{"_buckets": {"deposit": "5c693a68-1513-4824-9e24-fcd6e37c679b"}, "_deposit": {"id": "5494", "owners": [], "pid": {"revision_id": 0, "type": "depid", "value": "5494"}, "status": "published"}, "_oai": {"id": "oai:nagoya.repo.nii.ac.jp:00005494"}, "item_10_biblio_info_6": {"attribute_name": "\u66f8\u8a8c\u60c5\u5831", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2001-05-01", "bibliographicIssueDateType": "Issued"}, "bibliographicIssueNumber": "9", "bibliographicPageEnd": "5087", "bibliographicPageStart": "5083", "bibliographicVolumeNumber": "89", "bibliographic_titles": [{"bibliographic_title": "Journal of Applied Physics"}]}]}, "item_10_description_4": {"attribute_name": "\u6284\u9332", "attribute_value_mlt": [{"subitem_description": "We have clarified effects of ions and radicals on the film property of ultrathin silicon nitride (SiN_x) films of 5 nm in thickness formed on Si substrates at 300 \u2103 in electron cyclotron resonance plasma-enhanced chemical vapor deposition (PECVD) employing ammonia and silane (NH_3/SiH_4), and nitrogen and silane (N_2/SiH_4) gases. In situ Fourier transform infrared reflection absorption spectroscopy and in situ x-ray photoelectron spectroscopy confirmed that in N_2/SiH_4 plasma, Si-N bonds in the film were increased by eliminating charged species, and thus, radicals promoted the formation of the SiN_x film of high Si-N bond density. On the other hand, Si-N bonds in the film were decreased by eliminating charged species, and eventually, ions played an important role in forming the film of high Si-N bond density in NH_3/SiH_4 plasma. The excellent hysteresis of 0.04 V was successfully achieved with the NH_3/SiH_4 plasma. Furthermore, the quadrupole mass spectroscopy suggests that {NH_4}^+ charged species make a significant contribution to the formation of ultrathin SiN_x films with high quality. These results provide insights into important species to be controlled in the PECVD for low temperature formation of the SiN_x gate dielectric films in ultralarge scale integrated circuits.", "subitem_description_type": "Abstract"}]}, "item_10_identifier_60": {"attribute_name": "URI", "attribute_value_mlt": [{"subitem_identifier_type": "HDL", "subitem_identifier_uri": "http://hdl.handle.net/2237/7099"}]}, "item_10_publisher_32": {"attribute_name": "\u51fa\u7248\u8005", "attribute_value_mlt": [{"subitem_publisher": "American Institute of Physics"}]}, "item_10_relation_11": {"attribute_name": "DOI", "attribute_value_mlt": [{"subitem_relation_type_id": {"subitem_relation_type_id_text": "http://dx.doi.org/10.1063/1.1337939", "subitem_relation_type_select": "DOI"}}]}, "item_10_rights_12": {"attribute_name": "\u6a29\u5229", "attribute_value_mlt": [{"subitem_rights": "Copyright (2001) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics."}]}, "item_10_select_15": {"attribute_name": "\u8457\u8005\u7248\u30d5\u30e9\u30b0", "attribute_value_mlt": [{"subitem_select_item": "publisher"}]}, "item_10_source_id_7": {"attribute_name": "ISSN", "attribute_value_mlt": [{"subitem_source_identifier": "0021-8979", "subitem_source_identifier_type": "ISSN"}]}, "item_10_text_14": {"attribute_name": "\u30d5\u30a9\u30fc\u30de\u30c3\u30c8", "attribute_value_mlt": [{"subitem_text_value": "application/pdf"}]}, "item_creator": {"attribute_name": "\u8457\u8005", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "Ohta, Hiroyuki"}], "nameIdentifiers": [{"nameIdentifier": "14179", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Nagashima, Atsushi"}], "nameIdentifiers": [{"nameIdentifier": "14180", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Hori, Masaru"}], "nameIdentifiers": [{"nameIdentifier": "14181", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Goto, Toshio"}], "nameIdentifiers": [{"nameIdentifier": "14182", "nameIdentifierScheme": "WEKO"}]}]}, "item_files": {"attribute_name": "\u30d5\u30a1\u30a4\u30eb\u60c5\u5831", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2018-02-19"}], "displaytype": "detail", "download_preview_message": "", "file_order": 0, "filename": "JApplPhys_89_5083.pdf", "filesize": [{"value": "419.0 kB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "licensetype": "license_free", "mimetype": "application/pdf", "size": 419000.0, "url": {"label": "JApplPhys_89_5083.pdf", "url": "https://nagoya.repo.nii.ac.jp/record/5494/files/JApplPhys_89_5083.pdf"}, "version_id": "6c28d01e-bc69-482d-8b51-6f4fe83db3d1"}]}, "item_language": {"attribute_name": "\u8a00\u8a9e", "attribute_value_mlt": [{"subitem_language": "eng"}]}, "item_resource_type": {"attribute_name": "\u8cc7\u6e90\u30bf\u30a4\u30d7", "attribute_value_mlt": [{"resourcetype": "journal article", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "Effect of ions and radicals on formation of silicon nitride gate dielectric films using plasma chemical vapor deposition", "item_titles": {"attribute_name": "\u30bf\u30a4\u30c8\u30eb", "attribute_value_mlt": [{"subitem_title": "Effect of ions and radicals on formation of silicon nitride gate dielectric films using plasma chemical vapor deposition"}]}, "item_type_id": "10", "owner": "1", "path": ["320/321/322"], "permalink_uri": "http://hdl.handle.net/2237/7099", "pubdate": {"attribute_name": "\u516c\u958b\u65e5", "attribute_name_i18n": "\u516c\u958b\u65e5", "attribute_value": "2006-10-30"}, "publish_date": "2006-10-30", "publish_status": "0", "recid": "5494", "relation": {}, "relation_version_is_last": true, "title": ["Effect of ions and radicals on formation of silicon nitride gate dielectric films using plasma chemical vapor deposition"], "weko_shared_id": 3}