340 \u03bcm/min, 6.8 and 31, respectively, in optimal condition. To clarify the plasma chemistry using solid material evaporation, CF_x (x=1 \u2013 3) radical densities and F atom density were measured by infrared diode laser absorption spectroscopy and actinometric optical emission spectroscopy, and fluorocarbon films deposited on SiO_2 were analyzed by x-ray photoelectron spectroscopy. On the basis of these results, the etching mechanism was discussed.", "subitem_description_type": "Abstract"}]}, "item_10_identifier_60": {"attribute_name": "URI", "attribute_value_mlt": [{"subitem_identifier_type": "HDL", "subitem_identifier_uri": "http://hdl.handle.net/2237/7097"}]}, "item_10_publisher_32": {"attribute_name": "\u51fa\u7248\u8005", "attribute_value_mlt": [{"subitem_publisher": "American Institute of Physics"}]}, "item_10_relation_11": {"attribute_name": "DOI", "attribute_value_mlt": [{"subitem_relation_type_id": {"subitem_relation_type_id_text": "http://dx.doi.org/10.1116/1.1513632", "subitem_relation_type_select": "DOI"}}]}, "item_10_rights_12": {"attribute_name": "\u6a29\u5229", "attribute_value_mlt": [{"subitem_rights": "Copyright (2002) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics."}]}, "item_10_select_15": {"attribute_name": "\u8457\u8005\u7248\u30d5\u30e9\u30b0", "attribute_value_mlt": [{"subitem_select_item": "publisher"}]}, "item_10_source_id_7": {"attribute_name": "ISSN", "attribute_value_mlt": [{"subitem_source_identifier": "1071-1023", "subitem_source_identifier_type": "ISSN"}]}, "item_10_text_14": {"attribute_name": "\u30d5\u30a9\u30fc\u30de\u30c3\u30c8", "attribute_value_mlt": [{"subitem_text_value": "application/pdf"}]}, "item_creator": {"attribute_name": "\u8457\u8005", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "Fujita, Kazushi"}], "nameIdentifiers": [{"nameIdentifier": "14166", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Hori, Masaru"}], "nameIdentifiers": [{"nameIdentifier": "14167", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Goto, Toshio"}], "nameIdentifiers": [{"nameIdentifier": "14168", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Ito, Masafumi"}], "nameIdentifiers": [{"nameIdentifier": "14169", "nameIdentifierScheme": "WEKO"}]}]}, "item_files": {"attribute_name": "\u30d5\u30a1\u30a4\u30eb\u60c5\u5831", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2018-02-19"}], "displaytype": "detail", "download_preview_message": "", "file_order": 0, "filename": "JVB002192.pdf", "filesize": [{"value": "458.2 kB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "licensetype": "license_free", "mimetype": "application/pdf", "size": 458200.0, "url": {"label": "JVB002192.pdf", "url": "https://nagoya.repo.nii.ac.jp/record/5491/files/JVB002192.pdf"}, "version_id": "ecafc6d6-4f84-4be7-bbdf-bb9a38afb4e4"}]}, "item_language": {"attribute_name": "\u8a00\u8a9e", "attribute_value_mlt": [{"subitem_language": "eng"}]}, "item_resource_type": {"attribute_name": "\u8cc7\u6e90\u30bf\u30a4\u30d7", "attribute_value_mlt": [{"resourcetype": "journal article", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "Silicon oxide contact hole etching employing an environmentally benign process", "item_titles": {"attribute_name": "\u30bf\u30a4\u30c8\u30eb", "attribute_value_mlt": [{"subitem_title": "Silicon oxide contact hole etching employing an environmentally benign process"}]}, "item_type_id": "10", "owner": "1", "path": ["320/321/322"], "permalink_uri": "http://hdl.handle.net/2237/7097", "pubdate": {"attribute_name": "\u516c\u958b\u65e5", "attribute_value": "2006-10-30"}, "publish_date": "2006-10-30", "publish_status": "0", "recid": "5491", "relation": {}, "relation_version_is_last": true, "title": ["Silicon oxide contact hole etching employing an environmentally benign process"], "weko_shared_id": 3}