ログイン
言語:

WEKO3

  • トップ
  • ランキング
To
lat lon distance
To

Field does not validate



インデックスリンク

インデックスツリー

メールアドレスを入力してください。

WEKO

One fine body…

WEKO

One fine body…

アイテム

{"_buckets": {"deposit": "5c693a68-1513-4824-9e24-fcd6e37c679b"}, "_deposit": {"id": "5494", "owners": [], "pid": {"revision_id": 0, "type": "depid", "value": "5494"}, "status": "published"}, "_oai": {"id": "oai:nagoya.repo.nii.ac.jp:00005494", "sets": ["322"]}, "author_link": ["14179", "14180", "14181", "14182"], "item_10_biblio_info_6": {"attribute_name": "書誌情報", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2001-05-01", "bibliographicIssueDateType": "Issued"}, "bibliographicIssueNumber": "9", "bibliographicPageEnd": "5087", "bibliographicPageStart": "5083", "bibliographicVolumeNumber": "89", "bibliographic_titles": [{"bibliographic_title": "Journal of Applied Physics", "bibliographic_titleLang": "en"}]}]}, "item_10_description_4": {"attribute_name": "抄録", "attribute_value_mlt": [{"subitem_description": "We have clarified effects of ions and radicals on the film property of ultrathin silicon nitride (SiN_x) films of 5 nm in thickness formed on Si substrates at 300 ℃ in electron cyclotron resonance plasma-enhanced chemical vapor deposition (PECVD) employing ammonia and silane (NH_3/SiH_4), and nitrogen and silane (N_2/SiH_4) gases. In situ Fourier transform infrared reflection absorption spectroscopy and in situ x-ray photoelectron spectroscopy confirmed that in N_2/SiH_4 plasma, Si-N bonds in the film were increased by eliminating charged species, and thus, radicals promoted the formation of the SiN_x film of high Si-N bond density. On the other hand, Si-N bonds in the film were decreased by eliminating charged species, and eventually, ions played an important role in forming the film of high Si-N bond density in NH_3/SiH_4 plasma. The excellent hysteresis of 0.04 V was successfully achieved with the NH_3/SiH_4 plasma. Furthermore, the quadrupole mass spectroscopy suggests that {NH_4}^+ charged species make a significant contribution to the formation of ultrathin SiN_x films with high quality. These results provide insights into important species to be controlled in the PECVD for low temperature formation of the SiN_x gate dielectric films in ultralarge scale integrated circuits.", "subitem_description_language": "en", "subitem_description_type": "Abstract"}]}, "item_10_identifier_60": {"attribute_name": "URI", "attribute_value_mlt": [{"subitem_identifier_type": "HDL", "subitem_identifier_uri": "http://hdl.handle.net/2237/7099"}]}, "item_10_publisher_32": {"attribute_name": "出版者", "attribute_value_mlt": [{"subitem_publisher": "American Institute of Physics", "subitem_publisher_language": "en"}]}, "item_10_relation_11": {"attribute_name": "DOI", "attribute_value_mlt": [{"subitem_relation_type": "isVersionOf", "subitem_relation_type_id": {"subitem_relation_type_id_text": "https://doi.org/10.1063/1.1337939", "subitem_relation_type_select": "DOI"}}]}, "item_10_rights_12": {"attribute_name": "権利", "attribute_value_mlt": [{"subitem_rights": "Copyright (2001) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.", "subitem_rights_language": "en"}]}, "item_10_select_15": {"attribute_name": "著者版フラグ", "attribute_value_mlt": [{"subitem_select_item": "publisher"}]}, "item_10_source_id_7": {"attribute_name": "ISSN", "attribute_value_mlt": [{"subitem_source_identifier": "0021-8979", "subitem_source_identifier_type": "PISSN"}]}, "item_10_text_14": {"attribute_name": "フォーマット", "attribute_value_mlt": [{"subitem_text_value": "application/pdf"}]}, "item_1615787544753": {"attribute_name": "出版タイプ", "attribute_value_mlt": [{"subitem_version_resource": "http://purl.org/coar/version/c_970fb48d4fbd8a85", "subitem_version_type": "VoR"}]}, "item_access_right": {"attribute_name": "アクセス権", "attribute_value_mlt": [{"subitem_access_right": "open access", "subitem_access_right_uri": "http://purl.org/coar/access_right/c_abf2"}]}, "item_creator": {"attribute_name": "著者", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "Ohta, Hiroyuki", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "14179", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Nagashima, Atsushi", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "14180", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Hori, Masaru", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "14181", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Goto, Toshio", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "14182", "nameIdentifierScheme": "WEKO"}]}]}, "item_files": {"attribute_name": "ファイル情報", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2018-02-19"}], "displaytype": "detail", "download_preview_message": "", "file_order": 0, "filename": "JApplPhys_89_5083.pdf", "filesize": [{"value": "419.0 kB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "licensetype": "license_note", "mimetype": "application/pdf", "size": 419000.0, "url": {"label": "JApplPhys_89_5083.pdf", "objectType": "fulltext", "url": "https://nagoya.repo.nii.ac.jp/record/5494/files/JApplPhys_89_5083.pdf"}, "version_id": "6c28d01e-bc69-482d-8b51-6f4fe83db3d1"}]}, "item_language": {"attribute_name": "言語", "attribute_value_mlt": [{"subitem_language": "eng"}]}, "item_resource_type": {"attribute_name": "資源タイプ", "attribute_value_mlt": [{"resourcetype": "journal article", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "Effect of ions and radicals on formation of silicon nitride gate dielectric films using plasma chemical vapor deposition", "item_titles": {"attribute_name": "タイトル", "attribute_value_mlt": [{"subitem_title": "Effect of ions and radicals on formation of silicon nitride gate dielectric films using plasma chemical vapor deposition", "subitem_title_language": "en"}]}, "item_type_id": "10", "owner": "1", "path": ["322"], "permalink_uri": "http://hdl.handle.net/2237/7099", "pubdate": {"attribute_name": "PubDate", "attribute_value": "2006-10-30"}, "publish_date": "2006-10-30", "publish_status": "0", "recid": "5494", "relation": {}, "relation_version_is_last": true, "title": ["Effect of ions and radicals on formation of silicon nitride gate dielectric films using plasma chemical vapor deposition"], "weko_shared_id": -1}
  1. B200 工学部/工学研究科
  2. B200a 雑誌掲載論文
  3. 学術雑誌

Effect of ions and radicals on formation of silicon nitride gate dielectric films using plasma chemical vapor deposition

http://hdl.handle.net/2237/7099
http://hdl.handle.net/2237/7099
183a9e11-3d76-4789-9562-44f4043c2dc0
名前 / ファイル ライセンス アクション
JApplPhys_89_5083.pdf JApplPhys_89_5083.pdf (419.0 kB)
Item type 学術雑誌論文 / Journal Article(1)
公開日 2006-10-30
タイトル
タイトル Effect of ions and radicals on formation of silicon nitride gate dielectric films using plasma chemical vapor deposition
言語 en
著者 Ohta, Hiroyuki

× Ohta, Hiroyuki

WEKO 14179

en Ohta, Hiroyuki

Search repository
Nagashima, Atsushi

× Nagashima, Atsushi

WEKO 14180

en Nagashima, Atsushi

Search repository
Hori, Masaru

× Hori, Masaru

WEKO 14181

en Hori, Masaru

Search repository
Goto, Toshio

× Goto, Toshio

WEKO 14182

en Goto, Toshio

Search repository
アクセス権
アクセス権 open access
アクセス権URI http://purl.org/coar/access_right/c_abf2
権利
言語 en
権利情報 Copyright (2001) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
抄録
内容記述 We have clarified effects of ions and radicals on the film property of ultrathin silicon nitride (SiN_x) films of 5 nm in thickness formed on Si substrates at 300 ℃ in electron cyclotron resonance plasma-enhanced chemical vapor deposition (PECVD) employing ammonia and silane (NH_3/SiH_4), and nitrogen and silane (N_2/SiH_4) gases. In situ Fourier transform infrared reflection absorption spectroscopy and in situ x-ray photoelectron spectroscopy confirmed that in N_2/SiH_4 plasma, Si-N bonds in the film were increased by eliminating charged species, and thus, radicals promoted the formation of the SiN_x film of high Si-N bond density. On the other hand, Si-N bonds in the film were decreased by eliminating charged species, and eventually, ions played an important role in forming the film of high Si-N bond density in NH_3/SiH_4 plasma. The excellent hysteresis of 0.04 V was successfully achieved with the NH_3/SiH_4 plasma. Furthermore, the quadrupole mass spectroscopy suggests that {NH_4}^+ charged species make a significant contribution to the formation of ultrathin SiN_x films with high quality. These results provide insights into important species to be controlled in the PECVD for low temperature formation of the SiN_x gate dielectric films in ultralarge scale integrated circuits.
言語 en
内容記述タイプ Abstract
出版者
言語 en
出版者 American Institute of Physics
言語
言語 eng
資源タイプ
資源タイプresource http://purl.org/coar/resource_type/c_6501
タイプ journal article
出版タイプ
出版タイプ VoR
出版タイプResource http://purl.org/coar/version/c_970fb48d4fbd8a85
DOI
関連タイプ isVersionOf
識別子タイプ DOI
関連識別子 https://doi.org/10.1063/1.1337939
ISSN
収録物識別子タイプ PISSN
収録物識別子 0021-8979
書誌情報 en : Journal of Applied Physics

巻 89, 号 9, p. 5083-5087, 発行日 2001-05-01
フォーマット
application/pdf
著者版フラグ
値 publisher
URI
識別子 http://hdl.handle.net/2237/7099
識別子タイプ HDL
戻る
0
views
See details
Views

Versions

Ver.1 2021-03-01 13:09:54.256802
Show All versions

Share

Mendeley Twitter Facebook Print Addthis

Cite as

エクスポート

OAI-PMH
  • OAI-PMH JPCOAR
  • OAI-PMH DublinCore
  • OAI-PMH DDI
Other Formats
  • JSON
  • BIBTEX

Confirm


Powered by WEKO3


Powered by WEKO3