WEKO3
アイテム
Effect of ions and radicals on formation of silicon nitride gate dielectric films using plasma chemical vapor deposition
http://hdl.handle.net/2237/7099
http://hdl.handle.net/2237/7099183a9e11-3d76-4789-9562-44f4043c2dc0
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
JApplPhys_89_5083.pdf (419.0 kB)
|
|
| アイテムタイプ | 学術雑誌論文 / Journal Article(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2006-10-30 | |||||
| タイトル | ||||||
| タイトル | Effect of ions and radicals on formation of silicon nitride gate dielectric films using plasma chemical vapor deposition | |||||
| 言語 | en | |||||
| 著者 |
Ohta, Hiroyuki
× Ohta, Hiroyuki× Nagashima, Atsushi× Hori, Masaru× Goto, Toshio |
|||||
| アクセス権 | ||||||
| アクセス権 | open access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_abf2 | |||||
| 権利 | ||||||
| 権利情報 | Copyright (2001) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. | |||||
| 言語 | en | |||||
| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | We have clarified effects of ions and radicals on the film property of ultrathin silicon nitride (SiN_x) films of 5 nm in thickness formed on Si substrates at 300 ℃ in electron cyclotron resonance plasma-enhanced chemical vapor deposition (PECVD) employing ammonia and silane (NH_3/SiH_4), and nitrogen and silane (N_2/SiH_4) gases. In situ Fourier transform infrared reflection absorption spectroscopy and in situ x-ray photoelectron spectroscopy confirmed that in N_2/SiH_4 plasma, Si-N bonds in the film were increased by eliminating charged species, and thus, radicals promoted the formation of the SiN_x film of high Si-N bond density. On the other hand, Si-N bonds in the film were decreased by eliminating charged species, and eventually, ions played an important role in forming the film of high Si-N bond density in NH_3/SiH_4 plasma. The excellent hysteresis of 0.04 V was successfully achieved with the NH_3/SiH_4 plasma. Furthermore, the quadrupole mass spectroscopy suggests that {NH_4}^+ charged species make a significant contribution to the formation of ultrathin SiN_x films with high quality. These results provide insights into important species to be controlled in the PECVD for low temperature formation of the SiN_x gate dielectric films in ultralarge scale integrated circuits. | |||||
| 言語 | en | |||||
| 出版者 | ||||||
| 出版者 | American Institute of Physics | |||||
| 言語 | en | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプresource | http://purl.org/coar/resource_type/c_6501 | |||||
| タイプ | journal article | |||||
| 出版タイプ | ||||||
| 出版タイプ | VoR | |||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
| DOI | ||||||
| 関連タイプ | isVersionOf | |||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | https://doi.org/10.1063/1.1337939 | |||||
| ISSN | ||||||
| 収録物識別子タイプ | PISSN | |||||
| 収録物識別子 | 0021-8979 | |||||
| 書誌情報 |
en : Journal of Applied Physics 巻 89, 号 9, p. 5083-5087, 発行日 2001-05-01 |
|||||
| フォーマット | ||||||
| 値 | application/pdf | |||||
| 著者版フラグ | ||||||
| 値 | publisher | |||||
| URI | ||||||
| 識別子 | http://hdl.handle.net/2237/7099 | |||||
| 識別子タイプ | HDL | |||||
